SGS Thomson Microelectronics T835-400B, T835-600B, T810-600B, T810-400B Datasheet
T810-xxxB
®
FEATURES
I
= 8 A
TRMS
SENSITIVE GATE : I
10mA and 35mA
GT ≤
HIGH COMMUTATION T E CHNOLO GY
HIGH I
CAPABILITY
TSM
DESCR IPT ION
The T810-xxxB and T835-xxxB series are using
high performance TOPGLASS PNPN technology.
These devices are intented for AC control applications, using surface mount technology where high
commutating and surge performances are required (like power tools, Solid State Relay).
ABSOLUTE MAXIMUM RATINGS
T835-xxxB
HIGH PERFORMANCE TRIACS
A2
A2
A1
DPAK
(Plastic)
G
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current
Tc =110 °C8 A
(360° conduction angle)
I
TSM
Non repetitive surge peak on-state current
( Tj initial = 25°C )
2
t
I
dI/dt
2
I
t value for fusing
Critical rate of rise of on-state current
I
G
= 50mA diG/dt = 0.1A/µs
tp = 8.3 ms 85 A
tp = 10 ms 80
tp = 10 ms 32 A
Repetitive
20 A/µs
F = 50 H z
Non
100
2
Repetitive
Tstg
Tj
T
Storage temperature range
Operating junction temperature range
Maximum temperature for soldering during 10 s
- 40 t o + 150
- 40 t o + 125
260 °C
°C
°C
Symbol Parameter T810-/T835- Unit
400B 600B
V
V
DRM
RRM
Repetitive peak off-state voltage
Tj = 125 °C
400 600 V
s
May 1998 Ed : 1A
1/5
T810-xxxB / T835-xxxB
THERMAL RES IST ANCE S
Symbol Parameter Value Unit
Rth (j-c)
Rth (j-c)
Rth (j-a)
Junction to case for DC
Junction to case for AC 360° conduction angle ( F= 50 Hz)
2
Junction to ambient (S = 0.5 cm
)
2.1 °C/W
1.6 °C/W
70 °C/W
GATE CHARACTERISTI CS (maximum values)
P
= 1 W PGM= 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs)
G(AV)
ELECTRICAL CHARACTERIST ICS
Symbol Test Conditions Quadrant Suffix Unit
T810 T835
I
GT
V
GT
V
GD
I
L
*
I
H
V
TM
I
DRM
I
RRM
VD=12V (DC) RL=33Ω
VD=12V (DC) RL=33Ω
VD=V
IG=1.2 I
I
= 100mA gate open
T
*
I
= 11A tp= 380µs
TM
V
DRM
V
RRM
RL=3.3kΩ
DRM
GT
Rated
Rated
Tj=25°C I-II-III MAX 10 35 mA
Tj=25°CI-II-IIIMAX 1.3 V
Tj=125°C I-II-III MIN 0.2 V
Tj=25°C I-II-III MAX 25 60 mA
Tj=25°C MAX 15 35 mA
Tj=25°CMAX1.5V
Tj=25°CMAX10µA
Tj=125°CMAX2mA
dV/dt *
Linear slope up to
=67%V
V
D
DRM
Tj=125°C MIN 50 500 V/µs
gate open
(dI/dt)c *
(dV/dt)c = 0.1V/µs
(dV/dt)c = 15V/µs
* For either polarity of electrode A2 voltage with reference to electrode A1.
Tj=125°C MIN 5.4 9 A/ms
Tj=125°C MIN 2.7 4.5 A/ms
ORDERING INFORMATION Add "-TR" suffix for Tape and Reel shipment
TRIAC
T
8 10 -
600
VOLTAGE
B
CURRENT
S ENSITIVITY
2/5
PACKAGE
B = DPAK
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