SGS Thomson Microelectronics STY60NA20 Datasheet
N - CHANNEL200V - 0.030Ω - 60 A - Max247
FAST POWER MOS TRANSISTOR
TYPE V
DSS
ST Y60NA20 200 V < 0.032 Ω 60 A
R
DS(on)
I
D
STY60NA20
PRELIMINARY DATA
■ TYPICALR
■ EFFICIENTANDRELIABLE MOUNTING
DS(on)
= 0.030Ω
THROUGH CLIP
■ ± 30V GATETO SOURCEVOLTAGERATING
■ REPETITIVEAVALANCHETESTED
■ LOW INTRINSICCAPACITANCE
■ 100%AVALANCHE TESTED
■ GATECHARGE MINIMIZED
■ REDUCEDTHRESHOLD VOLTAGESPREAD
DESCRIPTION
The M ax 247TMpackage is a new high volum e
power package exibiting the same foot print as t h e
indus try standard TO-247, but designe d t o
accomodate much larger si licon c h ips , normally
suppl ied in bigger p ac kages suc h as T O -264. Th e
increased die ca pacity m akes the device ideal to
reduce com ponent cou nt in multiple parallele d
desig ns and save boar d s pace with respect to
larger packa ges.
APPLICATIONS
■ HIGHCURRENT, HIGHSPEED SWITCHING
■ SWITCHMODE POWERSUPPLIES(SMPS)
■ DC-AC CONVERTERS FORWELDING
EQUIPMENTANDUNINTERRUPTIBLE
POWERSUPPLIES (UPS)
3
2
1
Max247
TM
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
DGR
V
I
DM
P
T
(•) Pulse width limited by safe operating area
August 1998
Drain-s ource Voltage (VGS= 0 ) 200 V
DS
Drain- gate Volt age ( RGS=20kΩ)
Gate-source Volt age ± 30 V
GS
I
Drain Cur rent (cont in uous ) at Tc=25oC60A
D
I
Drain Cur rent (cont in uous ) at Tc=100oC40A
D
200 V
(•) Drain Current (pulsed) 240 A
Total Dissipation at Tc=25oC 300 W
tot
Derat ing F actor 2.4 W/
Stora ge Temper at u re -65 to 150
stg
T
Max. Op er at i ng Junc t ion Temper a t ur e 150
j
o
C
o
C
o
C
1/4
STY60NA20
THERMAL DATA
R
thj-case
R
thj- amb
R
thc-sin k
AVALANCHE CHARACTERISTICS
Symb o l Para met er Max Value Uni t
I
AR
E
Ther mal Resistance Junct ion-cas e Max
Ther mal Resistance Junct ion-ambi ent Max
Ther mal Resistance Case-Heatsink Typ
with Conductive Grease
Avalanche Current , Rep et it ive or Not -R epe t it ive
(pulse width lim it e d by T
Singl e Pulse Ava lanche Energy
AS
(starti ng T
=25oC, ID=IAR,VDD=50V)
j
max)
j
0.42
40
0.05
60 A
3000 mJ
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
= 250 µAV
I
D
GS
=0
200 V
Break dow n Voltage
I
I
DSS
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- bod y Le akage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
= Max Rating Tc=100oC
V
DS
= ± 30 V
V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
GS(th )
R
DS(on)
Gat e Thr e shold Volt a ge
St at i c Drain -s ource O n
V
DS=VGSID
=250µA
VGS=10V ID= 30A 0.03 0.032 Ω
234V
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
60 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on ductance
C
C
C
Input Capacitan c e
iss
Out put Ca pac itanc e
oss
Reverse Tr ansfer
rss
Capaci ta nc e
VDS>I
D(on)xRDS(on)maxID
=30A 20 S
VDS=25V f=1MHz VGS= 0 6000
1400
500
8000
1900
700
µA
µA
pF
pF
pF
2/4
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