SGS Thomson Microelectronics SOA06 Datasheet
SMALL SIGNAL NPN TRANSISTOR
Type Marking
SOA06 1GT
■ SILICONEPITAXIALPLANAR NPN
TRANSISTORS
■ MINIATUREPLASTIC PACKAGEFOR
APPLICATIONIN SURFACE MOUNTING
CIRCUITS
■ MEDIUMCURRENT AF AMPLIFICATION
■ PNP COMPLEMENTS IS SOA56
SOA06
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
P
T
Collector-Base Voltage (IE=0) 80 V
CBO
Collector-Emitter Voltage (IB=0) 80 V
CEO
Emitter-Base Voltage (IC=0) 4 V
EBO
Collect or Current 0.5 A
I
C
Total Dissipati on at Tc=25oC350mW
tot
Stora ge Tem perat ure -65 to 150
stg
Max. Operati ng Junct ion Temperature 150
T
j
o
C
o
C
March 1996
1/4
SOA06
THERMAL DATA
R
• Mounted on a ceramic substrate area = 15 x15 x 0.5mm
• Thermal Resistance Junction-Ambient Max 350
thj- amb
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
I
V
(BR) CEO
CBO
Collector C ut -off
Current (I
CEO
Collector C ut -off
Current (I
∗ Collector- E mitt er
E
E
=0)
=0)
V
=80V 100 nA
CB
V
=60V 100 nA
CE
I
=1mA 80 V
C
Break dow n Voltage
=0)
(I
B
V
(BR)EBO
Emitt er-Base
I
=100µA4V
E
Break dow n Voltage
=0)
(I
C
V
∗ Collector-Emitt er
CE(sat)
IC=100mA IB=10mA 0.25 V
Saturation Voltage
∗ Base-Emitt er O n
V
BE(on)
IC=100mA VCE=1V 1.2 V
Volt age
∗ DC C ur rent G ain IC=10mA VCE=1V
h
FE
f
∗
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%
Tr ansition F requency IC=10mA VCE=2V f=100MHz 100 MHz
T
=100mA VCE=1V
I
C
50
50
2/4
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