SGS Thomson Microelectronics TDA1175P Datasheet
LOW-NOISE VERTICALDEFLECTIONSYSTEM
.
COMPLETEVERTICAL DEFLECTION
SYSTEM
.
LOW NOISE
.
SUITABLEFOR HIGH DEFINITION
MONITORS
.
ESD PROTECTED
TDA1175P
DESCRIPTION
The TDA1175Pis a monolithicintegrated circuitin
POWERDIP16 plastic package. It is intended for
use in black and white and colour TV receivers.
Low-noise makes this device particularly suitable
for use in monitors.
The functions incorporated are : synchronization
circuit, oscillator and ramp generator,high power
gain amplifier,flybackgenerator,voltageregulator.
PINCONNECTIONS
RAMPOUTPUT
SUPPLYVOLTAGE
FLYBACK
GROUND
GROUND
POWERAMPLIFIER OUTPUT
POWERAMPLIFIER
SUPPLYVOLTAGE
REGULATED VOLTAGE
1
2
3
4
5
6
7
8
POWERDIP16
(Plastic Package)
ORDER CODE : TDA1175P
16
15
14
13
12
11
10
RAMPGENERATOR
COMPENSATION
AMP. INPUT
GROUND
GROUND
OSCILLATOR
SYNC.INPUT
9
HEIGHTADJUSTMENT
August 1995
1175P-01.EPS
1/8
TDA1175P
BLOCK DIAGRAM
C4 D
+V
S
A
SYNC
FREQ
C1
P1
11
10
TDA1175P
OSCILLATOR
CIRCUIT
SYNC
125413
TABS
HEIGHT
8
VOLTAGE
REGULATOR
RAMP
GENERATOR
916114
C
A
2
2
FLYBACK
GENERATOR
BUFFER
STAGE
LINEARITY
P3P2 R
C3
37
PREAMPLIFIER
R
B
POWER
AMPLIFIER
6
R
G
15
R
D
R
C
C6
R
H
C8
ABSOLUTEMAXIMUMRATINGS
Symbol Parameter Value Unit
V
V
6,V7
V
I
I
I
I
I
I
P
T
stg,Tj
s
14
o
o
o
3
3
10
tot
Supply Voltage at Pin 2 35 V
Flyback Peak Voltage 60 V
Power Amplifier Input Voltage + 10
– 0.5
Output Peak Current (non repetitive)at t =2ms 2 A
Output Peak Current at f = 50Hz, t ≤ 10µs
Output Peak Current at f= 50Hz, t > 10µs
Pin 3 DC Current at V6<V
Pin 3 Peak to Peak Flyback Currentfor f = 50Hz, t
2
≤ 1.5ms
fly
Pin 10 Current ±
Power Dissipation : at T
=90°C
tab
=70°C (freeair) (1)
at T
amb
2.5 A
1.5 A
100 mA
1.8 A
20
4.3
1
Storage and Junction Temperature – 40,+ 150 °
C9
YOKE
C7C5
R
E
R
F
1175P-02.EPS
V
V
mA
W
W
C
1175P-01.TBL
THERMAL DATA
Symbol Parameter Value Unit
R
th (j-tab)
R
th (j-amb)
(1) Obtained with tabs soldered to printed circuit with minimized copper area.
2/8
Thermal Resistance Junction-pin Max. 12
Thermal Resistance Junction-ambient Max. 80 °
°C/W
C/W
(1)
1175P-02.TBL
TDA1175P
ELECTRICALCHARACTERISTICS (T
=25°C,unless otherwisespecified)
amb
Symbol Parameter Test Conditions Min. Typ. Max. Unit Fig.
DC CHARACTERISTICS (Refer to the test circuits, VS= 35V)
I
2
I
7
–I
–I
–I
–I
∆I
16
I
16
V
V
V
V
V
6L
V
6H
V
V
|∆V
|
8
,
∆V
S
V
14
AC CHARACTERISTICS (Refer to the AC test circuit, V
I
s
I
10
V
t
fly
V
ON
f
o
Pin 2 Quiescent Current I3=0 7 14 mA 1b
Pin 7 Quiescent Current I6=0 8 17 mA 1b
Oscillator BiasCurrent V11= 1V 0.1 1 µ
11
Amplifier InputBias Current V14=1V 1 10
14
Ramp Generator Bias Current V16= 0 0.02 0.3 µ
16
Ramp Generator Current
16
Ramp Generator Non-linearity
Supply VoltageRange 10 35 V
s
Pin 1 Saturation Voltage to Ground I1= 1mA 1 1.4 V
1
Pin 3 Saturation Voltage to Ground I3= 10mA 1.5 2.5 V 1a
3
Qiuescent output Voltage
6
Output Saturation Voltage to
Ground
=20µA, V16=0
I
9
= 0 to 12V, I9=20µA
∆V
16
= 10V, R1 = 1kΩ,R2=1kΩ
V
s
V
= 35V, R1 = 3kΩ,R2=1kΩ
s
–I6= 0.1A
= 0.8A
–I
6
Output Saturation Voltage to Supply I6= 0.1A
= 0.8A
I
6
Regulated Voltageat Pin8 6.5 6.7 6.9 V 1b
8
Regulated Voltageat Pin9
9
Regulated VoltageDrift with Supply
|∆V
|
9
Voltage
∆V
S
Amplifier InputReference Voltage
Supply Current Iy=1A
=20µA
I
9
∆Vs = 10 to 35V
≤ 0.4V
V
10
= 22V, f =50Hz)
S
PP
Sync. Input Current (positive or
18.5 20 21.5
0.2 1 % 1b
4.1
4.4
8.2
4.7
8.8
9.4VV1a1a
0.9
1.2
1.8
2.2Vv1c1c
1.4
2.1
2.8
3.1VV1d1d
6.6 6.8 7 V 1b
1 2 mV/V 1b
2.20 2.27 2.35 V
140 mA 2
0.5 2 mA 2
negative)
Flyback Voltage Iy=1A
6
Flyback Time Iy=1A
PP
PP
45 V 2
0.7 ms 2
Peak to PeakOutput Noise Pin 11 Connected to GND 18 30 mVpp 2
Free Running Frequency
(P1 + R1) =300kΩ
36 43.5 Hz 2
A
µA
A
µA
C9 = 0.1 µF
f
OPER
∆f
Operating Frequency Range 10 120 Hz 2
Synchronization Range
= 0.5mA, C9 = 0.1µF
I
10
14 Hz 2
(P1+R1) = 300kΩ
∆f
∆V
|∆f
∆T
Frequency Drift with Supply Voltage Vs= 10 to 35V 0.005 Hz/V 2
S
|
Frequency Drift with tab
Temperature
ab
= 40 to 120°C
T
tab
0.01
Hz/°C
1a
1b
1a
1b
2
1175P-03.TBL
3/8
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