SGS Thomson Microelectronics STY140NS10 Datasheet

STY140NS10

N-CHANNEL 100V - 0.009 Ω - 140A MAX247 ™

MESH OVERLAY™ POWER MOSFET

TYPE

V

DSS

STY140NS10 100V <0.011

■ TYPICAL R

■ STANDARD THRESHOLD DRIVE

■ 100% AVALANCHE TESTED

(on) = 0.009Ω

DS

R

DS(on)

I

D

140A

Ω

DESCRIPTION

Using the latest high voltage MESH OVERLAY™ process, STMicroe lectronics has desig ned an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

APPLICATIONS

■ HIGH CURRENT, HIGH SWITCHING SPEED

■ SWITCH MODE POWER SUPPLY (SMPS)

3

2

1

Max247™

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

(

I

DM

P

tot

E

AS

dv/dt

T

stg

T

j

(

Pulse width limited by safe operating area. (1) Starting Tj = 25 oC, ID = 70A, VDD= 50V

•)

.

Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ)

100 V 100 V

Gate- source Voltage ± 20 V

Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C

•)

Drain Current (pulsed) 560 A Total Dissipation at TC = 25°C

140 A

99 A

450 W

Derating Factor 3 W/°C

(1)

Single Pulse Avalanche Energy 2900 mJ

(2)

Peak Diode Recovery voltage slope 5 V/ns Storage Temperature -55 to 175 °C Operating Junction Temperature -55 to 175 °C

(2) I

≤140A, di/dt ≤200A/µs, VDD ≤ V

SD

(BR)DSS

, Tj ≤ T

JMAX.

1/8August 2001

STY140NS10

THERMA L D ATA

Rthj-case

Rthj-amb

T

Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose

j

Max Max

Typ

0.33 30

300

°C/W °C/W

°C

ELECTRICAL CHARACTERISTICS (T

= 25 °C unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

V

(BR)DSS

Drain-source Breakdown

= 250 µA, VGS = 0

D

100 V

Voltage

V

= Max Rating

DS

V

= Max Rating TC = 125°C

DS

V

= ± 20V

GS

1

10

±100 nA

ON

(1)

I

DSS

I

GSS

Zero Gate Voltage Drain Current (V

GS

Gate-body Leakage Current (V

DS

= 0)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage Static Drain-source On

= VGS I

DS

V

= 10 V ID = 70 A

GS

= 250 µA

D

24V

0.009 0.011

V

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(*)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance Input Capacitance

Output Capacitance Reverse Transfer Capacitance

V

= 20 V ID= 70 A

DS

= 25V, f = 1 MHz, VGS = 0

V

DS

50 S

12600

2100

690

µA µA

Ω

pF pF pF

2/8

STY140NS10

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 50 V ID = 70 A

t

d(on)

Turn-on Delay Time

t

r

Rise Time

V

DD

R

= 4.7 Ω VGS = 10 V

G

(Resistive Load, Figure 1)

Q

g

Q

gs

Q

gd

Total Gate Charge Gate-Source Charge Gate-Drain Charge

=50V ID=140A VGS=10V

V

DD

(see test circuit, Figure 2)

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 50 V ID = 70 A

t

d(off)

Turn-off Delay Time

t

f

Fall Time

V

DD

R

= 4.7Ω, V

G

GS

= 10 V

(Resistive Load, Figure 1)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(*)

Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.

(

•)Pulse width limited by s afe operating area.

Source-drain Current

(•)

Source-drain Current (pulsed)

(*)

Forward On Voltage Reverse Recovery Time

Reverse Recovery Charge Reverse Recovery Current

I

= 140 A VGS = 0

SD

= 140 A di/dt = 100A/µs

I

SD

V

= 20 V Tj = 150°C

r

(Inductive Load, Figure 3)

40

150

450

70

170

465 270

600 nC

140 560

1.5 V

275

2

15

ns ns

nC nC

ns ns

A A

ns

µ

A

C

Safe Operating Area Thermal Impedance

3/8