SMALL SIGNAL PNP TRANSISTORS
Type Marking
SO290 7 P05
SO 2907A P03
■ SILICONEPITAXIALPLANAR PNP
TRANSISTORS
■ MINIATUREPLASTIC PACKAGEFOR
APPLICATIONIN SURFACE MOUNTING
CIRCUITS
■ MEDIUMCURRENT AFAMPLIFICATION
ANDSWITCHING
■ NPNCOMPLEMENTS ARERESPECTIVELY
SO2907 AND SO2907A
SO2907
SO2907A
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
SO29 07 SO 2907A
V
V
V
I
P
T
Collector-Emitter Voltage (VBE=0) -60 -60 V
CBO
Collector-Emitter Voltage (IB=0) -40 -60 V
CEO
Emitter-Base Voltage (IC=0) -5 V
EBO
Collect or P ea k C ur rent -0. 8 A
CM
Tot al Di ssipation at Tc=25oC 350 mW
tot
Storage Tem perature -65 to 150
stg
Max. Operat ing Junction Temperatu re 150
T
j
o
C
o
C
March 1996
1/4
SO2907/SO2907A
THERMAL DATA
R
thj-amb
R
thj-SR
• Mounted on a ceramic substrate area = 15 x15 x 0.7 mm
Thermal Resistance Junction-Ambient Max
•
•
Ther mal Resistance Junct ion-Subst rate Max
350
290
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
CEX
Collector C ut -off
VCE=-30V VBE=-3V -50 nA
Current
I
I
V
(BR) CEO
V
(BR) CBO
BEX
CBO
Base Cut-o ff Current VCE=-30V VBE=-3V -50 nA
Collector C ut -off
Current (I
E
=0)
∗ Collector- E mitter
Break dow n Voltage
=0)
(I
B
∗ Collector- B ase
V
=-50V
CB
for SO2907
for SO2907A
I
=-10mA
C
for SO2907
for SO2907A
I
=-10µA-60V
C
-40
-60
-20
-10
Break dow n Voltage
=0)
(I
B
V
(BR)EBO
Emitt er-Base
I
=-10µA-5V
E
Break dow n Voltage
=0)
(I
C
V
V
∗ Co llector-Em it t er
CE(sat)
Saturation Volta ge
∗ Collector-Bas e
BE(sat)
Saturation Volta ge
h
∗ DC C ur rent Gain IC=-0.1mA VCE=-10V
FE
IC=-150mA IB=-15mA
=-500mA IB=-50mA
I
C
IC=-150mA IB=-15mA
I
=-500mA IB=-50mA
C
for SO2907
for SO2907A
=-1mA VCE=-10V
I
C
for SO2907
for SO2907A
=-10mA VCE=-10V
I
C
for SO2907
for SO2907A
=-150mA VCE=-10V
I
C
f
C
Tr ansition F requency IC=-50mA VCE= -20V f = 100M Hz 200 MHz
T
CB
Collector Base
IE=0 VCB= -10 V f = 1 MHz 8 pF
35
75
50
100
75
100
100 300
-0.4
-1.6
-1.3
-2.6
Capacit a nc e
EB
Emitt er Base
C
IC=0 VEB=-2V f=1MHz 30 pF
Capacit a nc e
t
t
t
t
∗
Pulsed: Pulse duration = 300 µs,duty cycle≤ 2%
Delay Time IC=-150mA IB1= -15 mA 10 ns
d
t
Rise Time 40 ns
r
Switching On Time 45 ns
on
St orage Time IC=-150mA IB1=-IB2= -15mA 80 ns
s
t
Fall T ime 30 ns
f
Switching Off Time 100 ns
off
nA
nA
V
V
V
V
V
V
2/4
SOT-23 MECHANICALDATA
SO2907/SO2907A
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 0.85 1.1 33.4 43.3
B 0.65 0.95 25.6 37.4
C 1.20 1.4 47.2 55.1
D 2.80 3 110.2 118
E 0.95 1.05 37.4 41.3
F 1.9 2.05 74.8 80.7
G 2.1 2.5 82.6 98.4
H 0.38 0.48 14.9 18.8
L 0.3 0.6 11.8 23.6
M 0 0.1 0 3.9
N 0.3 0.65 11.8 25.6
O 0.09 0.17 3.5 6.7
mm mils
0044616/B
3/4
SO2907/SO2907A
Information furnished is believedto be accurate and reliable. However, SGS-THOMSON Microelectronicsassumes no responsability for the
consequencesof use ofsuch information nor for anyinfringement of patentsor other rights of third parties which may resultsfrom its use. No
licenseis grantedby implicationor otherwise underany patent or patentrights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice.This publication supersedes andreplaces all information previously supplied.
SGS-THOMSONMicroelectronics productsare notauthorizedfor useascriticalcomponents in life supportdevices or systemswithoutexpress
writtenapproval of SGS-THOMSON Microelectonics.
1995 SGS-THOMSONMicroelectronics- Printedin Italy- All Rights Reserved
Australia- Brazil - Canada- China- France- Germany- Hong Kong- Italy- Japan- Korea - Malaysia- Malta- Morocco- TheNetherlands -
Singapore- Spain- Sweden- Switzerland- Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSONMicroelectronicsGROUP OF COMPANIES
.
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