SGS Thomson Microelectronics T830W, T820W Datasheet
T820W
FEATURES
=8A
I
TRMS
V
DRM=VRRM
=400V to 700V
EXCELLENTSWITCHINGPERFORMANCES
INSULATINGVOLTAGE= 1500V
(RMS)
U.L. RECOGNIZED: E81734
DESCRIPTION
TheT820/830Wtriacs usehighperformanceglass
passivated chip technology, housed in a fully
moldedplasticISOWATT220ABpackage.
TM
The SNUBBERLESS
concept offers suppression of R-C network, and is suitable for applications such as phase control and static switch on
inductiveand resistive loads.
T830W
SNUBBERLESS TRIAC
A
2
A
1
G
A
1
A
2
G
ISOWATT220AB
(Plastic)
ABSOLUTERATINGS (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
RMS on-statecurrent
Tc= 95°C8A
(360° conductionangle)
I
TSM
Non repetitivesurgepeak on-state current
(T
initial= 25°C)
j
tp = 16.7 ms
(1 cycle, 60 Hz)
tp =10 ms
88 A
100
(1/2 cycle, 50 Hz)
2
tI
I
dI/dt Criticalrateof rise of on-state current
2
t Value(half-cycle,50 Hz) tp =10 ms 50 A2s
Gate supply: I
=500mA dIG/dt =1A/µs.
G
Repetitive
F = 50Hz
20 A/µs
NonRepetitive 100
T
stg
T
j
Storagetemperaturerange
Operatingjunctiontemperature range
Tl Maximumlead temperaturefor soldering during 10s at4.5 mm
- 40to +150
- 40to +125
260 °C
from case
Symbol Parameter
T820 / 830-xxxW
400 600 700
°C
Unit
V
DRM
V
RRM
April 1995
Repetitivepeak off-statevoltage
T
=125°C
j
400 600 700 V
1/5
T820W / 830W
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth(j-a) Junctionto ambient 50 °C/W
Rth(j-c) Junctionto casefor A.C(360°conductionangle) 3.1 °C/W
GATE CHARACTERISTICS (maximumvalues)
P
=1W PGM=10W(tp =20µs) IGM=4A(tp=20µs
G (AV)
ELECTRICALCHARACTERISTICS
Symbol TestConditions Quadrant T820 T830 Unit
I
GT
V
GT
V
GD
tgt V
I
*I
H
V
TM
I
DRM
I
RRM
VD=12V (DC) RL=33Ω
Tj= 25°C I-II-III MAX 20 30 mA
VD=12V (DC) RL=33Ω Tj= 25°C I-II-III MAX 1.5 V
VD=V
DRMRL
D=VDRMIG
/dt= 3Aµs
dl
G
= 100mA Gateopen Tj=25°C MAX 35 50
T
=3.3kΩ Tj= 125°C I-II-III MIN 0.2 V
=500mA
Tj= 25°C I-II-III TYP 2 µs
*ITM= 11A tp= 380µs Tj=25°C MAX 1.5 V
VDRMrated
V
rated
RRM
Tj= 25°C MAX 10 µA
Tj= 125°C MAX 2 mA
dV/dt* Linearslopeup to
=67%V
V
D
DRM
Gate open
Tj= 125°C MIN 200 300 V/µs
(dV/dt)c* (dI/dt)c= 4.5 A/ms (seenote) Tj= 125°C MIN 10 20 V/µs
* For either polarity of electrode A2voltage with referenceto electrode A1.
Note : Inusual applications where (dI/dt)c is below 4.5 A/ms,the (dV/dt)c isalways lowerthan10V/µs, and, therefore, it is unnecessary touse
a snuber R-C network accross T820W / T830W triacs.
2/5
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