SGS Thomson Microelectronics T435-800W, T435-800H, T435-800T, T435-700W, T435-700T Datasheet
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®
T4 Series
SNUBBERLESS™ & LOGIC LEVEL 4A TRIACS
MAIN FEATURES:
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
GTT (Q1)
4A
600 to 800 V
5 to 35 mA
DESCRIPTION
Based on ST’s Snubberless / Logic level technology providing h igh comm ut ation perfo rmances , t he
T4 series is suitable for use on AC inductive loads.
They are recommended for applications using
universal motors, electrovalves.... such as kitchen
aid equipments, power tools, dishwashers,...
Available in a fully insulated package, the
T4...-...W version complies with UL standards (ref.
E81734).
A1
A1
A2
G
A2
A2
G
DPAK
(T4-B)
TO-220AB
(T4-T)
A2
A2
G
A1
A2
A1
A2
G
IPAK
(T4-H)
A1
A2
G
ISOWATT 220AB
(T4-W)
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
I
T(RMS)
I
TSM
²
I
dI/dt
I
GM
P
G(AV)
T
stg
T
June 2003 - Ed: 5
RMS on-state current (full sine wave) DPAK / IPAK
TO-220AB
Tc = 110°C
ISOWATT 220AB Tc = 105°C
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
tI
²
t Value for fusing
Critical rate of rise of on-state current
= 2 x IGT , tr ≤ 100 ns
I
G
F = 50 Hz t = 20 ms 30 A
F = 60 Hz t = 16.7 ms 31
tp = 10 ms 5.1
F = 120 Hz Tj = 125°C 50 A/µs
Peak gate current tp = 20 µs Tj = 125°C 4 A
Average gate power dissipation Tj = 125°C 1 W
Storage junction temperature range
Operating junction temp erature range
j
- 40 to + 150
- 40 to + 125
4
A
A
°C
²
s
1/8
T4 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol Test Conditions Quadrant T4
T405 T410 T435
I
GT
V
V
(1)
GT
GD
= 12 V RL = 30 Ω
V
D
VD = V
RL = 33 kΩ
DRM
I - II - III MAX. 5 10 35
I - II - III MAX. 1.3 V
I - II - III MIN. 0.2
Tj = 125°C
(2)
I
H
I
L
= 100 mA
I
T
IG = 1.2 I
GT
MAX. 10 15 35 mA
I - III MAX. 10 25 50 mA
II 15 30 60
dV/dt (2) V
= 67 %V
D
gate open Tj = 125°C
DRM
MIN. 20 40 400 V/µs
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs Tj = 125°C MIN. 1.8 2.7 - A/ms
(dV/dt)c = 10 V/µs Tj = 125°C 0.9 2.0 Without snubber
Tj = 125°C - - 2.5
STATIC CHARACTERISTICS
Symbol Test Conditions Value Unit
I
(2)
V
TM
(2)
V
to
(2)
R
d
I
DRM
I
RRM
Note 1: mi nimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
= 5.5 A tp = 380 µs
TM
Threshold voltage Tj = 125°C MAX. 0.9 V
Dynamic resistance Tj = 125°C MAX. 120 mΩ
V
= V
DRM
RRM
Tj = 25°C MAX. 1.6 V
Tj = 25°C
Tj = 125°C 1 mA
MAX.
5µA
Unit
mA
V
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
R
th(j-a)
S = Copper surface under tab
T
2/8
Junction to case (AC) DPAK
IPAK
TO-220AB
ISOWATT220AB 4.0
Junction to ambient
S = 0.5 cm
²
DPAK 70
TO-220AB
ISOWATT220AB
IPAK 100
2.6
60
°C/W
°C/W
PRODUCT SELECTOR
T4 Serie s
Part Number
Voltage (xxx)
Sensitivity Type
Package
600 V 700 V 800 V
T405-xxxB X X X 5 mA Logic level DPAK
T405-xxxH X X X 5 mA Logic level IPAK
T405-xxxT X X X 5 mA Logic level TO-220AB
T405-xxxW X X X 5 mA Logic level ISOWATT220AB
T410-xxxB X X X 10 mA Logic level DPAK
T410-xxxH X X X 10 mA Logic level IPAK
T410-xxxT X X X 10 mA Logic level TO-220AB
T410-xxxW X X X 10 mA Logic level ISOWATT220AB
T435-xxxB X X X 35 mA Snubberless DPAK
T435-xxxH X X X 35 mA Snubberle ss IPAK
T435-xxxT X X X 35 mA Snubbe rle ss TO-220AB
T435-xxxW X X X 35 mA Snubberless ISOWATT220AB
ORDERING INFORMA T IO N
T 4 05 - 600 B (-TR)
TRIAC
SERIES
CURRENT:4A
SENSITIVITY:
05: 05mA
10: 10mA
35: 35mA
VOLTAGE:
600: 600V
700: 700V
800: 800V
PACKING MODE:
Blank:Tube
PACKAGE:
B: DPAK
H: IPAK
T:TO-220AB
W: ISOWATT220AB
-TR: DPAK Tape & Reel
OTHER INFORMATION
Part Number Marking Weight
Base
quantity
T4xx-yyyB T4xxyyyB 0.3 g 75 Tube
T4xx-yyyB-TR T4xxyyyB 0.3 g 2500 Tape & reel
T4xx-yyyH T4xxyyy 0.4 g 75 Tube
T4xx-yyyT T4xxyyyT 2.3 g 50 Tube
T4xx-yyyW T4xxyyyW 2.1 g 50 Tube
Note: xx = sensitivity , yyy = voltage
Packing
mode
3/8
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