SGS Thomson Microelectronics ST13007N Datasheet
ST13007N
HIGH VOLTAGE FAST-SWITCHING
■ HIGH VOLTAGECAPABILITY
■ NPNTRANSISTOR
■ LOW SPREAD OF DYNAMICPARAMETERS
■ MINIMUM LOT-TO-LOT SPREADFOR
RELIABLEOPERATION
■ VERYHIGH SWITCHINGSPEED
APPLICATIONS
■ ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
■ SWITCHMODEPOWER SUPPLIES
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switchingspeeds and high voltagecapability.
They use a Cellular Emitter structure to enhance
switchingspeeds.
ST13007NFP
NPN POWER TRANSISTORS
3
2
1
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Val u e Uni t
ST1 3007 N ST 13 007NFP
V
V
V
I
I
P
T
March 1999
Collector-Emitter Voltage (VBE= -1.5V) 700 V
CEV
Collector-Emitter Voltage (IB= 0 ) 400 V
CEO
Emitter-Base Voltage (IC=0) 9 V
EBO
Collector Current 8 A
I
C
Collector Peak Current 16 A
CM
Base Current 4 A
I
B
Base Peak Curre nt 8 A
BM
tot Tot al Dissip ation at T
Sto rage T emperat ure -65 to 150
stg
Max. Oper at in g Junct ion Te mperatu re 150
T
j
≤ 25oC
c
80 33 W
o
C
o
C
1/7
ST13007N / ST13007NFP
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resist ance Junctio n-c a se Ma x
Ther mal Resist ance Junctio n-A mbient Max
TO-220 TO - 2 20FP
1.56
62.5
3.8
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Cond itions Min. Typ . Max. Unit
I
CEV
I
EBO
V
CEO(sus)
Collec t or Cut -off
Current (V
=-1.5V)
BE
Emitt er Cut-off Curren t
=0)
(I
C
∗ Co llector-Emit t er
V
=ratedV
CE
VCE=ratedV
V
=9V 1 mA
EB
CEV
CEVTc
=100oC
1
5
mA
mA
IC= 10 mA 400 V
Sust aining Voltage
∗ Collec t or-Emitter
V
CE(sat)
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
h
∗ DC Cur r ent Gain IC=2A VCE=5V
FE
INDUCTIVE LO AD
t
* Pulsed: Pulse duration = 300µs, duty cycle 2 %
Note : Productis pre-selected inDC current gain (GROUP A and GROUP B).STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
s
t
f
Storage Time
Fall Time
IC=2A IB=0.4A
=5A IB=1A
I
C
=8A IB=2A
I
C
=5A IB=1A Tc=100oC
I
C
IC=2A IB=0.4A
=5A IB=1A
I
C
=5A IB=1A Tc=100oC
I
C
Gr oup A
Gr oup B
=5A VCE=5V
I
C
IC = 5 A VCL=200V
=1A V
I
B1
=0Ω
R
BB
BEo f f
=-5V
15
26
5
0.6
60
1
2
3
3
1.2
1.6
1.5
28
40
30
1.5
110
V
V
V
V
V
V
V
µs
ns
2/7
ST13007N/ ST13007NFP
Safe OperatingAreas
DCCurrent Gain
DeratingCurve
DC Current Gain
CollectorEmitter SaturationVoltage
BaseEmitter Saturation Voltage
3/7
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