SGS Thomson Microelectronics SOA56 Datasheet
SMALL SIGNAL PNP TRANSISTOR
Type Marking
SOA56 2GT
■ SILICONEPITAXIALPLANAR PNP
TRANSISTORS
■ MINIATUREPLASTIC PACKAGEFOR
APPLICATIONIN SURFACE MOUNTING
CIRCUITS
■ MEDIUMCURRENT AFAMPLIFICATION
■ NPNCOMPLEMENTS ISSOA06
SOA56
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
P
T
Collector-Base Voltage (IE=0) -80 V
CBO
Collector-Emitter V oltage (IB=0) -80 V
CEO
Emitter-Base Voltage (IC=0) -4 V
EBO
Collect or Cur rent -0. 5 A
I
C
Total Dis sipation at Tc=25oC350mW
tot
Stora ge Temperature -65 to 150
stg
Max. O perating J unct i on Temperatu re 150
T
j
o
C
o
C
March 1996
1/4
SOA56
THERMAL DATA
R
• Mounted on a ceramic substrate area = 15 x15 x 0.5 mm
• Thermal Resistance Junction-Ambient Max 350
thj-amb
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
I
V
(BR) CEO
CBO
Collector C ut -off
Current (I
CEO
Collector C ut -off
Current (I
∗ Collector- E mitter
E
E
=0)
=0)
V
= -80 V -100 nA
CB
V
= -60 V -100 nA
CE
I
=-1mA -80 V
C
Break dow n V oltage
=0)
(I
B
V
(BR)EBO
Emitt er-Base
I
=-100µA-4V
E
Break dow n V oltage
=0)
(I
C
V
∗ Collector-Em it t er
CE(sat)
IC=-100mA IB=-10mA -0.25 V
Saturation Volta ge
∗ Base-Emitt er On
V
BE(on)
IC=-100mA VCE=-1V -1.2 V
Volt age
∗ DC Curr ent Gain IC=-10mA VCE=-1V
h
FE
f
∗
Pulsed: Pulse duration = 300 µs,duty cycle≤ 2%
Tr ansition F requency IC=-10mA VCE= -2 V f = 100 MHz 50 MHz
T
=-100mA VCE=-1V
I
C
50
50
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