SGS Thomson Microelectronics SO2907, SO2907A Datasheet

SMALL SIGNAL PNP TRANSISTORS

Type Marking

SO290 7 P05

SO 2907A P03

■ SILICONEPITAXIALPLANAR PNP

TRANSISTORS

■ MINIATUREPLASTIC PACKAGEFOR

APPLICATIONIN SURFACE MOUNTING
CIRCUITS

■ MEDIUMCURRENT AFAMPLIFICATION

ANDSWITCHING

■ NPNCOMPLEMENTS ARERESPECTIVELY

SO2907 AND SO2907A

SO2907

SO2907A

2

3

1

SOT-23

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Val u e Uni t

SO29 07 SO 2907A

V
V
V

I
P

T

Collector-Emitter Voltage (VBE=0) -60 -60 V

CBO

Collector-Emitter Voltage (IB=0) -40 -60 V

CEO

Emitter-Base Voltage (IC=0) -5 V

EBO

Collect or P ea k C ur rent -0. 8 A

CM

Tot al Di ssipation at Tc=25oC 350 mW

tot

Storage Tem perature -65 to 150

stg

Max. Operat ing Junction Temperatu re 150

T

j

o

C

o

C

March 1996

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SO2907/SO2907A

THERMAL DATA

R

thj-amb

R

thj-SR

• Mounted on a ceramic substrate area = 15 x15 x 0.7 mm

Thermal Resistance Junction-Ambient Max

•

•

Ther mal Resistance Junct ion-Subst rate Max

350
290

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

Symbol Parameter Test C ondition s Min. Typ. Max. Unit

I

CEX

Collector C ut -off

VCE=-30V VBE=-3V -50 nA

Current

I

I

V

(BR) CEO

V

(BR) CBO

BEX
CBO

Base Cut-o ff Current VCE=-30V VBE=-3V -50 nA
Collector C ut -off

Current (I

E

=0)

∗ Collector- E mitter

Break dow n Voltage

=0)

(I

B

∗ Collector- B ase

V

=-50V

CB

for SO2907
for SO2907A

I

=-10mA

C

for SO2907
for SO2907A

I

=-10µA-60V

C

-40

-60

-20

-10

Break dow n Voltage

=0)

(I

B

V

(BR)EBO

Emitt er-Base

I

=-10µA-5V

E

Break dow n Voltage

=0)

(I

C

V

V

∗ Co llector-Em it t er

CE(sat)

Saturation Volta ge

∗ Collector-Bas e

BE(sat)

Saturation Volta ge

h

∗ DC C ur rent Gain IC=-0.1mA VCE=-10V

FE

IC=-150mA IB=-15mA

=-500mA IB=-50mA

I

C

IC=-150mA IB=-15mA
I

=-500mA IB=-50mA

C

for SO2907
for SO2907A

=-1mA VCE=-10V

I

C

for SO2907
for SO2907A

=-10mA VCE=-10V

I

C

for SO2907
for SO2907A

=-150mA VCE=-10V

I

C

f

C

Tr ansition F requency IC=-50mA VCE= -20V f = 100M Hz 200 MHz

T

CB

Collector Base

IE=0 VCB= -10 V f = 1 MHz 8 pF

35
75

50

100

75
100
100 300

-0.4

-1.6

-1.3

-2.6

Capacit a nc e

EB

Emitt er Base

C

IC=0 VEB=-2V f=1MHz 30 pF

Capacit a nc e

t

t

t

t

∗

Pulsed: Pulse duration = 300 µs,duty cycle≤ 2%

Delay Time IC=-150mA IB1= -15 mA 10 ns

d

t

Rise Time 40 ns

r

Switching On Time 45 ns

on

St orage Time IC=-150mA IB1=-IB2= -15mA 80 ns

s

t

Fall T ime 30 ns

f

Switching Off Time 100 ns

off

nA
nA

V
V

V
V

V
V

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