SGS Thomson Microelectronics STY30NA50 Datasheet
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE V
DSS
ST Y30NA50 500 V < 0.175 Ω 30 A
R
DS(on)
I
D
STY30NA50
PRELIMINARY DATA
■ TYPICALR
■ EFFICIENTANDRELIABLEMOUNTING
DS(on)
=0.15 Ω
THROUGH CLIP
■ ± 30V GATE TO SOURCE VOLTAGERATING
■ REPETITIVEAVALANCHETESTED
■ LOW INTRINSIC CAPACITANCE
■ 100% AVALANCHETESTED
■ GATECHARGEMINIMIZED
■ REDUCEDTHRESHOLD VOLTAGESPREAD
DESCRIPTION
The Max247TMpackage is a new high volume
power pac kage ex ibit ing th e same foot pr int as the
indust ry standar d TO -247, but designed to
accomodate m uch large r silicon chip s , norm ally
supplie d in bigger packages such as TO-26 4. T he
increased die capacity makes t he device ideal to
reduce component count in multiple p aralleled
designs and sav e board space with respect to
larger packages.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEEDSWITCHING
■ SWITCHMODE POWER SUPPLIES (SMPS)
■ DC-ACCONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES (UPS)
Max247
TM
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
DGR
V
I
DM
P
T
(•) Pulse width limited by safe operating area
March 1996
Drain-source Voltage (VGS= 0) 500 V
DS
Drain- gate Voltage (RGS=20kΩ) 500 V
Gate-sourc e Voltage ± 30 V
GS
I
Drain Current (c ont inuo us) a t Tc=25oC30A
D
I
Drain Current (c ont inuo us) a t Tc=100oC19A
D
(•) Drain Current (puls ed) 120 A
Total Dissipat i on at Tc=25oC 300 W
tot
Derat ing Factor 2.4 W/
Stora ge Temperatu re -55 to 150
stg
T
Max. Operat ing J unct i on T em per at u r e 150
j
o
C
o
C
o
C
1/4
STY30NA50
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sin k
AVALANCHE CHARACTERISTICS
Symb o l Para met er Max Value Uni t
I
AR
E
E
I
AR
Ther mal Resistance Junct ion-cas e Max
Ther mal Resistance Junct ion-ambient Max
Ther mal Resistance Case-Heats ink Typ
with Conduc t ive Grease
Avalanche Current, Repetit ive or Not-Repetitive
(pulse width lim i t ed by T
Single Pu lse Avalanc he E nerg y
AS
(starti ng T
Repetitive Av alanche Energy
AR
=25oC, ID=IAR,VDD=50V)
j
(pulse width lim i t ed by T
max, δ <1%)
j
max, δ <1%)
j
Avalanche Current, Repetit ive or Not-Repetitive
(T
=100oC, p ulse width limited by Tjmax, δ <1%)
c
0.42
40
0.05
30 A
3000 mJ
180 mJ
19 A
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID= 250 µAV
= 0 500 V
GS
Break dow n Voltage
I
I
DSS
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- bod y Leaka ge
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRatingx0.8 Tc= 125oC
V
DS
V
= ± 30 V ± 100 nA
GS
200
1000µAµA
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
GS(th )
R
DS(on)
I
D(on)
Gat e Thre shold Volt age VDS=VGSID=250µA2.2533.75V
St at ic Drain-source On
Resistance
VGS=10V ID=15A
=10V ID=15A Tc=100oC
V
GS
On State Drain Current VDS>I
D(on)xRDS(on)max
30 A
0.15 0.175
0.35
VGS=10V
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on ductance
C
C
C
Input Capac it an ce
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=15A 25 S
VDS=25V f=1MHz VGS= 0 6150
780
220
8000
1000
290
Ω
Ω
pF
pF
pF
2/4
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