SGS Thomson Microelectronics STB10NB50 Datasheet
STB10NB50
N - CHANNEL 500V - 0.55Ω - 10.6A - D2PAK
PowerMESH MOSFET
TYPE V
DSS
R
DS(on )
I
D
STB10NB5 0 500 V < 0.60 Ω 10.6 A
■ TYPICALR
■ EXTREMELYHIGH dv/dtCAPABILITY
■ 100%AVALANCHETESTED
■ VERYLOW INTRINSIC CAPACITANCES
■ GATECHARGE MINIMIZED
■ ADDSUFFIX ”T4” FORORDERING IN TAPE
DS(on)
= 0.55 Ω
& REEL
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
■ HIGHCURRENT, HIGH SPEED SWITCHING
■ SWITCHMODE POWER SUPPLIES(SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
3
1
D2PAK
TO-263
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/ dt(
T
(•) Pulse width limited by safe operating area (1)ISD≤ 10.6A, di/dt ≤
March 1999
Drain-source Voltage (VGS=0) 500 V
DS
Dra in- gate Voltage (RGS=20kΩ)
DGR
Gate -source Voltage
GS
Dra in Cur rent (continuous) at Tc=25oC10.6A
I
D
Dra in Cur rent (continuous) at Tc= 100oC6.4A
I
D
500 V
30 V
±
(•) Dra in Cur rent (pulsed) 42.4 A
Tot al D is s ipation at Tc=25oC135W
tot
Der at ing Factor 1.08 W/
) P eak Diod e Recovery voltag e slope 4.5 V/ ns
1
St orage T e m pe rat ure -65 t o 150
stg
Max. Op erat ing Junct ion Temp e ra t ure 150
T
j
200
Α/µs, VDD≤ V
(BR)DSS
,Tj≤T
JMAX
o
C
o
C
o
C
1/8
STB10NB50
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Para meter Max Val ue Un i t
I
AR
E
Ther mal Resis t an ce Junc ti on-cas e Max 0.9
Ther mal Resis t an ce Junc ti on-ambien t Max
Thermal Resistance Case-sink Typ
Maximum Lead Tem peratu re Fo r Sold er ing Pur p os e
l
Avalanche Cur rent, Repetit iv e or Not - Re petitiv e
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
62.5
0.5
300
10.6 A
550 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
(BR)DSS
Drain-sourc e
=250µAVGS=0
I
D
500 V
Break d own V o lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Cu rr ent (V
GS
Gat e- b ody Le aka ge
Current (V
DS
=0)
=0)
V
=MaxRating
DS
= Max Rating Tc=125oC
V
DS
= ± 30 V
V
GS
1
50
± 100 nA
ON(∗)
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
GS(th)
Gate Threshold
V
DS=VGSID
= 250 µA
345V
Voltage
R
DS(on)
Static Drain-source O n
VGS=10V ID= 5 .3 A 0.55 0.60 Ω
Resistanc e
I
D(on)
On S t ate Dra in Curr ent VDS>I
D(on)xRDS(on)max
10.6 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
g
(∗)Forward
fs
Tr ansconduc tance
C
C
C
Input Cap ac i t an c e
iss
Out put Capacita nce
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=5.3 A 5 8 S
VDS=25V f=1MHz VGS= 0 1480
210
25
µA
µ
pF
pF
pF
A
2/8
STB10NB50
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
VDD= 250 V ID=5.3A
=4.7 Ω VGS=10V
R
G
25
13
(see test circuit, figure 3)
Q
Q
Q
Total Gate Charge
g
Gat e- Source Cha rge
gs
Gate-Drain Charge
gd
VDD= 160 V ID=10A VGS=10V 38
10
17
49 nC
SWITCHINGOFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
t
r(Voff)
t
t
Off -voltage Rise Time
Fall Time
f
Cross-ov er Time
c
VDD= 160 V ID=10A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
13
15
25
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Source-drain Curr ent
(•)
Source-drain Curr ent
10.6
42.4
(pulsed)
(∗) F orwar d On V oltage ISD=10.6 A VGS=0 1.6 V
Reverse Recov er y
rr
Time
Reverse Recov er y
rr
=10.6 A di/dt = 100 A/µs
I
SD
=50V Tj= 150oC
V
DD
(see test circuit, figure 5)
560
4.9
Charge
Reverse Recov er y
17.5
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
nC
A
SafeOperating Area ThermalImpedance
3/8
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