SGS Thomson Microelectronics ST13003 Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ MEDIUMVOLTAGECAPABILITY
■ LOW SPREADOF DYNAMICPARAMETERS
■ MINIMUMLOT-TO-LOT SPREAD FOR
RELIABLEOPERATION
■ VERYHIGH SWITCHING SPEED
APPLICATIONS:
■ ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
■ SWITCHMODEPOWERSUPPLIES
ST13003
NPN POWER TRANSISTOR
1
2
3
DESCRIPTION
The device is manufactured using high voltage
SOT-32
Multi Epitaxial Planar technology for high
switchingspeeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
INTERNAL SCHEMATIC DIAGRAM
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE= 0) 700 V
CES
Collector-Emitter Voltage (IB= 0) 400 V
CEO
Emitter-Base V oltage
EBO
=0, IB=0.75A, tp<10µs, Tj<150oC)
(I
C
Collect or Current 1.5 A
I
C
Collect or Peak Current ( tp<5ms) 3 A
CM
Base Curre nt 0.75 A
I
B
Base Peak Current (tp<5ms) 1.5 A
BM
Total Dissipat ion at Tc=25oC40W
tot
Stora ge T emperature -65 to 150
stg
BV
EBO
V
o
C
June 2000
1/7
ST13003
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistance J u nc tion-case Max
Ther mal Resistance J u nc tion-ambient Max
3.12
89
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Condition s Min. Typ. Max. Unit
BV
I
CEV
EBO
Collector Cut-off
Current (V
= - 1. 5V )
BE
Emitt er-Base
V
=700V
CE
=700V Tj=125oC
V
CE
I
=10mA 9 18 V
E
1
5
mA
mA
Break dow n Volt age
=0)
(I
C
V
CEO(sus)
V
CE(sat)
V
BE(sat)
h
∗ Co llec tor-Em it t er
Sust aining Voltag e
=0)
(I
B
∗ Collector-Em it t er
Saturation Voltage
∗ Base-Emitt er
Saturation Voltage
DC Current G ain IC=0.5A VCE=2V
FE
I
=10mA
C
L = 25mH
IC=0.5A IB=0.1A
=1A IB=0.25A
I
C
I
=1.5A IB=0.5A
C
IC=0.5A IB=0.1A
=1A IB=0.25A
I
C
Gr oup A
Gr oup B
=1A VCE=2V
I
C
400 V
0.5
1
3
1.0
1.2
8
15
5
20
35
25
V
V
V
V
V
RESI STIVE LOAD
t
Rise Tim e
r
t
s
t
f
St orage Time
Fall T ime
INDUCTIV E LOAD
t
∗
Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
s
St orage Time
=1A VCC= 125 V
I
C
=0.2A IB2=-0.2A
I
B1
=25µs
T
p
IC=1A IB1=0.2A
=-5V L=50mH
V
BE
= 300 V
V
clamp
0.8 µs
1.0
4.0
0.7
µs
µs
µs
2/7
ST13003
Safe Operating Areas
DCCurrent Gain
DeratingCurve
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
3/7
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