SGS Thomson Microelectronics ST3M01DTR, ST3M01D Datasheet
ST3M01
TRIPLE VOLTAGE REGULATOR
■ ONLY TWO CELL NEED AS INPUT
■ THREE REGULATED OUTPUT
1) HIGH EFFICENCY PFM DC/DC
CONVERTER 3.3V AT 200mA (87%
EFFICENCY)
2) VERY LOW NOISE AND VERY LOW
DROP V
(3V AT 20mA)
REG
3) VERY LOW NOISE AAND VERY LOW
DROP V
■ LOGIC CONTROLLED ELECTRONIC
(1.9 V AT 20m A)
REG
SHUTDOWN
■ LOW BATTERY DETECTOR
■ VIRTUAL GND PIN
■ TEMPERATURA RANGE: -40 TO 85°C
SO-14
SCHEMATIC DIAGRAM
Vin
On-Mode
Off-Mode
100 nF
1 KΩ
150 µF
IN_Linear
SHDN
Vref
IN_SW
15 µH
GND_SW
DC/DC
DC/DC
Ref
Ref
Lx
Linear B
-
+
OUT DC/DC
150 µF
Linear A
GND_Signal
OUT LA
1 µF
OUT LB
1 µF
Virtual GND
LBO
1/11November 2000
ST3M01
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
SHDN
V
V
LBO
V
virtua l_ GND
I
LBO
I
virtual_GND
T
T
THERMAL DATA
Symbol Parameter Value Unit
R
thj-amb
ORDER CODES
LX
stg
op
DC Input Voltage (Both IN_Linear and IN_SW)
IN
Shutdown Input Voltage -0.3 to VIN+0.3
Switch Voltage
Low Battery Output Voltage
Virtual GND Output Voltage
Low Battery Output Maximum Current
Virtual GND Output Maximum Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-ambient (*)
-0.3 to 7 V
-0.3 to 7 V
-0.3 to 7 V
-0.3 to 7 V
30 mA
30 mA
-65 to +150 °C
-40 to +85 °C
160 °C/W
V
Type Package Comment
ST3M01D SO-14 50 parts per tube / 20 tube per box
ST3M01DTR SO-14 (Tape & Reel) 2500 parts per reel
2/11
CONNECTION DIAGRAM (top view)
PIN DESCRIPTION
Pin N° Symbol Name and Function
1 GND SW Switching Ground. Must be low impedance; solder directly to GND plane
2 GND SW Switching Ground. Must be low impedance; solder directly to GND plane
3 Virtual GND Virtual GND. Open Drain N-Cnannel MOSFET: must be high impedance when the
Low Battery condition is detected.
4 LBO Low Battery Output. Open Drain N-Cnannel MOSFET: sinks current when the
input voltage drops below 2V typically.
5V
REF
Reference Voltage Output. Bypass with 0.1 µF to improve the linears V
thermal noise performance
.
6 IN Linear Linear Input. Must be connected togheter with IN SW to the input supply.
7OUT L
8 SHDN
Linear B Output port. 1.9V typically.
B
Shutdown Input. Disables the SMPS and L
referencevoltage and the low batery comparator remain active.
9 GND Signal Signal GND. Must be connected togheter with the Switching Ground.
10 OUT L
11 OUT DC/DC DC/DC Output Port: 3.3V typically.
12 IN SW SMPS Input. Must be connected togheter with IN_Linear to the input supply.
13 LX 1.5A N-Channel Power MOSFET Drain.
14 LX 1.5A N-Channel Power MOSFET Drain.
Linear A Output port. 3V typically.
A
output, but the L
A
ST3M01
REF
, the
B
3/11
ST3M01
ELECTRICAL CHARACTERISTICS (Unless otherwise specified, please refer to the typical operating
circut of the pag 1 for the external components values and connections. Unless otherwise noted
=HIGH)
V
SHDN
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
O(DC/DC)
ν DC/DC Converter Efficency V
V
O(LA)
V
O(LB)
e
N(LA)
e
N(LB)
I
q(OFF)
I
q(OFF)
I
S(DC/DC)
I
q(LA)
I
q(LB)
V
BATT
V
BATT(HYS)
R
ON(LBO)
V
V
T
on
R
ON(V_GND)
Note 1: For VIN < 1.9V the V
Note 2: V
Operating Input Voltage 1.9 3.3 V
I
DC/DC Converter Output
Voltage (Test Circuit A)
Linear A Output Voltage
(Test Circuit A)
Linear B Output Voltage
(Test Circuit A)
Linear A Thermal Output
Noise Voltage (Note 2)
Linear B Thermal Output
Noise Voltage (Note 2)
Quiescent Current OFF
Mode DC/DC & L
OFF LB
A
ON) (Test Circuit E)
Quiescent Current OFF
Mode (DC/DC & L
OFF LB
A
ON) (Test Circuit F)
DC/DC Supply Current
2.24<VIN<3.3V; 0<I
0<I
-40 < T
I
<20mA; 0<I
O(LA)
< 85 °C
J
=2.4V; I
IN
=0mA; I
O(LA)
O(DC/DC)
=0mA; TJ = 25°C
O(LB)
2.24<VIN<3.3V; 0<I
0<I
-40 < T
<20mA; 0<I
O(LA)
< 85°C
J
2.24<VIN<3.3V; 0<I
0<I
-40 < T
VIN=2.4V; V
I
C
VIN=2.4V; V
I
C
V
T
V
T
<20mA; 0<I
O(LA)
< 85°C
J
=20mA; 10 < f < 80KHz;
O(LA)
=1µF; C
O(LA)
=20mA; 10 < f < 80KHz;
O(LB)
=1µF; C
O(LB)
=3.3V; No Load; V
IN
= 25°C
J
=1.9V; No Load; V
IN
= 25°C
J
O(DC/DC)
=0.1µF; TJ = 25°C
REF
O(DC/DC)
=0.1µF; TJ = 25°C
REF
O(DC/DC)
O(LB)
O(DC/DC)
O(LB)
O(DC/DC)
O(LB)
<200mA;
<20mA;
=100mA;
<200mA;
<20mA;
<200mA;
<20mA;
=3.5V;
=3.5V;
=LOW;
SHDN
=HIGH;
SHDN
VIN=2.24V; No Load; TJ = 25°C 100 µA
3.2 3.3 3.415 V
87 %
2.93 3 3.09 V
1.86 1.9 1.955 V
60 µV
35 µV
75 µA
50 µA
(Test Circuit B)
Linear A Quiescent Current
(Test Circuit C)
Linear B Quiescent Current
(Test Circuit C)
Low Battery Detection
Range
Low Battery Detection
VIN=2.24V; V
I
=10mA; TJ = 25°C
O(LA)
VIN=2.24V; V
I
=10mA; TJ = 25°C
O(LB)
V
=HIGH with falling edge 1.96 2 2.04 V
SHDN
O(DC/DC)
O(DC/DC)
=3.5V;
=3.5V;
220 µA
75 µA
150 200 mV
Hysteresys
LBO R
DSON
Control Input Logic Low VIN>2.24V; -40 < TJ < 85°C 0.4 V
ih
Control Input Logic High VIN>2.24V; -40 < TJ < 85°C 1.5 V
il
Timer On Response Time
on DC/DC
VIN=1.9V; ID=5mA; TJ = 25°C 10 Ω
VIN=2.4V; CO=100µF; TJ = 25°C
I
O(DC/DC)
V
=200mA
=from GND to V
SHDN
SHDN(MAX)
0.6 9 ms
Virtual GND RDSON VIN>2.24V; ID=5mA; TJ = 25°C 10 Ω
is out of regul ation because of under dropout con di tion
= 3.5V force for an extern al DC source t o avoid switching noise
O(DC/DC)
O(LB)
rms
rms
4/11
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