SGS Thomson Microelectronics START405TR, START405 Datasheet
• LOW NOISE FIGURE: NFmin = 1.1dB
@ 1.8GHz, 2mA, 2V
• COMPRESSION P1dB = 5dBm
@ 1.8GHz, 5mA, 2V
• TRANS I TI ON FR E QU E NC Y 42 GHz
• LOW CURRENT CONSUMPTION
• ULTRA MINIATURE SOT343 PACKAGE
START405
NPN Silicon RF Transistor
SOT343 (SC70)
ORDER CODE
START405TR
BRANDING
405
DESCRIPTION
The START405 is a member of the START family
that provide the state of the art of RF silicon process
APPLICATIONS
to the market. Manufacturated in the third
generation of ST proprietary bipolar process, it
offers the best mix of gain and NF for given
breakdown voltage(BVceo).
• LNA FOR GSM/DCS, DECT, PCS, PCN,
CDMA, W-CDMA
• GENERAL PURPOSE 500MHz-5GHz
It offers performance level only archi ve d with G aAs
products before.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
ceo
V
cbo
V
ebo
I
c
I
b
P
tot
T
stg
T
j
Collector emitter voltage 4.5 V
Collector base voltage 15 V
Emitter base voltage 1.5 V
Collector current 10 mA
Base current 1 mA
Total dissipation, Ts = TBD
Storage temperature -65 to 150
Max. operating junction temperature 150
45 mW
o
C
o
C
ABSOLUTE MAXIMUM RATINGS
R
thjs
Thermal Resistance Junction soldering point 270
o
C/W
1/7July, 3 2002
START405
w
ELECTRICAL CHARACTERISTICS (Tj=25 oC,unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
cbo
I
ebo
Hfe DC current gain Ic = 5mA, Vce = 4V 160
NFmin Minimim noise figure Ic = 2mA, Vce = 2V, f = 1.8GHz 1.1 dB
Ga NFmin associated gain Ic = 2mA, Vce = 2V, f = 1.8GHz 19 dB
|S21|
Gms
P
-1dB
OIP3
Note(1): Gms = | S21 / S12 |
PINOUT
Collector cutoff current Vcb =5V, Ie = 0A 150 nA
Emitter-base cutoff
current
2
(1)
Insertion power gain Ic = 5mA, Vce = 2V, f = 1.8GHz 17.4 dB
Maximum stable gain Ic = 5mA, Vce = 2V, f = 1.8GHz 24.2 dB
1dB compression point Ic = 5mA,Vce = 2V, f = 1.8GHz 5 dBm
Ouput third order
intercept point
4
3
Top vie
12
SOT343
Veb = 1.5V, Ic = 0A 15 µA
Ic = 5mA,Vce = 2V, f = 1.8GHz 15 dBm
PIN CONNECTION
Pin No. Description
1BASE
3 COLLECTOR
2,4 EMITTER
2/7
SPICE PARAMETERS (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax)
TRANSISTOR CHIP DATA
Symbol Value Symbol Value Symbol Value
TMEAS 27.0 FC 0.5 XJBC 0.3
IS 1.9E-17 EG 1.12 XTI 3.57
ISE 1.58E-13 NF 1 BF 340
NR 1 NE 2.711 VAF 79
ISC 7.40E-17 BR 8.59 VAR 2.35
o
IKF
TR 7E-10 PTF 38 VTF 14.7
XTF 42 ITF 0.42 MJE 0.414
RB 34.07 RBM 6.1 MJC 0.266
RC 7.9 RE 1.25 MJS 0.22
CJE 111E-15 VJE 1.1 IKR 2.29E-3
CJC 53E-15 VJC 0.69 XTB -0.744
CJS 33E-15 VJS 0.4
PACKAGE EQUIVALENT CIRCUIT
{0.151*((T(
300.15)^(-1.774)}
C)+273.15)/
NC 1.312 TF 4.1E-12
C2
C2
C=5 fF
C=5 fF
START405
L4
.
.
B .
B .
In order to avoid high complexity of the package equivalent circuit, the two emitter leads of SOT-343
package are combined in one electrical connection.
FOR MORE ACCURACY SIMULATION IN SATURATION REGION :
Adding the 5 Spice parameters showed in Table A and using ST Spice Library (available on request) you
can achieve a more accu racy simulation in the saturation region. ST Spice library is compa tible with
following simulators: ELDO MENTOR (any version), SPECTRE CADENCE (any version), ADS (version
2001 only).
Table A (Spice Parameters extracted in saturation region)
RW Vjj ENP VRP RP
L4
L=0.6 nH
L=0.6 nH
B’ C’
B’ C’
L3 L5 L6
L3 L5 L6
L=0.35 nH
L=0.35 nH
C1
C1
Transistor
Transistor
Chip
Chip
E’
E’
L=0.3 nH
L=0.3 nH
L1
L1
.
.
L=0.15 nHL2
L=0.15 nHL2
.
.
E
E
..
L=0.3 nH L=0.6 nH
L=0.3 nH L=0.6 nH
C3
C3
C=30 0 fFC=430 fF
C=30 0 fFC=430 fF
..
C
C
2.594 0.769 2.045 {8.67*((TEMPER+273.15)/300.15)^(0.839)} 1.00E-6
3/7
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