Datasheet STTA2006PI, STTA2006P Datasheet (SGS Thomson Microelectronics)



STTA2006P/PI

TURBOSWITCH

ULTRA-FASTHIGH VOLTAGE DIODE



MAINPRODUCTCHARACTERISTICS

I

F(AV)

V

RRM

(typ) 30ns

t

rr

(max) 1.5V

V

F

20A

600V

FEATURESAND BENEFITS

SPECIFICTO”FREEWHEEL MODE” OPERA­TIONS:FREEWHEELORBOOSTERDIODE.

ULTRA-FASTAND SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN

BOTH THE DIODE AND THE COMPANION
TRANSISTOR.

HIGHFREQUENCY OPERATIONS.
INSULATEDPACKAGE: DOP3I

Electricalinsulation: 2500V

RMS

Capacitance< 12 pF

K

STTA2006P

SOD93

A

K

A

K

Isolated

DOP3I

STTA2006PI

DESCRIPTION

The TURBOSWITCH is a very high performance
series of ultra-fast high voltagepowerdiodes from
600Vto1200V.
TURBOSWITCH family, drastically cuts losses in
boththe diodeand the associatedswitching IGBT
or MOSFET in all ”freewheel mode” operations

ABSOLUTE RATINGS

(limitingvalues)

and is particularly suitable and efficient in Motor
controlfreewheelapplicationsandinboosterdiode
applicationsin power factor controlcircuitries.
Packaged either in SOD93 or in DOP3I, these
600V devices are particularly intended for use on
240Vdomesticmains.

Symbol Parameter Value Unit

V

RRM

V

RSM

I

F(RMS)

I

FRM

I

FSM

T

T

stg

TM :TURBOSWITCH is atrademarkof STMicroelectronics

November 1999 - Ed: 3D

Repetitivepeak reversevoltage 600 V
Non repetitivepeakreverse voltage 600 V
RMSforwardcurrent 50 A
Repetitivepeak forwardcurrent tp= 5µs F= 5kHzsquare 270 A
Surgenon repetitiveforward current tp=10ms sinusoidal 180 A
Maximumoperating junction temperature 150 °C

j

Storagetemperaturerange -65to 150 °C

1/8

STTA2006P/PI

THERMAL AND POWER DATA

Symbol Parameter Testconditions Value Unit

R

P

th(j-c)

P

1

max

Junctionto casethermal
resistance

Conductionpower dissipation
I

=20Aδ=0.5

F(AV)

Totalpowerdissipation
Pmax= P1 + P3 (P3=10% P1)

SOD93
DOP3I

SOD93
DOP3I

SOD93
DOP3I

Tc= 96°C
Tc=74°C

Tc= 90°C
Tc=66°C

1.5

2.1
36 W

40 W

STATICELECTRICAL CHARACTERISTICS

Symbol Parameter Testconditions Min Typ Max Unit

V

F*

I

R**

V

to

Forwardvoltagedrop IF=20A Tj = 25°C

Tj = 125°C 1.25

Reverseleakage current VR=0.8x

V

RRM

Thresholdvoltage Ip< 3.I

Tj=25°C
Tj = 125°C 2.5

Tj = 125°C 1.15 V

AV

1.75

1.5

100

6

rd Dynamicresistance 17 m

Test pulse: *tp = 380µs, δ <2%

** tp= 5 ms,

δ

<2%

To evaluatethe maximumconductionlossesuse the followingequation:
P=V

toxIF(AV)

+rdxI

F2(RMS)

°C/W

V
V

µA

mA

Ω

DYNAMICELECTRICALCHARACTERISTICS
TURN-OFF SWITCHING

Symbol Parameter Testconditions Min Typ Max Unit

t

rr

I

RM

S factor Softnessfactor Tj = 125°CV

Reverserecovery
time

Maximumreverse
recoverycurrent

Tj = 25°C

=0.5A IR= 1A Irr = 0.25A

I

F

=1A dIF/dt=-50A/µsVR=30V

I

F

Tj = 125°C VR = 400V IF=20A
dI

/dt= -160A/µs

F

dI

/dt= -500A/µs

F

=400V IF=20A

R

/dt= -500 A/µs 0.42

dI

F

30

60

12.5

17.5

TURN-ON SWITCHING

Symbol Parameter Test conditions Min Typ Max Unit

t

fr

Forwardrecovery
time

V

Fp

Peakforwardvoltage Tj = 25°C

Tj = 25°C
I

=20A,dIF/dt = 160 A/µs

F

measuredat, 1.1

=20A,dIF/dt = 160 A/µs12

I

F

VFmax

×

600

ns

A

/

ns

V

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STTA2006P/PI

Fig.1: Conductionlosses versusaveragecurrent.

P1(W)

50

40

30

20

10

0

02468101214161820

=tp/T

T

=0.1

tp

IF(av)(A)

=0.2

=1

=0.5

Fig. 3: Relative variation of thermal transient

impedancejunction to case versuspulseduration.

Fig. 2: Forward voltage drop versus forward
current.

VFM(V)

3.50

MAXIMUM VALUES

3.00

2.50

o

Tj=125 C

2.00

1.50

1.00

0.50

0.00

0.1 1 10 100

IFM(A)

200

Fig. 4: Peak reverse recovery current versus

/dt.

dI

F

IRM(A)

40.0

90% CONFIDENCE Tj=125 C

37.5

35.0

VR=400V

32.5

30.0

27.5

25.0

22.5

20.0

17.5

15.0

12.5

10.0

7.5

5.0

2.5

0.0
0 100 200 300 400 500 600 700 800 9001000

o

IF= 40A

IF= 20A

IF=10A

dIF/dt(A/ s)

Fig.5: Reverserecoverytime versusdIF/dt.

trr(ns)

250
225
200
175
150
125
100

75
50

IF=10A

25

0

0 100 200 300 400 500 600 700 800 9001000

90% CONFIDENCE Tj=125 C

VR=400V

IF=40A

IF= 20A

dIF/dt(A/ s)

Fig. 6: Softnessfactor(tb/ta) versusdIF/dt.

S factor

o

1.2

1.1

Typical values Tj=125 C

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0
0 100 200 300 400 500 600 700 800 900 1000

dIF/dt(A/ s)

o

IF<2xIF(av)

VR=400V

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STTA2006P/PI

Fig. 7: Relative variation of dynamic parameters

versusjunctiontemperature(referenceTj=125°C).

2.50

2.25

2.00

1.75

S factor

1.50

1.25

1.00

0.75

0.50
0 255075100125150

IRM

Tj(oC)

Fig.9: Forwardrecovery time versusdIF/dt.

tfr(ns)

600
550
500

90% CONFIDENCE Tj=125 C

VFr=1.1*VF max.

450
400
350
300
250
200
150
100

50

0

0 50 100 150 200 250 300 350 400 450 500

dIF/dt(A/ s)

o

IF=IF(av)

Fig. 9: Transient peak forward voltage versus

/dt.

dI

F

VFP(V)

16
15

90% CONFIDENCE Tj=125 C

14

IF=IF (av)

13
12
11
10

9
8
7
6
5
4
3
2
1
0

0 50 100 150 200 250 300 350 400

dIF/dt(A/ s)

o

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APPLICATION DATA

STTA2006P/PI

The TURBOSWITCH is especially designed to
provide the lowest overall power losses in any
”FREEWHEEL Mode” application (Fig.A)
considering both the diode and the companion

TOTALLOSSES

due to the diode

P = P1+ P2+ P3+ P4+ P5 Watts

CONDUCTION

LOSSES

in the diode

REVERSE

LOSSES

in the diode

transistor,thusoptimizing the overallperformance
in the end application.
The way of calculating the power losses is given
below:

SWITCHING

LOSSES

in the diode

SWITCHING

LOSSES

in the tansistor

due to thediode

Fig.A :”FREEWHEEL”MODE.

SWITCHING

TRANSISTOR

V

R

t

F=1/T =t/T

IL

DIODE:

TURBOSWITCH

T

LOAD

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STTA2006P/PI

APPLICATION DATA (Cont’d)

Fig.B: STATICCHARACTERISTICS

I

I

F

Rd

V

R

V

tOVF

I

R

Fig.C: TURN-OFFCHARACTERISTICS

Conduction losses:

P1= V

t0.IF(AV)+Rd.IF2(RMS)

V

Reverse losses:

R.IR

.(1-δ)

P2= V

V

IL

TRANSISTOR

I

I

dI /dt

F

V

I

RM

trr = ta + tb S = tb / ta

tbta

dI /dt

R

DIODE

t

Fig.D: TURN-ONCHARACTERISTICS

I

F

I

dI /dt

F

Fmax

VR

Turn-onlosses:

(inthe transistor,dueto thediode)

2

I

×

× (3+2×S) ×

RM

6

xdI

I

×

I

RM

L

2

x

dI

⁄

dt

F

× (S+ 2 ) ×

⁄

dt

F

F

F

P5 =

+

V

R

V

×

R

Turn-offlosses(in the diode):

V

t

P3 =

R

2

×

I

×

xdI

⁄

F

S×F

dt

RM

6

P3 and P5 are suitable for power MOSFET and
IGBT

6/8

0

V

F

V

Fp

1.1V

F

0t

tfr

t

Turn-onlosses:

P4= 0.4 (V

V

F

FP-VF

).I

Fmax.tfr

.F

PACKAGEMECHANICAL DATA

SOD93

STTA2006P/PI

DIMENSIONS

REF.

A 4.70 4.90 0.185 0.193
C 1.17 1.37 0.046 0.054
D 2.50 0.098

D1 1.27 0.050

E 0.50 0.78 0.020 0.031
F 1.10 1.30 0.043 0.051

F3 1.75 0.069

G 10.80 11.10 0.425 0.437
H 14.70 15.20 0.578 0.598

L 12.20 0.480
L2 16.20 0.638
L3 18.0 0.709
L5 3.95 4.15 0.156 0.163
L6 31.00 1.220

O 4.00 4.10 0.157 0.161

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

Coolingmethod: by conduction(C)
Recommendedtorque value: 0.8 m.N
Maximumtorque value : 1.0 m.N

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STTA2006P/PI

PACKAGEDATA

DOP3IISOLATED

DIMENSIONS

REF.

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 4.4 4.6 0.173 0.181
B 1.45 1.55 0.057 0.061
C 14.35 15.60 0.565 0.614
D 0.5 0.7 0.020 0.028
E 2.7 2.9 0.106 0.114
F 15.8 16.5 0.622 0.650
G 20.4 21.1 0.815 0.831
H 15.1 15.5 0.594 0.610
K 3.4 3.65 0.134 0.144

L 4.08 4.17 0.161 0.164
N 10.8 11.3 0.425 0.444
P 1.20 1.40 0.047 0.055
R 4.60 0.181

Coolingmethod: byconduction(C)
Recommendedtorque value: 0.8 m.N.
Maximumtorque value : 1.0 m.N.

Orderingtype Marking Package Weight Base qty Deliverymode

STTA2006P STTA2006P SOD93 3.79g 30 Tube

STTA2006PI STTA2006PI DOP3I 4.52g 30 Tube

Epoxymeets UL94,V0

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implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change withoutnotice. This publication supersedes and replaces all information previously supplied.
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 1999 STMicroelectronics - Printed in Italy - All rights reserved.

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