SGS Thomson Microelectronics SO2222, SO2222A Datasheet
SMALL SIGNAL NPN TRANSISTORS
Type Marking
SO222 2 N13
SO 2222A N20
■ SILICONEPITAXIALPLANARNPN
TRANSISTORS
■ MINIATUREPLASTIC PACKAGEFOR
APPLICATIONIN SURFACEMOUNTING
CIRCUITS
■ MEDIUMCURRENT AFAMPLIFICATION
ANDSWITCHING
■ PNP COMPLEMENTSARE RESPECTIVELY
SO2907 AND SO2907A
SO2222
SO2222A
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
SO22 22 SO 2222A
V
V
V
I
P
T
Collector-Emitter Voltage (VBE=0) 60 75 V
CBO
Collector-Emitter Voltage (IB=0) 30 40 V
CEO
Emitter-Base Voltage (IC=0) 5 6 V
EBO
Collect or Pea k Curr ent 0.8 A
CM
Tot al Dissipation at Tc=25oC 350 mW
tot
Storage Temperature -65 to 150
stg
Max. Operating J unc tion Tem per ature 150
T
j
o
C
o
C
March 1996
1/5
SO2222/SO2222A
THERMAL DATA
R
thj-amb
R
thj-SR
• Mounted on a ceramic substrate area = 15 x15 x 0.6 mm
Thermal Resistance Junction-Ambient Max
•
•
Ther mal Resistance Junc t io n-S ubstrat e Max
350
290
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
I
I
I
V
(BR) CEO
V
(BR) CBO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
h
C
CEX
BEX
CBO
EBO
FE
f
Collector Cut -off
Current (V
BE
=0)
Base Cut-off Current
=0)
(V
BE
Collector Cut -off
Current (I
E
=0)
Emit ter Cut-off Current
=0)
(I
C
=60V VBE=-3V
V
CE
for SO2222A
V
=60V VBE=-3V
CE
for SO2222A
V
=ratedV
CB
VCB=ratedV
V
=3V
EB
CBO
CBOTj
for SO2222
for SO2222A
∗ Collector- E mitter
Break dow n Voltage
=0)
(I
B
∗ Collector- B ase
Break dow n Voltage
=0)
(I
B
Emitt er-Base
Break dow n Voltage
=0)
(I
C
∗ Co llector-Emitter
Saturation Voltage
I
=10mA
C
for SO2222
for SO2222A
I
=10µA
C
for SO2222
for SO2222A
I
=10µA
E
for SO2222
for SO2222A
IC=150mA IB=15mA
for SO2222
for SO2222A
=500mA IB=50mA
I
C
for SO2222
for SO2222A
∗ Collector-Bas e
Saturation Voltage
IC=150mA IB=15mA
for SO2222
for SO2222A
=500mA IB=50mA
I
C
for SO2222
for SO2222A
∗ DC Current G ain IC=0.1mA VCE=10V
=1mA VCE=10V
I
C
=10mA VCE=10V
I
C
=150mA VCE=10V
I
C
=150mA VCE=1V
I
C
=500mA VCE=10V
I
C
for SO2222
for SO2222A
Tr ansition Frequency IC=20mA VCE= 20V f = 100MHz
T
for SO2222
for SO2222A
CB
Collector B ase
IE=0 VCB=10V f=1MHz 8 pF
=150oC
30
40
60
75
5
6
0.6
35
50
75
100
50
30
40
250
300
10 nA
20 nA
10
10
30
15
0.4
0.3
1.6
1
1.3
1.2
2.6
2
300
Capacit a nc e
∗
Pulsed: Pulse duration = 300 µs,duty cycle≤ 2%
nA
µA
nA
nA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
MHz
MHz
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