SGS Thomson Microelectronics SO5401 Datasheet
SMALL SIGNAL PNP TRANSISTORS
Type Marking
SO540 1 P33
■ SILICONEPITAXIALPLANAR PNP
TRANSISTORS
■ MINIATUREPLASTIC PACKAGEFOR
APPLICATIONIN SURFACE MOUNTING
CIRCUITS
■ GENERALPURPOSEAND HIGH VOLTAGE
AMPLIFIER
SO5401
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
I
P
T
Collect or- B as e V o lt age (IE= 0) -160 V
CBO
Collector-Emitter Voltage (IB= 0) -150 V
CEO
Emitter-Base Voltage (IC=0) -5 V
EBO
Collect or P ea k C ur rent -0. 6 A
CM
Tot al Dis sipation at Tc=25oC 200 mW
tot
Storage Tem perature -65 to 150
stg
Max. Operat ing Junction Temperatu re 150
T
j
o
C
o
C
October 1997
1/4
SO5401
THERMAL DATA
R
thj-amb
R
thj-SR
• Mounted on a ceramic substrate area = 7 x 5 x 0.5 mm
Thermal Resistance Junction-Ambient Max
•
•
Ther mal Resistance Junct ion-Subst rate Max
620
400
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
I
V
(BR) CBO
CBO
EBO
Collector C ut -off
Current (I
E
=0)
Collector C ut -off
Current (I
C
=0)
∗ Collector- E mitter
=-120V -50 nA
V
CB
V
=-3V -50 nA
EB
I
=-100µA-160V
C
Break dow n Voltage
=0)
(I
E
V
∗ Collector- E mitter
(BR) CEO
I
=-1mA -150 V
C
Break dow n Voltage
=0)
(I
B
V
(BR)EBO
Emitt er-Base
I
=-10nA -5 V
C
Break dow n Voltage
=0)
(I
C
V
∗ Collector-Em it t er
CE(sat)
Saturation Voltage
V
∗ Collector-Bas e
BE(sat)
Saturation Voltage
h
∗ DC Curr ent Gain IC=-1mA VCE=-5V
FE
f
C
Tr ansition F requency IC=-10mA VCE= -10V f = 1 MHz 100 400 M Hz
T
Collector Base
CB
IC=-10mA IB=-1mA
=-50mA IB=-5mA
I
C
IC=-10mA IB=-1mA
=-50mA IB=-5mA
I
C
=-10mA VCE=-5V
I
C
=-50mA VCE=-5V
I
C
IE=0 VCE= -10 V f = 1 M H z 6 pF
50
60
50
240
-0.2
-0.5
-1
-1
Capacit a nc e
NF Nois e Fig ure V
∗ Small Signal Curr ent
h
fe
=-5V IC= -0.25 mA f = 1KHz
CE
∆f = 200 Hz R
=1KΩ
G
VCE=-5V IC=-1mA f=1KHz 40 200
5dB
Gain
∗
Pulsed: Pulse duration = 300 µs,duty cycle≤ 2%
V
V
V
V
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