SGS Thomson Microelectronics STTA1212D Datasheet



STTA1212D

TURBOSWITCH

ULTRA-FASTHIGH VOLTAGE DIODE



MAINPRODUCTCHARACTERISTICS

I

F(AV)

V

RRM

(typ) 50 ns

t

rr

(max) 2.0 V

V

F

12A

1200V

FEATURESAND BENEFITS

ULTRA-FAST,SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN

BOTH THE DIODE AND THE COMPANION
TRANSISTOR.

HIGHFREQUENCYAND/ORHIGHPULSED
CURRENTOPERATION.

HIGHREVERSEVOLTAGECAPABILITY.

DESCRIPTION

K

TO-220AC

A

K

TURBOSWITCH 1200V drastically cuts losses in
allhighvoltageoperationswhich require extremely
fast,soft andnoise-freepower diodes.Due to their
optimizedswitchingperformancesthey alsohighly
decrease power losses in any associated

They are particularly suitable in motor control
circuitries, or in the primaryof SMPS as snubber,
clampingor demagnetizingdiodes. They are also
suitable for secondary of SMPS as high voltage

rectifierdiodes.
switchingIGBT or MOSFET in all freewheelmode
operations.

ABSOLUTE RATINGS(limitingvalues)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

FRM

I

FSM

T

stg

T

j

TURBOSWITCH is a trademark of STMicroelectronics

November 1999 - Ed:5B

Repetitivepeakreverse voltage 1200 V
RMS forward current 30 A
Repetitivepeakforward current tp = 5 µs F= 5kHzsquare 160 A
Surge non repetitive forward current tp = 10ms sinusoidal 100 A
Storagetemperaturerange - 65 to +150 °C
Maximumoperatingjunction temperature 150 °C

1/8

STTA1212D

THERMALAND POWERDATA

Symbol Parameter Test conditions Value Unit

R

th(j-c)

P

1

Junctionto case thermalresistance 1.9 °C/W
Conductionpowerdissipation I

=12Aδ=0.5

F(AV)

29.2 W

Tc= 95°C

P

max

Total power dissipation

Tc= 89°C 32.1 W

Pmax= P1+ P3 (P3 = 10%P1)

STATICELECTRICAL CHARACTERISTICS

Symbol Parameter Test conditions Min Typ Max Unit

V

I

R**

F*

Forwardvoltagedrop IF=12A Tj = 25°C

Reverseleakage current VR=0.8x

V

RRM

Vto Thresholdvoltage Ip <3.I

Tj = 125°C 1.35
Tj=25°C

Tj = 125°C 0.8
Tj = 125°C 1.57 V

F(AV)

2.2

2.0

100

5.0

Rd Dynamicresistance 36 m

Test pulses : * tp = 380 µs, δ <2%

** tp= 5ms ,δ<2%

Toevaluatethe maximum conductionlossesuse the followingequation :
P=V

toxIF(AV)

+RdxI

F2(RMS)

DYNAMICELECTRICAL CHARACTERISTICS

V
V

µ

mA

A

Ω

TURN-OFF SWITCHING

Symbol Parameter Testconditions Min Typ Max Unit

S

t

rr

I

RM

factor

Reverserecovery
time

Maximumreverse
recoverycurrent

Tj = 25°C
I

=0.5 A IR= 1A Irr = 0.25A

F

=1A dIF/dt=-50A/µsVR=30V

I

F

Tj = 125°C VR= 600V IF=12A

/dt= -96A/µs

dI

F

dI

/dt= -500A/µs30

F

Softnessfactor Tj = 125°CVR=600V IF=12A

dI

/dt= -500A/µs 1.2

F

50

100

18

TURN-ON SWITCHING

Symbol Parameter Testconditions Min Typ Max Unit

t

fr

V

Fp

Forwardrecoverytime Tj = 25°C

=12A, dIF/dt = 96 A/µs

I

F

measuredat 1.1 × V

Peakforwardvoltage Tj = 25°C

=12A,dIF/dt = 96 A/µs

I

F

I

=40A,dIF/dt = 500A/µs40

F

max

F

900

30

ns

A

/

ns

V

2/8

STTA1212D

Fig.1: Conductionlosses versusaveragecurrent.

P1(W)

30

δ = 0.1

δ= 0.5δ = 0.2

25
20

δ =1

15
10

5

IF(av) (A)

0

0 2 4 6 8 10 12 14

Fig. 3: Relative variation of thermal impedance
junctionto case versuspulse duration.

Zth(j-c)/Rth(j-c)

1.0

0.8

0.6

δ = 0.5

0.4

δ = 0.2

0.2

δ = 0.1

0.0

Single pulse

1E-4 1E-3 1E-2 1E-1 1E+0

tp(s)

Fig. 2: Forward voltage drop versus forward cur-

rent(maximumvalues).

IFM(A)

100.0

Tj=125°C

10.0

1.0

VFM(V)

0.1

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Fig. 4: Peak reverse recovery current versus

dI

/dt(90% confidence).

F

IRM(A)

50

VR=600V
Tj=125°C

40

30

IF=2*IF(av)

20

10

dIF/dt(A/µs)

0

0 100 200 300 400 500

IF=IF(av)

IF=0.5*IF(av)

Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence).

trr(ns)

500
450
400
350

IF=2*IF(av)

300
250
200
150
100

50

0

0 100 200 300 400 500

dIF/dt(A/µs)

IF=0.5*IF(av)

VR=600V
Tj=125°C

IF=IF(av)

Fig.6: Softnessfactor (tb/ta) versusdIF/dt(typical

values).

S factor

1.40

IF<2*IF(av)

1.20

1.00

dIF/dt(A/µs)

0.80
0 100 200 300 400 500

VR=600V
Tj=125°C

3/8