SGS Thomson Microelectronics STB13005-1, ST13005 Datasheet
ST13005
HIGH VOLTAGE FAST-SWITCHING
■ MEDIUMVOLTAGECAPABILITY
■ NPNTRANSISTORS
■ LOW SPREADOF DYNAMICPARAMETERS
■ MINIMUMLOT-TO-LOT SPREAD FOR
RELIABLEOPERATION
■ VERYHIGH SWITCHING SPEED
■ THROUGH-HOLE I2PAK (TO-262)POWER
PACKAGEIN TUBE(SUFFIX ”-1”)
APPLICATIONS:
■ ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
■ SWITCHMODEPOWER SUPPLIES
DESCRIPTION
The devices are is manufactured using high
voltage Multi Epitaxial Planar technology for high
switchingspeeds and medium voltage capability.
They use a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintainingthe wide RBSOA.
STB13005-1
NPN POWER TRANSISTORS
3
2
1
TO-220 I2PAK
TO-262
(Suffix ”-1”)
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
January 1999
Collect or-Emit t e r V oltage (VBE= 0 ) 700 V
CES
Collect or-Emit t e r V oltage (IB= 0 ) 400 V
CEO
Emitter-Base Volt age (IC=0) 9 V
EBO
Collect or Current 4 A
I
C
Collect or Peak Cur rent (tp<5ms) 8 A
CM
I
Base Current 2 A
B
Base P eak Current (tp<5ms) 4 A
BM
Tot al Dissipa t io n at Tc=25oC75W
tot
Storage Temperature -65 to 150
stg
Max. Ope rating Junct ion Temperature 150
T
j
o
C
o
C
1/8
ST13005 / STB13005-1
THERMAL DATA
R
thj-case
Ther mal Resis t an c e Junc t ion-case M ax 1.67
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Un it
I
CEV
I
EBO
V
CEO(sus)
Collec t or Cut -off
Current (V
=-1.5V)
BE
Emitter Cut-off
Current (I
C
=0)
∗ Collec t or-Emit t er
V
= 700V
CE
= 700V T
V
CE
V
=9V 1 mA
EB
I
= 10 mA 400 V
C
case
= 100oC
1
5
mA
mA
Sust aining Voltage
=0)
(I
B
∗ Collec t or -Emitt er
V
CE(sat)
Saturation Voltage
V
∗ Base-Emi tter
BE(sat)
Saturation Voltage
h
DC Current Ga in IC=1A VCE=5V
FE
IC=1A IB=0.2A
=2A IB=0.5A
I
C
I
=4A IB=1A
C
IC=1A IB=0.2A
=2A IB=0.5A
I
C
Gr oup A
Gr oup B
=2A VCE=5V
I
C
15
27
0.5
0.6
1
1.2
1.6
32
45
8
40
V
V
V
V
RESI STIVE LOAD
t
∗
Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
Note : Product is pre-selected in DC current gain (GROUP A and GROUP B).STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
s
t
f
Storage Time
Fall Time
=2A
I
C
=-IB2=0.4A
I
B1
=125V Tp=30µs
V
CC
1.5
0.2
3.0 µs
µs
2/8
ST13005 / STB13005-1
Safe Operating Areas
DCCurrent Gain
DeratingCurve
DC Current Gain
CollectorEmitterSaturationVoltage
BaseEmitter Saturation Voltage
3/8
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