SGS Thomson Microelectronics STB10NB20 Datasheet
STB10NB20
N - CHANNEL200V - 0.30Ω - 10A - D2PAK
PowerMESH MOSFET
TYPE V
DSS
R
DS(on)
I
D
ST B10NB20 200 V < 0.40 Ω 10 A
■ TYPICALR
■ EXTREMELYHIGH dv/dt CAPABILITY
■ 100%AVALANCHETESTED
■ VERYLOW INTRINSIC CAPACITANCES
■ GATECHARGE MINIMIZED
■ FORTHROUGH-HOLE VERSIONCONTACT
DS(on)
= 0.30 Ω
SALESOFFICE
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronis has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
■ HIGHCURRENT, HIGH SPEEDSWITCHING
■ SWITCHMODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENTANDUNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
3
1
D2PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
I
DM
P
dv/dt(
T
(•) Pulse width limited by safe operatingarea (1)ISD≤ 10A, di/dt ≤ 300A/µs,VDD≤ V
November 1998
Drain-source V o lt age (VGS=0) 200 V
DS
Drain- gate Vol ta ge (RGS=20kΩ)200V
DGR
Gate-s ource Voltage ± 30 V
GS
I
Drain Curr ent (c ont i nuous) at Tc=25oC10A
D
I
Drain Curr ent (c ont i nuous) at Tc= 100oC6A
D
(•) Drain Current ( pulsed) 40 A
Total Dissipation at Tc=25oC85W
tot
Derating Fact or 0.68 W/
1) Peak D iode Recove r y vo lt age s lope 5.5 V/ ns
St orage Temperature -65 to 150
stg
T
Max. O per ating Jun ct ion Temp erat ure 150
j
,Tj≤T
(BR)DSS
JMAX
o
C
o
C
o
C
1/8
STB10NB20
THERMAL DATA
R
thj-case
Rthj-a mb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambie nt Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Te m pe ra t ure For Soldering Purpos e
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single P ul se Avalanche E ner gy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
1.47
62.5
0.5
300
10 A
150 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 200 V
Break dow n Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Cur re nt ( V
GS
Gat e- bod y L eakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
V
=± 30 V
GS
1
10
100 nA
±
ON (∗)
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID= 250 µA 345V
Sta t ic Drain -s ource On
VGS=10V ID= 5 A 0.30 0.40
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
10 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capac i t ance
iss
Out put Capacitance
oss
Reverse Tr ansfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=5 A 3 4 S
VDS=25V f=1MHz VGS= 0 470
135
22
650
190
30
µ
µA
Ω
pF
pF
pF
A
2/8
STB10NB20
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
t
d(on)
t
r
Turn-on Time
Rise Ti me
VDD=100V ID=5A
R
=4.7
G
Ω
VGS=10V
10
15
14
20
(see test circuit, figure 3)
Q
Q
Q
Tot al Gat e Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD= 160 V ID=10A VGS=10V 17
7.5
5.5
24 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
t
r(Voff)
t
t
Off-voltage Rise T ime
Fall T ime
f
Cross-over Time
c
VDD=160V ID=10A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
10
20
8
11
14
28
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed:Pulse duration= 300µs, duty cycle 1.5%
(•) Pulse width limited by safe operatingarea
Source-drain Current
(•)
Source-drain Current
10
40
(pulsed)
(∗)ForwardOnVoltage ISD=10 A VGS=0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD=10 A di/dt = 10 0 A/µs
=50V Tj= 150oC
V
DD
(see test circuit, figure 5)
170
980
Charge
Reverse Recovery
11.5
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
nC
A
SafeOperating Area ThermalImpedance
3/8
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