SGS Thomson Microelectronics ST13007 Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ IMPROVEDSPECIFICATION:
- LOWERLEAKAGECURRENT
- TIGHTER GAIN RANGE
- DCCURRENT GAIN PRESELECTION
- TIGHTER STORAGETIME RANGE
■ HIGH VOLTAGECAPABILITY
■ NPNTRANSISTOR
■ LOW SPREADOF DYNAMIC PARAMETERS
■ MINIMUM LOT-TO-LOT SPREADFOR
RELIABLEOPERATION
■ VERYHIGH SWITCHING SPEED
■ FULLYCHARACTERIZED AT 125
■ LARGERBSOA
APPLICATIONS
■ ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
■ SWITCHMODEPOWER SUPPLIES
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switchingspeedsandhigh voltagecapability.
They use a Cellular Emitter structure to enhance
switchingspeeds.
o
C
ST13007
NPN POWER TRANSISTOR
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
I
I
P
T
July 1998
Collector-Emitter Voltage (VBE= - 1 . 5V) 700 V
CEV
Collector-Emitter Voltage (IB= 0) 400 V
CEO
Emitter-Base Voltage (IC=0) 9 V
EBO
Collect or Current 8 A
I
C
Collect or Peak C urr ent 16 A
CM
Base Current 4 A
I
B
Base P eak Current 8 A
BM
tot Tot al Di ss ipa t ion at T
Storage Tem perature -65 to 150
stg
Max. Operat ing Junction Temperat u re 150
T
j
≤ 25oC
c
80 W
o
C
o
C
1/6
ST13007
THERMAL DATA
R
thj-case
Ther mal Resistance Junct ion-case Max 1.56
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
I
CEV
I
EBO
V
CEO(sus)
Collector C ut -off
Current (V
= -1.5V)
BE
Emit ter Cut - o f f Current
=0)
(I
C
∗ Collector-Em it t er
V
=ratedV
CE
VCE=ratedV
V
=9V 1 mA
EB
CEV
CEVTc
=100oC
10
0.5
µA
mA
IC= 10 mA 400 V
Sust aining V oltage
V
∗ Collec tor-Em itt er
CE(sat)
Saturation Volta ge
V
∗ Base-Emitt er
BE(sat)
Saturation Volta ge
h
∗ DC C urr ent Gain IC=2A VCE=5V
FE
RESI STIVE LOAD
t
s
t
f
St orage Time
Fall Time
INDUCTIV E LO A D
t
s
t
f
St orage Time
Fall Time
INDUCTIV E LO A D
t
* Pulsed: Pulseduration = 300 µs, dutycycle 2 %
Note : DCcurrent gain pre-selectedproduct (Group Aand Group B). STMicroelectronics reserves the right to shipeither groups according
to productionavailability. Please contact yournearest STMicroelectronics salesoffice for deliverydetails.
s
tf
St orage Time
Fall Time
IC=2A IB=0.4A
=5A IB=1A
I
C
=8A IB=2A
I
C
I
=5A IB=1A Tc=100oC
C
IC=2A IB=0.4A
=5A IB=1A
I
C
=5A IB=1A Tc=100oC
I
C
Gr oup A
Gr oup B
=5A VCE=5V
I
C
IC=2A VCC=300V
=0.4A IB2=-0.4A
I
B1
=30µs
t
p
IC=5A VCL= 250 V
=1A IB2=-2A
I
B1
L = 200 µH
IC=5A VCL= 250 V
=1A IB2=-2A
I
B1
L = 200 µHT
= 125oC
c
16
26
5
34.5
1.6
60
2.3
110
1
2
3
3
1.2
1.6
1.5
30
40
30
350
2.5
110
V
V
V
V
V
V
V
µs
ns
µs
ns
µs
ns
2/6
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