SGS Thomson Microelectronics SO2369 Datasheet
SMALL SIGNAL NPN TRANSISTORS
Type Marking
BSV52 B2
SO236 9 N11
SO 2369A N81
■ SILICONEPITAXIALPLANARNPN
TRANSISTORS
■ MINIATUREPLASTIC PACKAGEFOR
APPLICATIONIN SURFACEMOUNTING
CIRCUITS
■ LOW CURRENT, FAST SWITCHING
APPLICATIONS.
BSV52
SO2369/SO2369A
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
SO236 9/ A BSV52
V
V
V
V
I
P
T
Collector-Emitter Voltage (VBE=0) 40 20 V
CES
Collect or- B as e Vo lt age (IE=0) 40 20 V
CBO
Collector-Emitter Voltage (IB=0) 15 12 V
CEO
Emitter-Base Voltage (IC=0) 4.5 5 V
EBO
Collect or Pea k Curr ent 0.2 A
CM
Tot al Dissipation at Tc=25oC 200 mW
tot
Storage Temperature -65 to 150
stg
Max. Operating J unc tion Tem per ature 150
T
j
o
C
o
C
March 1996
1/5
BSV52/SO2369/SO2369A
THERMAL DATA
R
thj-amb
R
thj-SR
• Mounted on a ceramic substrate area = 7 x 5 x 0.5 mm
Thermal Resistance Junction-Ambient Max
•
•
Ther mal Resistance Junc t io n-S ubstrat e Max
620
400
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
CBO
I
CES
V
(BR)CES
V
(BR) CEO
V
(BR) CBO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
h
FE
∗
Pulsed: Pulse duration = 300 µs,duty cycle≤ 2%
Collector Cut -off
Current (I
E
=0)
=20V
V
CB
for SO2369/S O2369A
=10V
V
CB
for B SV52
=10V Tj= 150oC
V
CB
for B SV52
Collector Cut -off
Current (V
BE
=0)
∗ Collector-Em it t er
Break dow n Voltage
=0)
(I
B
∗ Co llec tor-Em it t er
Break dow n Voltage
=0)
(I
B
∗ Co llec tor-Bas e
Break dow n Voltage
=0)
(I
B
Emitt er-Base
Break dow n Voltage
=0)
(I
C
∗ Collector-Em it t er
Saturation Voltage
V
=20V
CB
for SO2369A 400 nA
I
=10µA
C
for SO2369/S O2369A
for B SV52
I
=10mA
C
for SO2369/S O2369A
for B SV52
I
=10µA
C
for SO2369/S O2369A
for B SV52
I
=10µA
E
for SO2369/S O2369A
for B SV52
IC=10mA IB=0.3mA
for B SV52
=10mA IB=1mA
I
C
for SO2369A
for B SV52
=30mA IB=3mA
I
C
for SO2369 BSV 52
=50mA IB=5mA
I
C
for B SV52
=100mA IB=10mA
I
C
for SO2369A
∗ Collector-Bas e
Saturation Voltage
IC=10mA IB=1mA
=30mA IB=3mA
I
C
for SO2369A
=50mA IB=5mA
I
C
for B SV52
=100mA IB=10mA
I
C
for SO2369A
∗ DC C urr ent G ain IC=1mA VCE=1V for BSV52
=10mA VCE=0. 35V for SO2369 A
I
C
=10mA VCE=1V for Al l types
I
C
=30mA VCE=0.4V for SO236 9A
I
C
=50mA VCE=1V for BSV52
I
C
I
=100mA VCE=1V for SO2369A
C
=100mA VCE=2V for SO2369
I
C
400
100
5
40
20
15
12
40
20
4.5
5
0.3
0.2
0.25
0.25
0.4
0.5
0.7 0.85
1.15
1.2
1.6
25
40
40
120
120
30
25
20
20
nA
nA
µA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
2/5
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