SGS Thomson Microelectronics SO642 Datasheet
SMALL SIGNAL NPN TRANSISTOR
Type Marking
SO642 N91
■ SILICONEPITAXIALPLANAR NPN
TRANSISTOR
■ MINIATUREPLASTIC PACKAGEFOR
APPLICATIONIN SURFACE MOUNTING
CIRCUITS
■ HIGH VOLTAGETRANSISTORFOR VIDEO
AMPLIFIER
■ PNP COMPLEMENTISSO692
SO642
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
I
P
T
Collector-Base Voltage (IE=0) 300 V
CBO
Collector-Emitter Voltage (IB=0) 300 V
CEO
Emitter-Base Voltage (IC=0) 6 V
EBO
Collect or Current 0.1 A
I
C
Collect or Peak Current 0.3 A
CM
Total Dissipati on at Tc=25oC310mW
tot
Stora ge Tem perat ure -65 to 150
stg
Max. Operati ng Junct ion Temperature 150
T
j
o
C
o
C
March 1996
1/4
SO642
THERMAL DATA
R
thj-amb
R
thj-SR
• Mounted on a ceramic substrate area = 15 x15 x 0.7mm
Thermal Resistance Junction-Ambient Max
•
•
Ther mal Resistance Ju nct ion-Subs t r ate Max
450
320
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
V
(BR) CBO
CBO
Collector C ut -off
Current (I
E
=0)
∗ Collector- E mitt er
= 200 V 1 00 nA
V
CB
I
=100µA 300 V
C
Break dow n Voltage
=0)
(I
E
V
(BR) CEO
∗ Collector- E mitt er
I
= 1 mA 300 V
C
Break dow n Voltage
=0)
(I
B
V
(BR)EBO
Emitt er-Base
I
=100µA6V
E
Break dow n Voltage
=0)
(I
C
V
∗ Collector-Emitt er
CE(sat)
IC=20mA IB=2mA 0.5 V
Saturation Voltage
∗ Base-Emitt er
V
BE(sat )
IC=20mA IB=2mA 0.9 V
Saturation Voltage
∗ DC C ur rent G ain IC=1mA VCE=10V
h
C
FE
f
Tr ansition F requency IC=10mA VCE=20V f=50MHz 50 MHz
T
Collector Base
CB
=10mA VCE=10V
I
C
=30mA VCE=10V
I
C
VCE=20V f=1MHz 3 pF
25
40
40
Capacit a nc e
∗
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%
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