SGS Thomson Microelectronics SO692 Datasheet
SO692
SMALL SIGNAL PNP TRANSISTOR
■ SILICONEPITAXIALPLANAR PNP
TRANSISTORS
■ MINIATUREPLASTIC PACKAGEFOR
APPLICATIONIN SURFACE MOUNTING
CIRCUITS
■ HIGH VOLTAGETRANSISTORFOR VIDEO
AMPLIFIER
■ NPNCOMPLEMENTIS SO642
INTERNAL SCHEMATIC DIAGRAM
March 1996
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
CBO
Collector-Base Voltage (IE= 0) -300 V
V
CEO
Collector-Emitter Voltage (IB= 0) -300 V
V
EBO
Emitter-Base Voltage (IC=0) -5 V
I
C
Collect or Cur rent -0. 1 A
I
CM
Collect or P eak Current -0. 3 A
P
tot
Total Dissipation at Tc=25oC310mW
T
stg
Stora ge Temperature -65 to 150
o
C
T
j
Max. Operat i ng Junction Temperatur e 150
o
C
1
2
3
SOT-23
Type Marking
SO692 P39
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THERMAL DATA
R
thj-amb
•
R
thj-SR
•
Thermal Resistance Junction-Ambient Max
Ther mal Resistance Junct ion-Subst rate Max
450
320
o
C/W
o
C/W
• Mounted on a ceramic substrate area = 15 x15 x 0.7mm
ELECTRICAL CHARACTERISTICS (T
case
=25oC unlessotherwise specified)
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
CBO
Collector Cut-of f
Current (I
E
=0)
V
CB
= -200 V -100 nA
V
(BR) CBO
∗ Collector- E mitter
Break dow n V oltage
(I
E
=0)
I
C
=-100µA-300V
V
(BR) CEO
∗ Collector- E mitter
Break dow n V oltage
(I
B
=0)
I
C
=-1mA -300 V
V
(BR)EBO
Emitt er-Base
Break dow n V oltage
(I
C
=0)
I
E
=-100µA-5V
V
CE(sat)
∗ Collector-Em it t er
Saturation Voltage
IC=-20mA IB=-2mA -0.5 V
V
BE(sat)
∗ Base-Emitt er
Saturation Voltage
IC=-20mA IB=-2mA -0.9 V
h
FE
∗ DC Cur rent Gain IC=-1mA VCE=-10V
I
C
=-10mA VCE=-10V
I
C
=-30mA VCE=-10V
25
40
25
f
T
Tr ansition F r eque nc y IC=-10mA VCE=-20 V f =50 MHz 50 MHz
C
CB
Collector Base
Capacit a nc e
VCB=-20V f=1MHz 6 pF
∗
Pulsed: Pulse duration = 300 µs,duty cycle≤ 2%
SO692
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