SGS Thomson Microelectronics TDA1170N Datasheet
LOW-NOISE TV VERTICALDEFLECTIONSYSTEM
.
COMPLETEVERTICAL DEFLECTION
SYSTEM
.
LOW NOISE
.
SUITABLE FOR HIGH DEFINITION
MONITORS
DESCRIPTION
The TDA1170Nis a monolithicintegratedcircuit in
a 12-lead quad in-line plastic package. It is intended for use in black and white and colour TV
receivers.Low-noisemakesthis deviceparticularly
suitable for usein monitors.The functionsincorporated are : synchronization circuit, oscillator and
ramp generator,high power gain amplifier, flyback
generator,voltage regulator.
TDA1170N
FINDIP12
(Plastic Package)
ORDER CODE : TDA1170N
PIN CONNECTIONS
POWER AMPLIFLIER OUTPUT
December 1992
RAMP OUTPUT
SUPPLY VOLTAGE
FLYBACK
GROUND
POWER AMPLIFLIER
SUPPLY VOLTAGE
REGULATED
VOLTAGE
1 12 RAMP GENERATOR
2
3
4
5
67
11
10
9
8
COMPENSATION
AMP. INPUT
GROUND
OSCILLATOR
SYNC. INPUT
HEIGHT ADJUSTMENT
1170N-01.EPS
1/8
TDA1170N
BLOCK DIAGRAM
C
4
D
A
+V
S
FREQ
SYNC
P
TDA1170N
1
9
OSCILLATOR
C
1
TABS
SYNC
CIRCUIT
8
6
VOLTAGE
REGULATOR
RAMP
GENERATOR
712110
HEIGHT
2
2
LINEARITY
C
2
R
A
35
FLYBACK
GENERATOR
BUFFER
STAGE
PP
3
C
3
AMPLIFLIER
PREAMPLIFLIER
R
B
POWER
R
H
4
R
G
C
8
11
57
R
D
R
C
C
6
ABSOLUTEMAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
4,V5
V
I
I
I
I
I
I
P
T
stg,Tj
S
10
o
o
o
3
3
8
tot
Supply Voltage at Pin 2 35 V
Flyback Peak Voltage 60 V
Power Amplifier Input Voltage + 10
– 0.5
Output Peak Current (non repetitive) at t = 2msec 2 A
Output Peak Current at f = 50Hz t ≤ 10µsec 2.5 A
Output Peak Current at f = 50Hz t > 10µsec 1.5 A
Pin 3 DC Current at V4<V
2
Pin 3 Peak to Peak Flyback Current for f = 50Hz, t
≤ 1.5msec 1.8 A
fly
100 mA
Pin 8 Current ± 20 mA
Power Dissipation : at Tab=90°C
=80°C (freeair)
at T
amb
5
1
Storage and Junction Temperature – 40, +150 °C
C
9
YOKE
CC
R
E
R
F
1170N-02.EPS
V
V
W
W
1170N-01.TBL
THERMALDATA
Symbol Parameter Value Unit
R
th j-tab
R
th j-amb
Thermal Resistance Junction-tab
Thermal Resistance Junction-ambient
* Obtained with tabs soldered to printed circuit with minimized copper area.
2/8
Max
Max
12
70
°C/W
°C/W *
1170N-02.TBL
TDA1170N
ELECTRICALCHARACTERISTICS
(Refer to the test circuits, V
=35V, T
S
DC CHARACTERISTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit Fig.
I
2
I
5
–I
–I
–I
–I
∆I
12
I
12
V
V
1
V
3
V
4
V
4L
V
4H
V
6
V
7
|
|∆V
6
;
∆V
S
V
10
R8 Pin 8 Input Resistance V
Pin 2 Quiescent Current I3=0 7 14 mA 1b
Pin 5 Quiescent Current I4=0 8 17 mA 1b
Oscillator Bias Current V9= 1V 0.1 1 µA1a
9
Amplifier Input Bias Current V10=1V 1 10 µA1b
10
Ramp Generator Bias Current V12= 0 0.02 0.3 µA1a
12
Ramp Generator Current I7=20µA, V12= 0 18.5 20 21.5 µA1b
12
Ramp Generator Non-linearity ∆V12 = 0 to 12V, I7=20µA 0.2 1 % 1b
Supply Voltage Range 10 35 V
s
Pin 1 Saturation Voltage to Ground I1= 1mA 1 1.4 V
Pin 3 Saturation Voltage to Ground I3= 10mA 300 450 mV 1a
Qiuescent output Voltage VS= 10V
Output Saturation Voltage to Ground – I4= 0.1A
Output Saturation Voltage to Supply I4= 0.1A
Regulated Voltage at Pin 6 6.1 6.5 6.9 V 1b
Regulated Voltage at Pin 7 I7=20µA 6.2 6.6 7 V 1b
∆V
7
Regulated Voltage Drift with Supply
Voltage
∆V
S
Amplifier Input Reference Voltage 2.07 2.2 2.3 V
=25oC,unless otherwisespecified)
amb
R1= 1kΩ,R2=1kΩ
V
= 35V
S
R1= 3kΩ,R2=1kΩ
= 0.8A
–I
4
= 0.8A
I
4
= 10 to 35V 1 mV/V 1b
∆V
S
≤ 0.4V 1 MΩ 1a
8
4.1 4.4 4.75 V 1a
8.3 8.8 9.45 V 1a
0.9
1.2
1.9
2.3VV
1.4
2.1
2.8
3.2VV
1c
1c
1d
1d
1170N-03.TBL
3/8
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