Datasheet TDA1910 Datasheet (SGS Thomson Microelectronics)

10W AUDIO AMPLIFIERWITHMUTING

DESCRIPTION

The TDA 1910 is a monolithicintegratedcircuit in
MULTIWATT package, intended for use in Hi-Fi
audiopowerapplications,as high quality TV sets.

The TDA 1910 meets the DIN 45500 (d = 0.5%)
guaranteed output power of 10W when used at
24V/4W.At 24V/8Wthe output power is 7W min.
Features:

– muting facility
– protection against chip overtemperature
– very low noise
– high supplyvoltage rejection
– low ”switch-on”noise.
The TDA 1910 is assembled in MULTIWATT

packagethat offers:
– easy assembly
– simple heatsink

Multiwatt 11

ORDERING NUMBERS

TDA1910 (Multiwatt11Vertical)

TDA1910HS (Multiwatt11 Horizontal)

– space and cost saving
– high reliability

TDA1910

:

ABSOLUTEMAXIMUM RATINGS

Symbol Parameter Value Unit

V

I

o

I

o

V
V

V

11

P

tot

T

stg,Tj

Supply voltage 30 V

s

Output peak current (non repetitive) 3.5 A
Output peak current (repetitive) 3.0 A
Input voltage 0 to + V

i

Differential input voltage

i

Muting thresold voltage V
Power dissipation at T
Storage and junction temperature -40 to 150

=90°C20W

case

7V

±

s

s

TESTCIRCUIT

V

V

C

°

May 1997

(*)Seefig. 13.

1/14

TDA1910

PIN CONNECTION

(Topview)

SCHEMATICDIAGRAM

2/14

TEST CIRCUIT

(*) See fig. 13.

TDA1910

MUTINGCIRCUIT

3/14

TDA1910

THERMALDATA

Symbol Parameter Value Unit

R

th j-case

Thermal resistance junction-case max 3

C/W

°

ELECTRICALCHARACTERISTICS(Refer tothetestcircuit, T

=25°C,Rth(heatsink)=4°C/W,unless

amb

otherwisespecified)

Symbol Parameter Test condition Min. Typ. Max. Unit

V

V
V

CE sat

P

Supply voltage 8 30 V

s

Quiescent output voltage Vs= 18V

o

I

Quiescent drain current Vs= 18V

d

V

V

= 24V

s

= 24V

s

8.3

11.5

9.2

12.41013.4
19

21

Output stage saturation voltage IC=2A 1

I

= 3A 1.6

C

Output power d = 0.5%

o

V

s

V

s

V

s

d = 10%
V

s

V

s

V

s

Harmonic distortion f = 40 to 15,000 Hz

d

Vs= 18V RL=4

V

s

V

s

= 18V
= 24V
= 24V

= 18V
= 24V
= 24V

= 24V RL=4

= 24V RL=8

f = 40 to 15,000Hz

=4

R

Ω

L

=4

R

Ω

L

=8Ω

R

L

f = 1 KHz

=4

R

Ω

L

=4

R

Ω

L

=8

R

Ω

L

Ω

= 50 mW to 6.5W

P

o

Ω

= 50 mW to 10W

P

o

Ω

=50mWto 7W

P

o

6.5
10

7

8.5
15

9

7

12

7.5

9.5
17
10

0.2

0.2

0.2

32
35

0.5

0.5

0.5

V

mA

V

W

%

d Intermodulation distortion V

V

Input sensitivity

i

V

Input saturation voltage (rms) Vs= 18V

i

R

Input resistance (pin 5) f = 1 KHz 60 100 K

i

I

Drain current Vs= 24V f = 1 KHz

d

4/14

= 24V RL=4ΩPo= 10W

s

f

= 250 Hz f2 = 8 KHz

1

(DIN 45500)

F = 1 KHz,
V

= 18V

s

v

= 24V

s

V

= 24V

s

V

= 24V

s

R
RL = 8Ω P

R

L

R

L

R

L

=4Ω Po= 12W

L

=4

Ω

=4Ω
=8Ω

P
P
P

o

=7W

o

=12 W

o

= 7.5W

o

= 7.5W

1.8

2.4

0.2 %

170
220

mV

245

820

mA

475

V

Ω

TDA1910

ELECTRICALCHARACTERISTICS(continued)

Symbol Parameter Test condition Min. Typ. Max. Unit

h Efficiency V

BW Small signal bandwidth V
BW Power bandwidth V

G
G

e

Voltagegain (open loop) f = 1 KHz 75 dB

v

Voltagegain (closed loop) Vs= 24V

v

Totalinput noise Rg=50

N

S/N Signal to noiseratio

SVR Supply voltage rejection V

= 24V f = 1 KHz

s

R

=4

Ω

L

=8

R

Ω

L

= 24V RL=4ΩPo= 1W 10 to 120,000 Hz

s

P

= 24V

s

= 12W

o

R
d≤5%

RL=4

f = 1 KHz

Po = 1W

L

=4

Po= 12W

Po= 7.5W

Ω

Ω

29.5 30 30.5 dB

Ω

=1KΩ(°)

R

g

= 10K

R
R

R
R

V
P
R

= 24V

s

= 12W

o

=4

L

Ω

R
R

R
R

= 24V RL = 4

s

= 100 Hz Rg = 10 K

f

ripple

Ω

g

=50Ω

g

=1KΩ(°°)

g

= 10K

Ω

g

= 10KΩ

g

=0 (°)97

g

= 10K

Ω

g

=0 (°°)93

g

Ω

50 60 dB

Ω

62
65

40 to 15,000 Hz

1.2

1.3

1.5

2.0

2.0

2.2

3.0

3.2

4.0

5.0

5.2

6.0

103
105

100
100

%

µ

µ

dB

dB

V

V

T

Thermal sjut-down case (*)

sd

temperature

MUTINGFUNCTION (Refer to Muting circuit)

V

V

R

R

A

Note :

(°) Weightingfilter = curve A.
(°

°) Filter with noise bandwidth:22 Hz to22 KHz.

(*) See fig. 29 and fig. 30.

Muting-offthreshold voltage

T

(pin 11)

Muting-on threshold voltage

T

(pin 11)

Input resistance (pin 1) Muting off 80 200 K

1

Input resistance (pin 11) 150 K

11

Muting attenuation Rg+R1=10KΩ 50 60 dB

T

P

= 8W 110 125 °C

tot

1.9 4.7 V

0 1.3
6V

s

Muting on 10 30 Ω

V

Ω

Ω

5/14

TDA1910

Figure 1. Quiescent output
voltage vs.supply voltage

Figure 4. Output power vs.
supplyvoltage

Figure 2. Quiescent drain
currentvs. supply voltage

Figure 5. Output power vs.
supply voltage

Figure 3. Open loop fre­quencyresponse

Fi gure 6. Di storti on vs.
output power

Fi gure 7. Di storti on vs.
output power

6/14

Figure 8. Output power vs.
frequency

Figure 9. Output power vs.
frequency

TDA1910

Figure 10. Output power vs.
input voltage

Figure 13. Values of capaci­tor C
and gain (G

vs. bandwidth (BW)

X

)

V

Figure 11. Output power vs.
inputvoltage

Figure 14. Supply voltage
rejectionvs. voltagegain

Figure 12. Total input noise
vs. source resistance

Figure 15. Supply voltage
rejection vs. source
resistance

Figure 16. Power dissipa­tionand efficiencyvs.output
power

Figure 17. Power dissipa­tionandefficiencyvs. output
power

Figure 18. Max power
dissipation v s. supply
voltage

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TDA1910

APPLICATIONINFORMATION

Figure19. Applicationcircuitwithout muting

Figure 20. PC boardand component lay-outof
the circuitof fig. 19 (1:1 scale)

Figure21. Applicationcircuitwith muting

8/14

Performance(circuitsof fig. 19 and 21)

=12W(40 to 15000Hz, d ≤ 0.5%)

P

o

= 24V

V

s

I

= 0.82A

d

G

=30dB

v

APPLICATIONINFORMATION(continued)

TDA1910

Figure22. TwopositionDC tonecontrol(10 dBboost 50Hz and
20 KHz) using change of pin 1 resistance(muting function)

Figure24. 10dB 50 Hz boos tonecontrolusing change of pin1
resistance(muting function)

Figure 23. Frequenc y re­sponse of the circuit of fig.22

Figure 25. Frequenc y re­sponse of the circuit of fig.24

Figure26. Squelchfunction in TV applications Figure 27. Delayed muting circuit

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TDA1910

MUTINGFUNCTION

The output signal can be inhibitedapplying a DCvoltage V

Figure28

to pin 11,as shownin fig.28

T

The input resistanceat pin 1 dependson thethresholdvoltage V

= 200 K

R

1

R1 = 10 Ω

@ 1.9V≤V

Ω

@

0V ≤ V

6V ≤ VT≤ V

4.7V muting-off

≤

T

≤ 1.3V

T

s

muting-on

at pin 11and is typically.

T

Referringtothefollowinginputstage, thepossibleattenuationof theinputsignalandthereforeoftheoutput
signalcan be found using the following expression.

R

⁄⁄

R

⁄⁄

5

1

R

1

Considering Rg = 10 KΩ the attenuation in the
muting-on condition is typicallyA

= 60 dB. In the

T

muting-off condition, the attenuation is very low,
typically 1.2dB.

Avery low current is necessaryto drivethe thresh­old voltageV

becausethe input resistance at pin

T

11is greaterthan150 KΩ. Themutingfunction can
beusedinmanycases,whenatemporaryinhibition

V

R

=

≅

100

+

g

R

5

K

Ω

=

A

T

V

where R5

i

5

- during commutationsat the input stages.

- during the receivertuning.
The variable impedance capabilityat pin 1 can be

useful in many applications and we haveshown 2
examplesin fig.22 and 24,where it hasbeen used
tochangethe feedbacknetwork,obtaining2 differ­ent frequencyresponses.

of the output signal is requested,for example:

- in switch-on condition, to avoid preamplifier
power-on transients(see fig. 27)

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TDA1910

APPLICATIONSUGGESTION

The recommended values of the components are those shown on applicationcircuit of fig. 21. Different
valuescan be used.
The followingtablecan helpthe designer.

Component

R

g+R1

R

2

R

3

R

4

P

1

C

1

C

2

C

3

C

4

C

5

Raccom.

value

10K

Ω

Purpose

Input signal imped.
for muting operation

3.3KΩ Close loop gain
setting.

100

Close loop gain

Ω

setting.

1

20K

Frequency stability Danger of oscillation

Ω

Volume

Ω

potentiometer.

1 µF

Input DC decoupling. Higher low frequency

1µF

0.22µF

2.2µF Inverting input DC
decoupling.

0.1µF Supply voltage
bypass.

Larger than

recommended value

Increase of the atte­nuation in muting-on
condition. Decrease

Smaller than

recommended value

Decrease of the
attenuation in muting
on condition.

Allowed range
Min. Max.

of the inputsensitivity.
Increase of gain. Decrease of gain.

Increase quiescent

9R

3

current.

Decrease of gain. Increase of gain. R2/9

at high frequencies
with inductive loads.

Increase of the
switch-on noise.

Decrease of the input
impedance and of the

10K

100K

Ω

input level.

cutoff.

Increase of the
switch-on noise.

Higher low frequency
cutoff.

0.1µF

Danger of oscillations.

Ω

C

6

10µF Ripple rejection. Increase of SVR.

Increase of the

Degradation of
SVR

2.2µF 100µF

switch-on time

C

7

47µF Bootstrap. Increase of the distor-

10µF 100µF

tion at low frequency.

C

8

C

9

0.22µF Frequency stability. Danger of oscillation.

2200µF

(R

=4Ω)

L

Output DC
decoupling.

Higher low frequency
cutoff.

1000µF

=8Ω)

(R

L

11/14

TDA1910

THERMALSHUT-DOWN

The presence ofa thermallimiting circuit offersthe
followingadvantages:

1) An overload on the output (even if it is perma­nent), or an above limit ambient temperature
can be easily supportedsince the T

cannotbe

j

higher than 150°C.

2) The heatskink can have a smaller factor of
safety compared with that of a conventional

Figure 29. Output power and
drai n curre nt vs. case
temperature

Figure 30. Output power and
drai n curre nt vs. case
temperature

circuit.Thereis no possibilityof devicedamage
due to high junction temperature.
If for any reason, the junction temperature in­creases up to 150°C, the thermal shut-down
simply reduces the power dissipation and the
currentconsumption.

The maximum allowable power dissipation de­pendsupon thesizeof theexternalheatsink(i.e.its
thermal resistance); fig. 31 shows this dissipable
power as a function of ambient temperature for
differentthermalresistance.

Figure31.Maximumallowable
powerdissipation vs. ambient
temperature

MOUNTINGINSTRUCTIONS

The power dissipated in the circuit must be re­movedby addingan externalheatsink.
Thanks to the Multiwatt package attaching the
heatsinkis verysimple, ascrewor a compression

12/14

spring(clip) beingsufficient.Between theheatsink
andthepackageitisbettertoinsertalayerofsilicon
grease,to optimizethe thermalcontact;no electri­cal isolationis neededbetweenthe two surfaces.

MULTIWATT 11VERTICAL PACKAGE MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 5 0.197
B 2.65 0.104
C 1.6 0.063
D 1 0.039
E 0.49 0.55 0.019 0.022
F 0.88 0.95 0.035 0.037

G 1.57 1.7 1.83 0.062 0.067 0.072
G1 16.87 17 17.13 0.664 0.669 0.674
H1 19.6 0.772
H2 20.2 0.795

L 21.5 22.3 0.846 0.878

L1 21.4 22.2 0.843 0.874
L2 17.4 18.1 0.685 0.713
L3 17.25 17.5 17.75 0.679 0.689 0.699
L4 10.3 10.7 10.9 0.406 0.421 0.429
L7 2.65 2.9 0.104 0.114

M 4.1 4.3 4.5 0.161 0.169 0.177

M1 4.88 5.08 5.3 0.192 0.200 0.209

S 1.9 2.6 0.075 0.102
S1 1.9 2.6 0.075 0.102

Dia1 3.65 3.85 0.144 0.152

mm inch

TDA1910

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TDA1910

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor forany infringementof patents orother rights of third partieswhich may result from its use. No
license is granted by implicationor otherwiseunder any patentor patentrights of SGS-THOMSON Microelectronics. Specificationmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSONMicroelectronics products arenot authorizedfor use as criticalcomponents in lifesupport devicesor systems withoutexpress
written approval of SGS-THOMSONMicroelectronics.

 1997 SGS-THOMSON Microelectronics – Printedin Italy– All Rights Reserved

SGS-THOMSON Microelectronics GROUP OF COMPANIES

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