SGS Thomson Microelectronics ST2310HI Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ NEWSERIES, ENHANCHED
PERFORMANCE
■ FULLYINSULATEDPACKAGEFOREASY
MOUNTING
■ HIGH VOLTAGECAPABILITY
■ HIGH SWITCHING SPEED
■ TIGTHERhfe CONTROL
■ IMPROVEDRUGGEDNESS
APPLICATIONS:
■ HORIZONTAL DEFLECTIONFOR MONITOR
15” AND HIGH ENDTV
DESCRIPTION
The device is manufactured using Diffused
Collector technologyfor more stable operation Vs
base drive circuit variations resulting in very low
worst case dissipation.
ST2310HI
NPN POWER TRANSISTOR
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
February 2000
Collect or-Emit ter V oltage (VBE= 0) 1500 V
CES
Collect or-Emit ter V oltage (IB= 0) 600 V
CEO
Emitter-Base Vol tage (IC=0) 6 V
EBO
I
Collect or Current 10 A
C
Collect or Peak Cu rr ent (tp<5ms) 20 A
CM
Base Current 7 A
I
B
Tot al Dissipation at Tc=25oC55W
tot
Storage Temperature -65 to 150
stg
T
Max. Ope r ating Junct ion T emperature 150
j
o
C
o
C
1/6
ST2310HI
THERMAL DATA
R
thj-case
Ther mal Resist ance Junction-c a se Ma x 2.3
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Un it
I
CES
I
EBO
V
CEO(sus)
Collec t or Cut -off
Current (V
BE
=0)
Emitt er Cut -of f Curren t
=0)
(I
C
∗ Collector- Emitt er
V
= 1500 V 1 mA
CE
V
=7V 1 mA
EB
I
= 100 m A L = 25 mH 600 V
C
Sust aining V o lt age
=0)
(I
B
V
∗ Co llector-E mitter
CE(sat)
IC=7A IB=1.75A 3 V
Saturation Voltage
∗ Base-Emi tter
V
BE(sat)
IC=7A IB=1.75A 1.1 V
Saturation Voltage
∗ DC C ur rent Gain IC=1A VCE=5V
h
FE
INDUCTIV E LO AD
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle1.5 %
s
t
f
Storage Ti me
Fall Time
=7A VCE=5V 6.5
I
C
IC=6A fh=64KHz
=1.2A V
I
B(on)
=0.4µH
L
B
BB(of f)
=-2.5V
25
2.3
380
9.5
2.7
450
µs
ns
Safe Operating Area ThermalImpedance
2/6
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