SGS Thomson Microelectronics ST2001HI Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ NEWSERIES, ENHANCHED
PERFORMANCE
■ FULLYINSULATEDPACKAGEFOREASY
MOUNTING
■ HIGH VOLTAGECAPABILITY
■ HIGH SWITCHING SPEED
■ TIGTHERhfe CONTROL
■ IMPROVEDRUGGEDNESS
APPLICATIONS:
■ HORIZONTAL DEFLECTIONFOR COLOR
TV AND MONITOR
DESCRIPTION
The ST2001HI is manufactured using Diffused
Collector technology for more stable operation
Vs base drive circuit variations resulting in very
low worstcase dissipation.
ST2001HI
NPN POWER TRANSISTOR
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
November 1999
Collect or-Base Voltage (IE= 0 ) 1500 V
CBO
Collect or-Emit ter Voltage (IB= 0 ) 600 V
CEO
Emitter-Base Vol tage (IC=0) 7 V
EBO
I
Collect or Current 10 A
C
Collect or Peak Cu rr ent (tp<5ms) 20 A
CM
Base Current 7 A
I
B
Tot al Dissipation at Tc=25oC55W
tot
Storage Temperature -65 to 150
stg
T
Max. Ope r ating Junct ion T emperature 150
j
o
C
o
C
1/6
ST2001HI
THERMAL DATA
R
thj-case
Ther mal Resistanc e Junction-case Max 2.3
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Un it
I
CES
I
EBO
V
CEO(sus)
Collec t or Cut -off
Current (V
BE
=0)
Emitt er Cut -of f Cu rrent
=0)
(I
C
∗ Collec t or- Emitt er
V
= 1500 V
CE
= 1500 V Tj=125oC
V
CE
V
=7V 1 mA
EB
I
= 10 0 m A L = 25 mH 600 V
C
1
2
Sust aining V o lt age
=0)
(I
B
∗ Collector -Emitt er
V
CE(sat)
IC=5A IB=1.25A 1.5 V
Saturation Voltage
∗ Base- Emitt er
V
BE(sat)
IC=5A IB=1.25A 1.2 V
Saturation Voltage
∗ DC Current Gain IC=6A VCE=5V 5 10
h
FE
INDUCTIV E LO AD
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle1.5 %
s
t
f
Storage Ti me
Fall Time
IC=5A I
=1 µHVBB=-2.5V
L
B
Bon(END)
f=64KHz
=1 A
2.5
0.3
3.5
0.45
mA
mA
µs
µs
Safe Operating Area Thermal Impedance
2/6
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