SGS Thomson Microelectronics ST13007FP Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ HIGH VOLTAGECAPABILITY
■ NPNTRANSISTOR
■ LOW SPREAD OF DYNAMICPARAMETERS
■ MINIMUM LOT-TO-LOT SPREADFOR
RELIABLEOPERATION
■ VERYHIGH SWITCHINGSPEED
■ FULLYCHARACTERIZED AT 125
■ LARGERBSOA
APPLICATIONS
■ ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
■ SWITCHMODE POWERSUPPLIES
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switchingspeeds and high voltagecapability.
They use a Cellular Emitter structure to enhance
switchingspeeds.
o
C
ST13007FP
NPN POWER TRANSISTOR
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
I
I
P
T
June 1998
Collector-Emitter Voltage (VBE= -1.5V) 700 V
CEV
Collector-Emitter Voltage (IB= 0) 400 V
CEO
Emitter-Base Voltage (IC=0) 9 V
EBO
Collect or Current 8 A
I
C
Collect or Peak C urr ent 16 A
CM
Base Current 4 A
I
B
Base P eak Current 8 A
BM
Tot al Dis sipation at Tc≤ 25oC36W
tot
Storage Tem perature -65 to 1 50
stg
Max. Operating J unc tion T emperature 150
T
j
o
C
o
C
1/6
ST13007FP
THERMAL DATA
R
thj-case
Ther mal Resistance Junct ion-cas e Max 3.47
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
CEV
I
EBO
V
CEO(sus)
Collector Cut-of f
Current (V
= -1.5V)
BE
Emit ter Cut-off Current
=0)
(I
C
∗ Co llec tor-Emitt er
V
=ratedV
CE
VCE=ratedV
V
=9V 1 mA
EB
CEV
CEVTc
=100oC
1
5
mA
mA
IC= 10 m A 400 V
Sust aining Voltag e
V
∗ Collec tor-Emitt er
CE(sat)
Saturation Voltage
V
∗ Base-Emitt er
BE(sat )
Saturation Voltage
h
∗ DC Curr ent Gain IC=2A VCE=5V
FE
INDUCTIVE LO AD
t
s
t
f
St orage Time
Fall Time
INDUCTIVE LO AD
t
* Pulsed: Pulse duration = 300µs, dutycycle 2 %
Note : Productis pre-selected inDC current gain (GROUP A and GROUP B).STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
s
tf
St orage Time
Fall Time
IC=2A IB=0.4A
=5A IB=1A
I
C
=8A IB=2A
I
C
=5A IB=1A Tc=100oC
I
C
IC=2A IB=0.4A
=5A IB=1A
I
C
=5A IB=1A Tc=100oC
I
C
Gr oup A
Gr oup B
=5A VCE=5V
I
C
IC=5A VCL= 250 V
=1A IB2=-2A
I
B1
L = 200 µH
IC=5A VCL= 250 V
=1A IB2=-2A
I
B1
L = 200 µHT
= 125oC
c
15
26
5
1.6
60
2.3
110
1
2
3
3
1.2
1.6
1.5
28
40
30
2.5
110
V
V
V
V
V
V
V
ms
ns
µs
ns
2/6
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