SGS Thomson Microelectronics START450, START450TR Datasheet
• COMPRESSI ON POIN T P1dB=19dB m @ 1.8G Hz
• TRANS I TI ON FR E QU E NC Y 42 GHz
• HIGH LINEARITY
• ULTRA MINIATURE SOT343(SC70) PACKAGE
START450
NPN Silicon RF Transistor
SOT343 (SC70)
ORDER CODE
START450TR
BRANDING
450
DESCRIPTION
The START450 is a member of the START family that
provide the state of the art of RF silicon process to the
market. Manufacturated in the third gen eration of ST
proprietary bipolar process, it offers the best mix of
gain and NF for given breakdown voltage(BVceo).
It offers performance level only archived with GaAs
products before.
APPLICATIONS
• LNA FOR GSM/DCS, DECT, PCS, PCN,
CDMA, W-CDMA
• PREDRIVER FOR DECT
• GENERAL PURPOSE 500MHz-5GHz
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
ceo
V
cbo
V
ebo
I
c
I
b
P
tot
T
stg
T
j
Collector emitter voltage 4.5 V
Collector base voltage 15 V
Emitter base voltage 1.5 V
Collector current 100 mA
Base current 10 mA
Total dissipation, Ts = TBD
Storage temperature -65 to 150
Max. operating junction temperature 150
450 mW
o
C
o
C
ABSOLUTE MAXIMUM RATINGS
R
thjs
Thermal Resistance Junction soldering point MAX ≤ 120
o
C/W
1/7November, 20 2002
START450
w
ELECTRICAL CHARACTERISTICS (Tj=25 oC,unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
cbo
I
ebo
Hfe DC current gain Ic = 50mA, Vce = 4V 160
NFmin Minimim noise figure
Ga NFmin associated gain Ic = 10mA, Vce = 2V, f = 1.8GHz 13 dB
|S21|
Gms
P
-1dB
OIP3
Note(1) : Gm s = | S21 / S12 |
Collector cutoff current Vcb = 5V, Ie = 0A 150 nA
Emitter-base cutoff
current
2
(1)
Insertion power gain Ic = 50mA, Vce = 2V, f = 1.8GHz 13.7 dB
Maximum stable gain Ic = 50mA, Vce = 2V, f = 1.8GHz 19.1 dB
1dB compression point Ic = 50mA,Vce = 3V, f = 1.8GHz 19 dBm
Ouput third order
intercept point
Veb = 1.5V, Ic = 0A 15 µA
Ic = 10mA, Vce = 2V, f = 1.8GHz,
Ic = 50mA,Vce = 3V, f = 1.8GHz 29 dBm
Z
s
= Zsopt
1.2 dB
PINOUT
4
12
SOT343
PIN CONNECTION
3
Top vie
Pin No. Description
1 BASE
3 COLLECTOR
2,4 EMITTER
2/7
SPICE PARAMETERS (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax)
TRANSISTOR CHIP DATA
Symbol Value Symbol Value Symbol Value
TMEAS 27.0 FC 0.8 XJBC 0.3
IS 1.9E-16 EG 1.12 XTI 4.51
ISE 1.9E-12 NF 1 BF 295
NR 1 NE 2.658 VAF 40
ISC 3.19E-15 BR 13.7 VAR 2.5
o
IKF
TR 7E-10 PTF 35 VTF 27
XTF 20 ITF 4.8 MJE 0.44
RB 2.7 RBM 0.64 MJC 0.31
RC 1.38 RE 0.15 MJS 0.281
CJE 1462E-15 VJE 1.1 IKR 43.5E-3
CJC 660E-15 VJC 0.84 XTB -0.32
CJS 425E-15 VJS 0.453
{1.448*((T(
C)+273.15)/
300.15)^(-1.6)}
NC 1.5 TF 3.1E-12
PACKAGE EQUIVALENT CIRCUIT
C2
C2
C=21 fF
C=21 fF
START450
L4
.
.
B .
B .
L4
L=0.3 nH
L=0.3 nH
B’ C’
B’ C’
L3 L5 L6
L3 L5 L6
L=0.8 nH
L=0.8 nH
C1
C1
Transistor
Transistor
Chip
Chip
E’
E’
L=0.15 nH
L=0.15 nH
L1
L1
.
.
L=0.05 nHL2
L=0.05 nHL2
.
.
E
E
..
L=0.1 nH L=0.3 nH
L=0.1 nH L=0.3 nH
C3
C3
C=785 fFC=740 fF
C=785 fFC=740 fF
..
C
C
In order to avoid high complexity of the package equivalent circuit, the two emitter leads of SOT-343
package are combined in one electrical connection.
FOR MORE ACCURACY SIMULATION IN SATURATION REGION :
Adding the 5 Spice parameters showed in Table A and using ST Spice Library (available on request) you
can achieve a more accuracy simulation in t he saturation region. ST Spice library is compatible with
following simulators: ELDO MENTOR (any version), SPECTRE CADENCE (any version), ADS (version
2001 only).
Table A (Spice Parameters extracted in saturation region)
RW Vjj ENP VRP RP
2.594 0.769 2.45 {4.64*((TEMPER+273.15)/300.15)^(1.5)} 1.00E-6
3/7
Loading...