SGS Thomson Microelectronics ST2009DHI Datasheet
®
HIGH VOLTAGE FAST-SWITCHING
■ NEW SERIES, ENHANCED PERFORMA NCE
■ FULLY INSULATE D PA CKA GE (U. L.
COMPLIANT) FOR EASY MOUNTING
■ INTEGRATED FREE WHEELING DIODE
■ HIGH VOLTAGE CAPABILITY
■ HIGH SWITCHING S PE ED
■ TIGTHER hfe CONTROL
■ IMPROVED RUGGEDNESS
APPLICATIONS:
■ HORIZONTAL DEFLECTION FOR COLOR
TVS
DESCRIPTION
The device is manufactured using Diffused
Collector technology for more stable operation Vs
base drive circuit variations resulting in very low
worst case dissipation.
ST2009DHI
NPN POWER TRANSISTOR
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
=35 Ω
R
BE
Typ.
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
V
T
December 2002
Collector-Base Voltage (IE = 0) 1500 V
CBO
Collector-Emitter Voltage (IB = 0) 600 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
I
Collector Current 10 A
C
Collector Peak Current (tp < 5 ms) 20 A
CM
I
Base Current 7 A
B
Total Dissipation at Tc = 25 oC55W
tot
Insulation Withstand Voltage (RMS) from All
isol
2500 V
Three Leads to External Heatsink
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
1/6
ST2009DHI
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 2.3
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
I
V
CE(sat)
CES
EBO
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 1500 V
V
CE
V
= 1500 V TC = 125 oC
CE
= 4 V 70 210 mA
V
EB
1
2
IC = 5 A IB = 1.25 A 1.5 V
Saturation Voltage
V
BE(sat)
∗ Base-Emitter
IC = 5 A IB = 1.25 A 1.2 V
Saturation Voltage
h
∗ DC Current Gain IC = 1 A VCE = 5 V
FE
V
Diode Forward Voltage IF = 5 A 1.5 2 V
F
INDUCTIVE LOAD
Storage Time
t
s
Fall Time
t
f
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
I
= 5 A VCE = 1 V
C
I
= 5.5 A VCE = 5 V 5
C
I
= 5 A I
C
= 2 µH V
L
BB(off)
f = 32 KHz
Bon(END)
= -2.5 V
BE(off)
= 1 A
20
5
2.6
0.28
9
3.2
0.55
mA
mA
µs
µs
Safe Operating Area Thermal Impedance
2/6
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