SMALL SIGNAL NPN TRANSISTORS
Type Marking
BSV52 B2
SO236 9 N11
SO 2369A N81
■ SILICONEPITAXIALPLANARNPN
TRANSISTORS
■ MINIATUREPLASTIC PACKAGEFOR
APPLICATIONIN SURFACEMOUNTING
CIRCUITS
■ LOW CURRENT, FAST SWITCHING
APPLICATIONS.
BSV52
SO2369/SO2369A
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
SO236 9/ A BSV52
V
V
V
V
I
P
T
Collector-Emitter Voltage (VBE=0) 40 20 V
CES
Collect or- B as e Vo lt age (IE=0) 40 20 V
CBO
Collector-Emitter Voltage (IB=0) 15 12 V
CEO
Emitter-Base Voltage (IC=0) 4.5 5 V
EBO
Collect or Pea k Curr ent 0.2 A
CM
Tot al Dissipation at Tc=25oC 200 mW
tot
Storage Temperature -65 to 150
stg
Max. Operating J unc tion Tem per ature 150
T
j
o
C
o
C
March 1996
1/5
BSV52/SO2369/SO2369A
THERMAL DATA
R
thj-amb
R
thj-SR
• Mounted on a ceramic substrate area = 7 x 5 x 0.5 mm
Thermal Resistance Junction-Ambient Max
•
•
Ther mal Resistance Junc t io n-S ubstrat e Max
620
400
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
CBO
I
CES
V
(BR)CES
V
(BR) CEO
V
(BR) CBO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
h
FE
∗
Pulsed: Pulse duration = 300 µs,duty cycle≤ 2%
Collector Cut -off
Current (I
E
=0)
=20V
V
CB
for SO2369/S O2369A
=10V
V
CB
for B SV52
=10V Tj= 150oC
V
CB
for B SV52
Collector Cut -off
Current (V
BE
=0)
∗ Collector-Em it t er
Break dow n Voltage
=0)
(I
B
∗ Co llec tor-Em it t er
Break dow n Voltage
=0)
(I
B
∗ Co llec tor-Bas e
Break dow n Voltage
=0)
(I
B
Emitt er-Base
Break dow n Voltage
=0)
(I
C
∗ Collector-Em it t er
Saturation Voltage
V
=20V
CB
for SO2369A 400 nA
I
=10µA
C
for SO2369/S O2369A
for B SV52
I
=10mA
C
for SO2369/S O2369A
for B SV52
I
=10µA
C
for SO2369/S O2369A
for B SV52
I
=10µA
E
for SO2369/S O2369A
for B SV52
IC=10mA IB=0.3mA
for B SV52
=10mA IB=1mA
I
C
for SO2369A
for B SV52
=30mA IB=3mA
I
C
for SO2369 BSV 52
=50mA IB=5mA
I
C
for B SV52
=100mA IB=10mA
I
C
for SO2369A
∗ Collector-Bas e
Saturation Voltage
IC=10mA IB=1mA
=30mA IB=3mA
I
C
for SO2369A
=50mA IB=5mA
I
C
for B SV52
=100mA IB=10mA
I
C
for SO2369A
∗ DC C urr ent G ain IC=1mA VCE=1V for BSV52
=10mA VCE=0. 35V for SO2369 A
I
C
=10mA VCE=1V for Al l types
I
C
=30mA VCE=0.4V for SO236 9A
I
C
=50mA VCE=1V for BSV52
I
C
I
=100mA VCE=1V for SO2369A
C
=100mA VCE=2V for SO2369
I
C
400
100
5
40
20
15
12
40
20
4.5
5
0.3
0.2
0.25
0.25
0.4
0.5
0.7 0.85
1.15
1.2
1.6
25
40
40
120
120
30
25
20
20
nA
nA
µA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
2/5
BSV52/SO2369/SO2369A
ELECTRICAL CHARACTERISTICS (Continued)
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
f
C
C
t
t
Tr ansition Frequency IC=10mA VCE= 10V f = 100MHz
T
CB
Collector B ase
for SO2369A
for B S V52/SO 2369
500
400
IE=0 VCE=5V f=1MHz 4 pF
Capacit a nc e
Emitt er Base
EB
Capacit a nc e
Turn On Time IC=10mA VBE=-0.5V
on
St orage Tim e IC=10mA IB1=-IB2=10mA 13 ns
s
IC=0 VEB=1V f=1MHz
for B SV52
=3mA
I
B
4.5 pF
12 ns
MHz
MHz
t
∗
Pulsed: Pulse duration = 300 µs,duty cycle≤ 2%
Turn Off Time IC=10mA IB1=3mA
off
= -1.5 mA
I
B2
18 ns
3/5
BSV52/SO2369/SO2369A
SOT-23 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 0.85 1.1 33.4 43.3
B 0.65 0.95 25.6 37.4
C 1.20 1.4 47.2 55.1
D 2.80 3 110.2 118
E 0.95 1.05 37.4 41.3
F 1.9 2.05 74.8 80.7
G 2.1 2.5 82.6 98.4
H 0.38 0.48 14.9 18.8
L 0.3 0.6 11.8 23.6
M 0 0.1 0 3.9
N 0.3 0.65 11.8 25.6
O 0.09 0.17 3.5 6.7
mm mils
4/5
0044616/B
BSV52/SO2369/SO2369A
Information furnished is believedto be accurateand reliable.However, SGS-THOMSON Microelectronicsassumes no responsability for the
consequencesof use ofsuch information nor for anyinfringement of patentsor otherrights of third parties which may results from its use. No
licenseis grantedby implicationor otherwise underany patent or patentrights of SGS-THOMSONMicroelectronics.Specificationsmentioned
in this publication are subject to change without notice.This publication supersedes andreplaces all information previously supplied.
SGS-THOMSONMicroelectronics products are notauthorized for useas critical components inlifesupportdevicesor systems withoutexpress
writtenapproval of SGS-THOMSON Microelectonics.
1995 SGS-THOMSONMicroelectronics- Printedin Italy- AllRights Reserved
Australia- Brazil - Canada- China- France- Germany- Hong Kong - Italy- Japan- Korea- Malaysia - Malta- Morocco- The Netherlands -
Singapore- Spain- Sweden- Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSONMicroelectronicsGROUP OF COMPANIES
.
5/5
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