Datasheet TDA1905 Datasheet (SGS Thomson Microelectronics)

TDA1905

5W AUDIO AMPLIFIER WITH MUTING

DESCRIPTION

The TDA1905 is a monolithicintegrated circuit in
POWERDIP package, intended for use as low
frequencypower amplifierin a wide rangeof appli­cations in radio and TV sets:

– muting facility
– protectionagainst chip over temperature
– very low noise
– high supply voltage rejection
– low ”switch-on” noise
– voltagerange 4V to 30V
TheTDA 1905is assembled in a new plasticpack-

age,thePOWERDIP,thatoffersthesameassembly
ease,spaceandcostsavingof a normaldualin-line
packagebutwithapowerdissipationofupto6Wand

ORDERING NUMBER : TDA1905

a thermalresistance of 15°C/W (junctionto pins).

ABSOLUTE MAXIMUMRATINGS

Symbol Parameter Value Unit

V

s

I

o

I

o

V
V

V

11

P

tot

T

stg,Tj

Supply voltage 30 V
Output peak current (non repetitive) 3 A
Output peak current (repetitive) 2.5 A
Input voltage 0 to + V

i

Differential input voltage

i

Muting thresold voltage V
Power dissipation at T

Storage and junction temperature -40 to 150

=80°C

amb

=60°C6W

T

case

APPLICATION CIRCUIT

Powerdip

(8 + 8)

s

± 7

s

1W

V
V
V

°C

March 1993

1/14

TDA1905

PIN CONNECTION (top view)

SCHEMATIC DIAGRAM

THERMALDATA

Symbol Parameter Value Unit

2/14

R

th-j-case

R

th-j-amb

Thermal resistance junction-pins max 15
Thermal resistance junction-ambient max 70

°C/W
°C/W

TEST CIRCUITS:

WITHOUTMUTING

TDA1905

WITH MUTING FUNCTION

3/14

TDA1905

ELECTRICAL CHARACTERISTICS (Referto the test circuit, T

=25°C, Rth(heatsink)= 20 °C/W,

amb

unless otherwiswspecified)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Supply voltage 4 30 V

s

Quiescent output voltage Vs=4V

o

I

Quiescent drain current Vs=4V

d

Output stage saturation

V

= 14V

s

V

= 30V

s

V

= 14V

s

= 30V

V

s

IC=1A

1.6

6.7

14.4

2.1

7.2

15.5
15

17
21 35

0.5

voltage

Output power d = 10%

o

d Harmonic distortion

=2A

I

C

f = 1KHz

V
V
V
V

=9V

s

= 14V

s

= 18V

s

= 24V

s

R
R
R
R

f = 1KHz
V

=9V RL=4Ω

s

P

= 50 mW to 1.5W

V
V
V

s

s

s

o

= 14V RL=4Ω

P

=50mWto3W

o

= 18V RL=8Ω

=50mWto3W

P

o

= 24V RL=16Ω

P

=50mWto3W

o

=4Ω(*)

L

=4Ω

L

=8Ω

L

=16Ω

L

2.2
5
5

4.5

1

2.5

5.5

5.5

5.3

0.1

0.1

0.1

0.1

2.5

7.8

16.8

V

V
V

CE sat

P

V

mA

V

W

%

Input sensitivity f = 1KHz

V

i

V

Input saturation

i

voltage (rms)

R

Input resistance (pin 8) f = 1KHz 60 100

i

I

Drain current f = 1KHz

d

V

=9V

s

V

= 14V

s

V

= 18V

s

V

= 24V

s

Vs=9V
V

= 14V

s

V

= 18V

s

V

= 24V

s

V

=9V

s

V

= 14V

s

V

= 18V

s

V

= 24V

s

f = 1KHz
V

=9V

Efficiency

η

(*) With an external resistor of 100Ω between pin 3 and +Vs.

V
V
V

s

= 14V

s

= 18V

s

= 24V

s

R
R
R
R

R
R
R
R

R
R
R
R

L
L
L
L

L
L
L
L

L
L
L
L

=4Ω
=4Ω
=8Ω
=16Ω

=4Ω
=4Ω
=8Ω
=16Ω

=4Ω
=4Ω
=8Ω
=16Ω

P
P
P
P

P
P
P
P

P
P
P
P

o
o
o
o

o
o
o
o

o
o
o
o

= 2.5W
= 5.5W
= 5.5W
= 5.3W

= 2.5W
= 5.5W
= 5.5W
= 5.3W

= 2.5W
= 5.5W
= 5.5W
= 5.3W

0.8

1.3

1.8

2.4

37
49
73

100

380
550
410
295

73
71
74
75

mV

V

KΩ

mA

%

4/14

TDA1905

ELECTRICALCHARACTERISTICS (continued)

Symbol Parameter Testconditions Min. Typ. Max. Unit

BW Small signal

bandwidth (-3dB)

G

G

e

Voltagegain (open loop) Vs= 14V

v

Voltagegain (closed loop) Vs= 14V

v

Totalinput noise

N

S/N Signal to noiseratio

SVR Supply voltage rejection V

T

Thermal shut-down

sd

case temperatura

(*)

= 14V

V

s

=4Ω P

R

L

f = 1KHz

R

=4Ω

f = 1KHz

V

= 14V

s

= 5.5W

P

o

R

=4Ω

L

= 18V RL=8Ω

s

f

= 100 Hz Rg = 10KΩ

ripple

V

= 0.5V

ripple

L

=1W

P

o

R

=50Ω

g

R

=1KΩ

g

R

= 10KΩ

g

=50Ω

R

g

R

=1KΩ

g

R

= 10KΩ

g

R

= 10KΩ

g

R

=0 (°)

g

= 10KΩ

R

g

R

=0 (°°)

g

rms

P

tot

= 1W 40 to 40,000 Hz

o

75 dB

39.5 40 40.5 dB

1.2

(°)

1.3

1.5 4.0

2.0

(°°)

2.0

2.2 6.0
90

92 dB

87
87

40 50 dB

= 2.5W 115

µV

µV

dB

°C

MUTING FUNCTION

VT

VT

R

R
A

Note:

(°) Weighting filter= curve A.
(° °) Filterwith noise bandwidth: 22 Hz to 22 KHz.
(*) See fig. 30 and fig. 31

Muting-off threshold

OFF

voltage (pin 4)
Muting-on threshold

ON

voltage (pin 4)

Input-resistance (pin 5) Muting off 80 200

5

Input resistance (pin 4) 150

4

Muting attenuation

T

R

g+R1

1.9 4.7 V

0 1.3 V

6.2 V

Muting on 10 30

= 10KΩ

50 60 dB

s

KΩ

Ω

KΩ

5/14

TDA1905

Figure 1. Quiescent output
voltagevs. supply voltage

Fig ure 4. Dis tort ion vs.
output power (R

=16Ω)

L

Figure 2. Quiescent drain
current vs. supply voltage

Figur e 5 . Dis tortion v s.
output power (RL=8Ω)

Figure 3. Output power vs.
supply voltage

Figur e 6 . D isto rtion vs .
outputpower (RL=4Ω)

Fig ure 7. Dis tort ion vs.
frequency (R

6/14

=16Ω)

L

Figur e 8 . Dis tortion v s.
frequency(RL=8Ω)

Figur e 9 . D isto rtion vs .
frequency(RL=4Ω)

TDA1905

Figure 10. Open loop fre­quencyresponse

Figure13. Supply voltagere­jection vs. voltage gain (ref.
to the Muting circuit)

Figure 11. Output power vs.
inputvoltage

Figure14.Supply voltagere­ectionvs. source resistance

Figure 12. Value of capaci­tor Cx vs. bandwidth (BW)
and gain (Gv)

Figure 15. Max power dissi­pation vs. supply voltage
(sine wave operation)

Figure 16. Power dissipa­tionand efficiencyvs. output
power

Figure 17. Power dissipa­tionand efficiencyvs. output
power

Figure 18. Power dissipa­tionand efficiencyvs. output
power

7/14

TDA1905

APPLICATIONINFORMATION

Figure 19. Applicationcircuit without muting

Figure 20. PC board and components lay-out
of the circuit of fig. 19 (1 : 1scale)

Figure21. Applicationcircuit withmuting

Figure 22. Delayed muting circuit

8/14

APPLICATIONINFORMATION (continued)

TDA1905

Figure23. Low-cost applicationcircuit without bootstrap.

Figure 25. Two position DC tonecontrol using change of
pin 5 resistance(muting function)

Figure 24. Output power
vs. supply voltage (circuit
of fig. 23)

Figure 26. Frequency re­sponseofthe circuitoffig.25

Figure 27. Bass Bomb tone controlusingchange of pin 5
resistance(muting function)

Figure 28. Frequency re­sponseofthecircuitoffig. 27

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TDA1905

MUTING FUNCTION

The outputsignal can be inhibitedapplying a DC voltage V

to pin 4, as shownin fig. 29

T

Figure29

The input resistanceat pin 5 depends on the thresholdvoltageV

= 200 KΩ @ 1.9V ≤ VT≤ 4.7V muting-off

R

5

R5 = 10 Ω @

0V ≤ VT ≤ 1.3V

6V ≤ VT ≤ V

s

at pin4 and is typically :

T

muting-on

Referringto the followinginputstage,thepossibleattenuationof the inputsignalandthereforeof the output
signal can be found using the following expression:

•

R

R

8

5

R

5

)

)

5

+(

R

g

V

i

=

A

T

=

V

8

R8+5

R

8

(

R8+R

•

where R8 ≅ 100 K Ω

Considering R
muting-on condition is typicallyA

=10KΩ the attenuationin the

g

= 60 dB. In the

T

muting-off condition, the attenuation is very low,
typically1.2 dB.
A very low current is necessarytodrive the thresh­old voltage V

because the input resistance at pin

T

4 is greaterthan 150 KΩ. Themutingfunction can
beusedinmanycases ,whena temporaryinhibit ion

– duringswitching at the input stages.
– duringthe receiver tuning.

The variableimpedance capabilityat pin 5 canbe
usefulin manyapplications and two examples are
shownin fig. 25 and27, whereit hasbeenusedto
change thefeedbacknetwork, obtaining2different
frequencyresponses.

of the output signal is requested, for example:
– in switch-on condition, to avoid preamplifier

power-ontransients(seefig. 22)

10/14

TDA1905

APPLICATIONSUGGESTION

The recommendedvalues of the external componentsarethoseshownonthe applicationcircuitof fig. 21.
When the supply voltageV
in order to obtain the maximumoutput power.
Differentvalues can be used. The followingtable can help the designer.

is less than 10V,a100Ω resistormustbe connected betweenpin 2 and pin 3

s

Component

R

g+R1

R

2

R

3

R

4

R

5

P

1

C

1

C

2

C

3

Raccom.

value

Purpose

10KΩ Inputsignal imped.

for muting operation

Larger than

recommended value

Increase of the
attenuation in muting-on
condition. Decrease of
the input sensitivity.

10KΩ

Increase of gain. Decrease of gain.

Feedback resistors

100Ω

Decrease of gain. Increase ofgain.

1KΩ Frequency stability Danger of oscillation at

high frequencies with
inductive loads.

100Ω Increase of theoutput

swingwith low supply
voltage.

20KΩ Volumepotentiometer Increase of the

switch-on noise.

0.22µF

InputDC
decoupling.

Higher cost
lower noise.

Smaller than

recommended value

Decrease of the attenu­ation inmuting on
condition.

Increase quiescent
current.

Decrease of the input
impedance and of the
input level.

Higher low
frequency cutoff.
Higher noise.

Allowed range

Min. Max.

9R

3

1KΩ

47 330

10KΩ 100KΩ

C

4

C

5

C

6

2.2µF Invertinginput DC
decoupling.

0.1µF

Supplyvoltage
bypass.

10µF

Ripple rejection Increase of SVR

Increase of the switch­on noise.

Higher low frequency
cutoff.

Danger of
oscillations.

Degradation of SVR

0.1µF

2.2µF 100µF
increase of the
switch-on time

C

7

47µF Bootstrap. Increase ofthe

10µF 100µF
distortion at low
frequency.

C

8

C

9

0.22µF

1000µF

Frequency stability. Danger of oscillation.

Output DC decoupling. Higher low frequency

cutoff.

11/14

TDA1905

THERMALSHUT-DOWN

The presence of a thermal limiting circuit offers the followingadvantages:

1) Anoverloadon theoutput (even if itis permanent),oran abovelimitambienttemperature canbeeasily
tolerated since the Tj cannotbe higher than 150 °C.

2) The heatsink can have a smallerfactor of safety compared with that of a conventionalcircuit. There is
no possibility of device damage due to high junction temperature.
Ifforanyreason,thejunctiontemperatureincreasesupto 150°C,thethermalshut-downsimplyreduces
the power dissipation and the current consumption.

The maximumallowable powerdissipationdependsupon the size of the externalheatsink (i.e. its thermal
resistance);fig. 32shows this dissipable power as a functionof ambient temperaturefor differentthermal
resistance.

Figure 30. Output power
and drain current vs. case
temperature

Figure 31. Output power
and drain current vs. case
temperature

MOUNTINGINSTRUCTION : See TDA1904

Figure 32. Maximum allo­wable power dissipation
vs. ambient temperature

12/14

POWERDIPPACKAGE MECHANICAL DATA

TDA1905

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

a1 0.51 0.020

B 0.85 1.40 0.033 0.055

b 0.50 0.020

b1 0.38 0.50 0.015 0.020

D 20.0 0.787
E 8.80 0.346

e 2.54 0.100

e3 17.78 0.700

F 7.10 0.280

I 5.10 0.201
L 3.30 0.130
Z 1.27 0.050

mm inch

13/14

TDA1905

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or otherrights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rightsof SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are notauthorized foruse ascritical components inlife supportdevices or systems without express
written approval of SGS-THOMSON Microelectronics.

 1994 SGS-THOMSONMicroelectronics - All RightsReserved

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