SGS Thomson Microelectronics STB10NC50 Datasheet
STB10NC50-1
N - CHANNEL 500V - 0.48Ω - 10A - I2PAK/D2PAK
PowerMESH MOSFET
PRELIMINARY DATA
■ TYPICALR
DS(on)
= 0.48 Ω
■ EXTREMELYHIGH dv/dt CAPABILITY
■ 100%AVALANCHETESTED
■ VERYLOW INTRINSIC CAPACITANCES
■ GATECHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
■ HIGHCURRENT, HIGH SPEEDSWITCHING
■ SWITCHMODE POWER SUPPLIES(SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
INTERNAL SCHEMATIC DIAGRAM
December 1999
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
Drain-sour ce Voltage (VGS=0) 500 V
V
DGR
Drain- ga t e V oltage (RGS=20kΩ)
500 V
V
GS
Gate-sourc e Voltage ± 30 V
I
D
Drain C urrent (con tinuous) at Tc=25oC10A
I
D
Drain C urrent (con tinuous) at Tc= 100oC6.3A
I
DM
(•) Drain C urrent (puls ed ) 40 A
P
tot
Total Dissipation at Tc=25oC135W
Derating Factor 1.08 W/
o
C
dv/ dt(
1) Peak Diod e Rec o very volt ag e slope 3 V/ns
T
stg
Sto rage T e m pe r ature -65 to 1 50
o
C
T
j
Max. O pe rating Junc t ion Temp eratur e 150
o
C
(•) Pulse width limited by safe operating area (1)ISD≤ 10 A, di/dt ≤100 A/µs,VDD≤ V
(BR)DSS
,Tj≤T
JMAX
I2PAK D2PAK
1
3
TYPE V
DSS
R
DS(on)
I
D
ST B10NC50-1 500 V < 0.52 Ω 10 A
1/7
THERMAL DATA
R
thj-case
Ther mal Resis t an ce Junc ti on-cas e Max 0.93
o
C/W
R
thj-amb
R
thc-sink
T
l
Ther mal Resis t an ce Junc ti on-ambien t Max
Thermal Resistance Case-sink Typ
Maximum Le ad Temper at u re F or Sold er ing P ur p os e
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol Para meter Max Val ue Uni t
I
AR
Avalanche Cu r rent, Repetitive or Not -R e petitive
(pulse width limite d by T
j
max)
10 A
E
AS
Single Pu lse Avalanche Energy
(starting T
j
=25oC, ID=IAR,VDD=50V)
550 mJ
ELECTRICAL CHARACTERISTICS (T
case
=25oC unless otherwisespecified)
OFF
Symbol Parameter Test Con ditions Min. Typ. M ax. Unit
V
(BR)DSS
Drain-sourc e
Break d own Voltage
I
D
=250µAVGS=0
500 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
=0)
V
DS
=MaxRating
V
DS
= Max Rating Tc=125oC
1
50
µA
µ
A
I
GSS
Gat e- b ody Leakage
Current (V
DS
=0)
V
GS
= ± 30 V
± 100 nA
ON(∗)
Symbol Parameter Test Con ditions Min. Typ. M ax. Unit
V
GS(th)
Gate Threshold
Voltage
V
DS=VGSID
= 250 µA
234V
R
DS(on)
Static Drain-source On
Resistanc e
VGS=10V ID= 5 A 0.48 0.52 Ω
I
D(on)
On State Drain Cu r rent VDS>I
D(on)xRDS(on)max
VGS=10V
10 A
DYNAMIC
Symbol Parameter Test Con ditions Min. Typ. M ax. Unit
g
fs
(∗)Forward
Tr ansconduc tance
VDS>I
D(on)xRDS(on)maxID
=5 A 10 S
C
iss
C
oss
C
rss
Input Capacit ance
Out put Ca pacita nce
Reverse T ransfer
Capacitance
VDS=25V f=1MHz VGS= 0 1480
210
25
pF
pF
pF
STB10NC50-1
2/7
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Con ditions Min. Typ. M ax. Unit
t
d(on)
t
r
Turn-on Time
Rise Tim e
VDD= 250 V ID=5A
R
G
=4.7
Ω
VGS=10V
29
16
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gat e- Source Charge
Gate-Drain Charg e
VDD= 160 V ID=10A VGS=10V 41
12
19
49 nC
nC
nC
SWITCHINGOFF
Symbol Parameter Test Con ditions Min. Typ. M ax. Unit
t
r(Voff)
t
f
t
c
Off -voltage Rise Time
Fall Time
Cross-ov er T ime
VDD= 160 V ID=10A
R
G
=4.7 ΩVGS=10V
16
18
29
ns
ns
ns
SOURCEDRAINDIODE
Symbol Parameter Test Con ditions Min. Typ. M ax. Unit
I
SD
I
SDM
(•)
Source-drain C urrent
Source-drain C urrent
(pulsed)
10.6
42.4
A
A
V
SD
(∗) Forwar d O n V oltage ISD=10 A VGS=0 1.6 V
t
rr
Q
rr
I
RRM
Reverse Recover y
Time
Reverse Recover y
Charge
Reverse Recover y
Current
I
SD
=10 A d i/ dt = 100 A/µs
V
DD
=50V Tj= 150oC
560
4.9
17.5
ns
nC
A
(∗) Pulsed:Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operatingarea
STB10NC50-1
3/7
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