SGS Thomson Microelectronics STB100NH02L Datasheet
STB100NH02L
N-CHANNEL 24V - 0.0052 Ω - 60A D²PAK
STripFET™ III POWER MOSFET
TYPE
V
DSS
STB100NH02L 24 V < 0.006
■ TYPICAL R
■ TYPICAL R
■ R
DS(ON)
■ CONDUCTION LOSSES REDUCED
■ SWITCHING LOSSES REDUCED
■ LOW THRESHOLD DEVICE
■ SURFACE-MOUNTING D
(on) = 0.0052 Ω @ 10 V
DS
(on) = 0.007 Ω @ 5 V
DS
* Qg INDUSTRY’s BENCHMARK
R
DS(on)
Ω
2
PAK (TO-263)
I
60 A
D
(2)
POWER PACKAG E IN TU BE (NO SU FFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
The STB100 NH02L utilizes the latest advanced desi gn
rules of ST’s proprieta ry STripFET™ technology. This is
suitable fot the most demanding DC-DC converter
applications where high efficiency is to be achieved.
APPLICATIONS
■ SPECIFICALL Y D ESIGNED AND OP TIMISED
FOR HIGH EFFICIENCY DC/DC
CONVERTERS
3
1
D²PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
spike(1)
V
V
V
I
D
I
D
I
DM
P
E
AS
T
DS
DGR
GS
(2)
(2)
(3)
tot
stg
T
j
Drain-source Voltage Rating 30 V
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
24 V
24 V
Gate- source Voltage ± 20 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
60 A
60 A
Drain Current (pulsed) 240 A
Total Dissipation at TC = 25°C
100 W
Derating Factor 0.67 W/°C
(4)
Single Pulse Avalanche Energy 600 mJ
Storage Temperature
Max. Operating Junction Temperature
-55 to 175 °C
1/11September 2003
STB100NH02L
THERMA L D ATA
Rthj-case
Rthj-amb
T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
l
Max
Max
1.5
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 25 mA, VGS = 0
V
(BR)DSS
Drain-source
I
D
24 V
Breakdown Voltage
= 20 V
V
DS
V
= 20 V TC = 125°C
DS
V
= ± 20 V
GS
1
10
±100 nA
ON
(5)
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
= VGS I
DS
= 10 V ID = 30 A
V
GS
V
= 5 V ID = 15 A
GS
= 250 µA
D
1 1.8 V
0.0052
0.007
0.006
0.011
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(5)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 10 V ID= 30 A
DS
= 15V f = 1 MHz VGS = 0
V
DS
40 S
2850
800
120
µA
µA
Ω
Ω
pF
pF
pF
2/11
R
G
Gate Input Resistance
f=1 MHz Gate DC Bias=0
Test Signal Level =20 mV
1
Ω
Open Drain
STB100NH02L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 10 V ID =30 A
t
d(on)
t
Turn-on Delay Time
r
Rise Time
V
DD
R
= 4.7 Ω VGS = 10 V
G
(Resistive Load, Figure 3)
Q
Q
gs
Q
gd
Total Gate Charge
g
Gate-Source Charge
Gate-Drain Charge
=10 V ID=60 A VGS=10 V
V
DD
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 10 V ID = 30 A
t
d(off)
t
Turn-off Delay Time
f
Fall Time
V
DD
R
= 4.7Ω, V
G
GS
= 10 V
(Resistive Load, Figure 3)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(1)
Garanted wh en external Rg=4.7 Ω and tf < t
2
(
) Value limited by wire bonding
(3)
Pulse width limited by safe operating area.
4
(
) Starting Tj = 25 oC, ID = 30A, VDD = 15V
Source-drain Current
Source-drain Current (pulsed)
(5)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
= 30 A VGS = 0
SD
= 60 A di/dt = 100A/µs
I
SD
V
= 16 V Tj = 150°C
DD
(see test circuit, Figure 5)
.
fmax
(5)
Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.
(6)
Q
oss = Coss
(7)
Gate charge for synchronous operation
*∆ V
in , Coss = Cgd + Cds .
13
75
47.5
10
7
50
18 24.3
35
35
2
See Appendix A
64 nC
60
240
1.3 V
ns
ns
nC
nC
ns
ns
A
A
ns
nC
A
Safe Operating Area Thermal Impedance
3/11
STB100NH02L
Output Characteristics Transfer Characteristics
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
4/11
Loading...