SGS Thomson Microelectronics STPS3L25S Datasheet
®
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTIC S
STPS3L25S
I
F(AV)
V
RRM
3 A
25 V
Tj (max) 150° C
(max) 0.44 V
V
F
FEATURES AND BENEFITS
VERY LOW F O RW ARD VOLTAG E DROP FOR
LESS POWER DISSIPATION
OPTIMIZED CONDUCTION/REVERSE LOSSES
TRADE-OFF WHICH MEANS THE HIGHEST
EFFICIENCY IN THE APPLICATIONS
HIGH POWER SURFACE MOUNT MINIATURE
PACKAGE
DESCR IPTION
Single Schottky rectifier suited t o Switched Mode
Power Supplies and high frequency DC to DC converters.
Packaged in SMC, this device is especially intended for use as an antiparallel diode on synchronous rectification freewheel MOSFET’s at the
secondary of 3.3V SMP S and DC/ DC units.
ABSOLUTE RATINGS
(limiting values)
SMC
JEDEC DO-214AB
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
T
stg
Tj Maximum operating junction temperature * 150
Repetitive peak reverse voltage 25 V
RMS forward current 10 A
Average forward current TL = 115°C
δ
= 0.5 3 A
Surge non repetitive forward current tp = 10 ms Sinusoidal 75 A
Repetitive peak reverse current tp= 2 µs square F=1kHz 1 A
Non repetitive peak reverse current tp = 100 µs square 1 A
Storage temperature range - 65 to + 150
°
°
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
* :
June 1999 - Ed: 3A
dTj
<
1
Rth(j−a
thermal runaway condition for a diode on its own heatsink
)
C
C
1/4
STPS3L25S
THERMAL RESISTANCES
Symbol Parameter Value Un it
R
th(j-l)
Junction to lead 20
STATIC ELECTRICAL CHARACTE RISTICS
Symbol Tests Conditions Tests Conditions Min. Typ. Max. Unit
* Reverse leakage current Tj = 25°CV
I
R
= V
R
RRM
90
Tj = 125°C1530mA
* Forward voltage drop Tj = 25°CI
V
F
= 3 A 0.49 V
F
Tj = 125°C0.370.44
Tj = 25°CI
= 6 A 0.6
F
Tj = 125°C 0.5 0.58
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.3 x I
+ 0.047 I
F(AV)
F2(RMS)
°
C/W
µ
A
Fig. 1:
Average forward power dissipation versus
average forward current.
PF(av)(W)
2.2
2.0
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
1.8
1.6
1.4
δ = 1
1.2
1.0
0.8
0.6
T
0.4
0.2
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Fig. 3:
Non repetitive surge peak forward current
IF(av) (A)
δ
=tp/T
tp
versus overload duration (maximum values).
IM(A)
14
12
10
8
6
4
I
M
2
0
1E-3 1E-2 1E-1 1E+0
t
δ
=0.5
t(s)
Ta=25°C
Ta=50°C
Ta=100°C
Fig. 2:
Average forward current versus ambient
temperature (δ=0.5).
IF(av)(A)
3.5
3.0
Rth(j-a)=Rth(j-l)
2.5
2.0
Rth(j-a)=90°C/W
1.5
1.0
0.5
0.0
0 25 50 75 100 125 150
Fig. 4:
T
δ
=tp/T
tp
T amb(°C)
Relative variation of thermal impedance
junction to ambient versus puls e dur ation.
Zth(j-a)/Rth(j-a)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
0.0
1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Single pulse
tp(s)
δ
=tp/T
T
tp
2/4
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