SGS-THOMSON Microelectronics TDA 2005 Service Manual

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20W BRIDGE AMPLIFIER FORCAR RADIO

High output power : PO= 10 + 10 W@RL=2Ω,
d = 10% ; P

High reliabilityofthe chipandpackagewith addi­tional complete safety during operation thanks to
protectionagainst:

.

OUTPUT DC AND AC SHORT CIRCUIT TO
GROUND

.

OVERRATINGCHIP TEMPERATURE

.

LOADDUMP VOLTAGESURGE

.

FORTUITOUS OPEN GROUND

.

VERYINDUCTIVE LOADS

Flexibilityin use: bridge or stereo boosterampli­fierswithor withoutboostrapand withprogramma­ble gain and bandwidth.

Space and cost saving : very low number of
external components, very simple mounting sys­tem with no electrical isolation between the pack­age and the heatsink(one screwonly).

In addition, the circuitoffersloudspeakerprotec-
tion during short circuit for one wire to ground.

= 20W@RL=4Ω,d=1%.

O

TDA2005

MULTIWATT11

ORDERING NUMBERS : TDA2005M (Bridge Appl.)

TDA2005S (Stereo Appl.)

DESCRIPTION

TheTDA2005is classB dual audiopoweramplifier
in MULTIWATT packagespecificallydesignedfor
car radio application : power booster amplifiers
are easilydesignedusingthis device thatprovides
a high currentcapability (upto 3.5A) and that can
drive very low impedance loads (down to 1.6Ω in
stereo applications) obtaining an output power of
more than 20 W (bridge configuration).

ABSOLUTE MAXIMUMRATINGS

Symbol Parameter Value Unit

V

s

V

s

V

s

(*) Output Peak Current (non repetitive t = 0.1 ms) 4.5 A

I

o

(*) Output Peak Current (repetitive f ≥ 10 Hz) 3.5 A

I

o

P

tot

T

stg,Tj

(*) The max. output current is internally limited.

PIN CONNECTION

Operating Supply Voltage 18 V
DC Supply Voltage 28 V
Peak Supply Voltage (for 50 ms) 40 V

Power Dissipation atT
Storage and JunctionTemperature – 40 to 150 °C

=60°C30W

case

March 1995

1/21

TDA2005

SCHEMATIC DIAGRAM

THERMALDATA

Symbol Parameter Value Unit

Thermal Resistance Junction-case Max. 3 °C/W

2/21

R

th j-case

BRIDGE AMPLIFIER APPLICATION(TDA2005M)

Figure1 : Test and ApplicationCircuit (Bridgeamplifier)

TDA2005

Figure2 : P.C.Board and ComponentsLayout of Figure1 (1:1 scale)

3/21

TDA2005

ELECTRICAL CHARACTERISTICS (referto the Bridge applicationcircuit, T

R

th (heatsink

)=4oC/W, unless otherwise specified)

=25oC, GV=50dB,

amb

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

P

Supply Voltage 8 18 V

s

Output Offset Voltage (1)

os

(between pin 8 and pin 10)
Total Quiescent Drain Current Vs= 14.4V RL=4Ω

I

d

Output Power d= 10% f = 1 Hz

o

Vs= 14.4V

= 13.2V

V

s

= 13.2V RL= 3.2Ω

V

s

= 14.4V RL=4Ω

V

s

= 13.2V RL= 3.2 Ω

V

s

R

L

= 3.2Ω

18
20
17

150
150mVmV

7570150

160mAmA

20
22
19

d Distortion f = 1kHz

= 14.4V RL=4Ω

V

s

Input Sensitivity f = 1kHz

V

i

R

f
G
e

Input Resistance f = 1kHz 70 kΩ

i

Low Frequency Roll Off (– 3dB) RL= 3.2Ω 40 Hz

f

L

High Frequency Roll Off (– 3dB) RL= 3.2Ω 20 kHz

H

Closed Loop Voltage Gain f = 1kHz 50 dB

v

Total Input Noise Voltage Rg= 10kΩ (2) 3 10 µV

N

SVR Supply Voltage Rejection R

η Efficiency V

Thermal Shut-down Junction

T

j

Temperature

V

OSH

Notes : 1. For TDA2005M only

Output Voltage with one Side of
the Speaker shorted to ground

2. BandwithFilter : 22Hz to22kHz.

= 50mW to 15W

P

o

= 13.2V RL= 3.2Ω

V

s

= 50mW to 13W

P

o

=2W RL=4Ω

P

o

=2W RL= 3.2Ω

P

o

= 10kΩ,C4=10µF

g

= 100Hz, V

f

ripple

= 14.4V, f = 1 kHz

s

= 20W RL=4Ω

P

o

= 22W RL= 3.2Ω

P

o

= 13.2V, f = 1 kHz

V

s

= 19W RL= 3.2Ω

P

o

ripple

Vs= 14.4V, RL=4Ω
f = 1kHz, P

tot

= 13W

= 0.5V

45 55 dB

60
60

58

145 °C

Vs= 14.4V RL=4Ω

= 13.2V RL= 3.2Ω 2V

V

s

1
1

9
8

W

%
%

mV
mV

%
%

%

4/21

TDA2005

Figure3 : OutputOffset Voltage versus

Supply Voltage

Figure5 : Distortion versus Output Power

(bridge amplifier)

Figure 4 : Distortionversus OutputPower

(bridgeamplifier)

BRIDGEAMPLIFIER DESIGN

The followingconsideraionscan be useful when designing a bridge amplifier.

Parameter Single Ended Bridge

V

o max

I

o max

P

o max

Where : V

Peak Output Voltage (before clipping)

Peak Output Current (before clippling)

RMS OutputPower (before clipping)

= output transistors saturation voltage

CE sat

= allowable supply voltage

V

S

R

= load impedance

L

1

(Vs–2V

2

V

1

S

2

(VS− 2V

1

4

− 2V
R

L

2R

CE sat

CE sat

CE sat
L

)V

2

)

–2V

s

V

− 2V

S

(V

−2V

S

R

2R

CE sat

CE sat

L

CE sat
L

2

)

5/21

TDA2005

Voltageand current swings are twice for a bridge
amplifierincomparisonwithsingleendedamplifier.
In order words, with the same R

the bridge con-

L

figurationcan deliver an output power that is four
timesthe output powerof a singleendedamplifier,
while,with the samemax output current the bridge
configuration can deliver an output power that is
twicethe output power of a singleended amplifier.
Core must be taken when selecting V

and RLin

S

order to avoid an output peak current above the
absolutemaximum rating.

From the expression for I
V

= 14.4V and V

S

= 2V,the minimum load

CE sat

, assuming

O max

that can be driven by TDA2005 in bridge configu­rationis :

R

L min

V

S

=

I

Omax

CEsat

14.4 −

=

3.5

4

=2.97Ω

− 2V

Thevoltagegainofthebridgeconfigurationis given
by(see Figure34) :

V

0

=

V

=1+

1

G

V





R

R

2

R

1

2⋅R4

+R

R

3

+



R

4



4



STEREOAMPLIFIER APPLICATION (TDA2005S)

Forsufficientlyhighgains(40 to 50dB)itis possible
to putR

andR3=2R1, simplifing the formula

2=R4

in :

R

1

=4

G

V

R

2

Gv(dB) R1(Ω)R2=R4(Ω)R3(Ω)

40
50

1000
1000

39
12

2000
2000

Figure6 : Bridge Configuration

Figure7 : TypicalApplicationCircuit

6/21