.HIGHOUTPUT POWER
.HIGHCURRENT CAPABILITY
.ACSHORTCIRCUIT PROTECTION
.THERMALOVERLOADPROTECTION
TDA2007A
6 + 6W STEREO AMPLIFIER
DESCRIPTION
TheTDA2007Aisa classABdualAudiopoweramplifier assembledin single in line 9 pins package,
specially designed for stereo application in music
centersTVreceiversand portableradios.
STE REO TES T CIRCUIT
SIP9
ORDERING NUMBER : TDA2007A
May 1991
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TD A200 7A
PIN CONNECT I ON (top v iew)
SCHEMATIC DIAGRAM
THERMAL DATA
Symbol Parameter Value Unit
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TD A 2007A
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
Supply Voltage 28 V
V
S
OutputPeak Current (repetitivef ≥ 20Hz) 3A
I
O
OutputPeak Current (non repetitive t = 100µs) 3.5 A
I
O
P
T
stg,Tj
Power Dissipation at T
tot
Storageand JunctionTemperature –40 to 150 °C
=70°C 10 W
case
ELECTRICALCHARACTERISTICS(refertothestereoapplicationcircuit,T
=36dB,unlessotherwisespecified)
G
V
=25°C, VS= 18V,
amb
Symbol Parameter Test Condition Min. Typ. Max. Unit
Supply Voltage 826V
V
S
QuiescentOutput Voltage 8.5 V
V
O
Total Quiescent Drain Curent 50 90 mA
I
d
OutputPower
P
O
(each channel)
d Distortion
(each channel)
ooo
CT Cross Talk (
V
InputSaturation Voltage (rms) 300 mV
i
InputResistance f = 1KHz 70 200 KΩ
R
i
Low Frequency Roll Off (–3dB) RL=4Ω, C10 = C11 = 2200µF 40 Hz
f
L
Low Frequency Roll Off (–3dB) 80 KHz
f
H
VoltageGain (closed loop) f = 1KHz 35.5 36 36.5 dB
G
V
∆G
ClosedLoop Gain Matching 0.5 dB
V
Total Input Noise Voltage Rg=10kΩ (o) 1.5 µV
e
N
)R
SVR Supply Voltage Rejection
(each channel)
Thermal Shut-down Junction
T
j
f = 100Hz to 6KHz
d = 0.5%
V
=18V RL=4Ω
S
V
=22V RL=8W
S
f = 1KHz, V
P
= 100mW to 3W
O
f = 1KHz, V
P
= 100mW to 3W
O
=∞,Rg= 10KΩ
L
= 18V, RL=4Ω
S
= 22V, RL=8Ω
S
f = 1KHz
f = 10KHz
=10kΩ (oo) 2.5 8 µV
R
g
=10KΩ
R
g
f
= 100Hz, V
ripple
ripple
= 0.5V
5.5
5.5
50
40
6
6
0.1
0.05
60
50
55 dB
145 °C
Temperature
W
W
%
%
dB
dB
(°) Curve A. (°°) 22Hz to 22KHz.
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TD A200 7A
Figure 1 : Stereo Test Circuit (GV=36dB).
Figure 2 : P.C. Board and Component s layout o f the Circuit o f Fig.1 (1 : 1 scale).
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TD A 2007A
APPLI CATI O N SUGG ES TION
The recommendedvalues ofthecomponentsarethoseshownon applicationcircuitoffig.1.Differentvalues
can be used; thefollowing tablecan helpthe designer.
Component Recommended value Purpose LargerThan SmallerThan
R1, R3 1.3KΩ Close Loop Gain
R2 andR4 18Ω Decrease of Gain Increase of gain
R5 andR6 1Ω Frequency stability Danger of
C1 andC2 2.2µF Input DC Decoupling High Turn-on Delay High Turn-on Pop
C3 22µF Ripple Rejection Better SVR Increase
C6 andC7 220µF Feedback Input DC
C8 andC9 0.1µF Frequency Stability Danger of Oscillation
Setting (*)
Decoupling
Increase of Gain Decrease of Gain
Oscillation at High
Frequency with
InductiveLoad
Higher Low
Frequency
Cutoff. Increase of
Noise
Degradationof SVR
of theSwitch-on
Time
(*) The closed loop gain must be higher than 26 dB.
APPLI CATI O N INF O RMATIO N
Figure3:12 W Bridge Amplifier (d = 0.5%, GV=40dB).
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TD A200 7A
SIP9 PACKAGE MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
A 7.1 0.280
a1 2.7 3 0.106 0.118
B 23 0.90
B3 24.8 0.976
b1 0.5 0.020
b3 0.85 1.6 0.033 0.063
C 3.3 0.130
c1 0.43 0.017
c2 1.32 0.052
D 21.2 0.835
d1 14.5 0.571
e 2.54 0.100
e3 20.32 0.800
L 3.1 0.122
L1 3 0.118
L2 17.6 0.693
L3 0.25 0.010
L4 17.4 17.85 0.685 0,702
M 3.2 0.126
N 1 0.039
P 0.15 0.006
L4
L2
La1
D
L3
L1
N
P
19
e3
B3
M
d1
b1
b3
B
ec1
c2
A
SIP9
C
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TD A 2007A
Informationfurnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for
the consequences of use of such information nor for any infringement of patents or otherrightsof thirdparties which may result fromits
use. No licen se is grant ed by implication or otherwise under any patent or paten t rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subjec t to change wit hout notice. This publicationsupersedes and replaces all infor m ation previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life supportdevices or
systems withoutexpress written approval of SGS-THOMSON Microelectronics.
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