8 Kbit Serial SPI EEPROM with Positive Clock Strobe
1 MILLION ERASE/WRITE CYCLES
40 YEARS DA TA RETE NT ION
SINGLE 3V to 5.5V SUPPLY VOLTAGE
SPI BUS COMPATIBLE SERIAL INTERFACE
2 MHz CLOCK RA TE MAX
BLOCK WRITE PROTECTION
STATUS REGISTER
16 BYTE PAGE MODE
WRITE PROTECT
SELF-TIMED PROGRAMMING CY CLE
E.S.D.PROTECTION GREATER than 4000V
SUPPO RTS POSITIVE CLOCK SPI MODES
8
1
PSDIP8 (B)
0.25mm Frame
ST95P08
8
1
SO8 (M)
150mil Width
DESCRIPTION
The ST95P08 is an 8 Kbit Electrically Erasable
Programmable Memory (EEPROM) fabricated with
STMicroelectronics’s High Endurance Single
Polysilicon CMOS technology. The 8 Kbit memory
is organised as 64 pages of 16 by tes. The memory
is accessed by a simple SPI bus c ompatible serial
interface. The bus signals are a serial clock input
(C), a serial data input (D) and a serial data output
(Q). The device connected to t he bus is selected
when the chip select input (
S) goes low. Communications with the chip can be interrupted with a
hold input (
by a write protect input (
HOLD). The write operation is disabled
W).
T ab le 1. Signal Names
C Serial Clock
D Serial Data Input
Q Serial Data Output
S Chip Select
W Write Protect
Figure 1. Logic Diagram
V
CC
D
C
S
W
HOLD
ST95P08
V
SS
Q
AI01315
HOLD Hold
V
CC
V
SS
February 1999 1/16
Supply Voltage
Ground
ST95P08
Figure 2A. DIP Pin Connections
ST95P08
1
SV
2
3
W
4
SS
T ab le 2. Absolute Maximum Ratings
Symbol Parameter Value Unit
T
T
T
A
STG
LEAD
Ambient Operating Temperature
Storage Temperature –65 to 150 °C
Lead Temperature, Soldering (SO8 package) 40 sec
8
7
6
5
AI01316
CC
HOLDQ
C
DV
(1)
(2)
(PSDIP8 package) 10 sec
Figure 2B. SO Pin Connections
ST95P08
1
SV
2
3
W
SS
4
8
7
6
5
AI01317B
–40 to 85 °C
215
260
CC
HOLDQ
C
DV
°C
V
O
V
V
CC
V
ESD
Notes:
1. Except for the rating "Operating T emperature Range", stresses above those listed in the Table "Absolute Maximum Ratings"
2. Depends on range.
3. MIL-STD-883C, 3015.7 (100pF, 1500Ω)
4. EIAJ IC-121 (Condition C) (200pF , 0Ω)
SIGNALS DESCRIPTION
Serial Output (Q ).
fer data serially out of the ST95P08. Data is shifted
out on the falling edge of the serial clock.
Serial Input (D) .
data serially into the device. It receives instructions,
addresses, and data to be written. Input is latched
on the rising edge of the serial clock.
Serial Clock (C).
timing of the serial interface. Instructions, addresses, or data present at the input pin are latched
Output Voltage –0.3 to VCC +0.6 V
Input Voltage –0.3 to 6.5 V
I
Supply Voltage –0.3 to 6.5 V
Electrostatic Discharge Voltage (Human Body model)
Electrostatic Discharge Voltage (Machine model)
may cause permanent damage to the device. These are stress rating s only and operation of the device at these or any other
conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and
other relevant quality documents.
(3)
(4)
4000 V
500 V
the Q pin changes after the falling edge of the clock
The output pin is used to trans-
input.
Chip Select (
S).
This input is used to select the
ST95P08. The chip is selected by a high to low
The input pin is used to transfer
transition on the
time, the chip is deselected by a low t o high t ransition on the
S pin when C is at ’0’ state. At any
S pin when C is at ’0’ state. As soon as
the chip is deselected, the Q pin is at high impedance state. This pin allows multiple ST95P08 to
The serial clock provides the
share the same SPI bus. After power up, the chip
is at the deselect state. T r ansition of
when C is at ’1’ state.
on the rising edge of the clock input, while data on
S are ignored
2/16
ST95P08
T able 3. AC Measurement Conditions
Figure 4. AC Testing Input Output Waveforms
Input Rise and Fall Times ≤ 50ns
0.8V
0.2V
CC
CC
Input Pulse Voltages 0.2V
Input and Output Timing
Reference Voltages
Note that Output Hi-Z is defined as the point where data is no
longer driven.
T able 4. Input Parameters
(1)
(TA = 25 °C, f = 1 MHz )
0.3V
to 0.8V
CC
to 0.7V
CC
CC
CC
Symbol Parameter Min Max Unit
C
IN
C
IN
t
LPF
Note:
1. Sampled only, not 100% tested.
Input Capacitance (D) 8 pF
Input Capacitance (other pins) 6 pF
Input Signal Pulse Width 10 ns
Tabl e 5. DC Characteristics
(T
= 0 to 70°C or –40 to 85°C; VCC = 3V to 5.5V)
A
0.7V
0.3V
AI00825
CC
CC
Symbol Parameter Test Condition Min Max Unit
I
LI
I
LO
I
CC
I
CC1
V
IL
V
IH
V
OL
V
OH
Input Leakage Current 2 µA
Output Leakage Current ±2 µA
VCC Supply Current (Active)
C = 0.1 V
@ 2 MHz, Q = Open
S = VCC, VIN = VSS or VCC,
VCC Supply Current (Standby)
S = VCC, VIN = VSS or VCC,
Input Low Voltage – 0.3 0.3 V
Input High Voltage 0.7 V
Output Low Voltage IOL = 2mA 0.2 V
Output High Voltage IOH = –2mA 0.8 V
V
V
= 5.5V
CC
CC
/0.9 VCC ,
CC
= 3V
CC
CC
2mA
50 µA
10 µA
CC
V
VCC + 1 V
CC
V
V
4/16
ST95P08
Table 6. AC Characteristics
(T
= 0 to 70°C or –40 to 85°C; VCC = 3V to 5.5V)
A
Symbol Alt Parameter Test Condition Min Max Unit
f
C
t
SLCH
t
CLSH
t
CH
t
CL
t
CLCH
t
CHCL
t
DVCH
t
CHDX
t
DLDH
t
DHDL
t
HXCH
t
CLHX
t
SHSL
t
SHQZ
t
QVCL
t
CLQX
t
QLQH
t
QHQL
t
HHQX
t
HLQZ
(1)
t
W
Note:
1. Not enough characterisation data were availa ble on this parameter at the time of issue this Data Sheet. The typical value is well
below 5ms, the maximum value will be reviewed and lowered when sufficient data is available.
t
t
t
t
t
t
t
DSU
t
t
t
HSU
t
t
t
t
t
t
t
t
f
SU
SH
WH
WL
RC
FC
DH
t
HH
CS
DIS
t
HO
RO
FO
HZ
t
C
Clock Frequency D.C. 2 MHz
S Setup Time 50 ns
S Hold Time 50 ns
Clock High Time 200 ns
Clock Low Time 300 ns
Clock Rise Time 1 µs
Clock Fall Time 1 µs
Data In Setup Time 50 ns
Data In Hold Time 50 ns
RI
FI
Data In Rise Time 1 µs
Data In Fall Time 1 µs
HOLD Setup Time 50 ns
HOLD Hold Time 50 ns
S Deselect Time
4.5V < V
3V < V
< 5.5V 200 ns
CC
< 4.5V 250 ns
CC
Output Disable Time 150 ns
V
Clock Low to Output Valid 300 ns
Output Hold Time 0 ns
Output Rise Time 100 ns
Output Fall Time 100 ns
LZ
HOLD High to Output Low-Z 150 ns
HOLD Low to Output High-Z 150 ns
W
Write Cycle Time 10 ms
5/16