SMALL SIGNAL NPN TRANSISTORS
Type Marking
SO222 2 N13
SO 2222A N20
■ SILICONEPITAXIALPLANARNPN
TRANSISTORS
■ MINIATUREPLASTIC PACKAGEFOR
APPLICATIONIN SURFACEMOUNTING
CIRCUITS
■ MEDIUMCURRENT AFAMPLIFICATION
ANDSWITCHING
■ PNP COMPLEMENTSARE RESPECTIVELY
SO2907 AND SO2907A
SO2222
SO2222A
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
SO22 22 SO 2222A
V
V
V
I
P
T
Collector-Emitter Voltage (VBE=0) 60 75 V
CBO
Collector-Emitter Voltage (IB=0) 30 40 V
CEO
Emitter-Base Voltage (IC=0) 5 6 V
EBO
Collect or Pea k Curr ent 0.8 A
CM
Tot al Dissipation at Tc=25oC 350 mW
tot
Storage Temperature -65 to 150
stg
Max. Operating J unc tion Tem per ature 150
T
j
o
C
o
C
March 1996
1/5
SO2222/SO2222A
THERMAL DATA
R
thj-amb
R
thj-SR
• Mounted on a ceramic substrate area = 15 x15 x 0.6 mm
Thermal Resistance Junction-Ambient Max
•
•
Ther mal Resistance Junc t io n-S ubstrat e Max
350
290
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
I
I
I
V
(BR) CEO
V
(BR) CBO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
h
C
CEX
BEX
CBO
EBO
FE
f
Collector Cut -off
Current (V
BE
=0)
Base Cut-off Current
=0)
(V
BE
Collector Cut -off
Current (I
E
=0)
Emit ter Cut-off Current
=0)
(I
C
=60V VBE=-3V
V
CE
for SO2222A
V
=60V VBE=-3V
CE
for SO2222A
V
=ratedV
CB
VCB=ratedV
V
=3V
EB
CBO
CBOTj
for SO2222
for SO2222A
∗ Collector- E mitter
Break dow n Voltage
=0)
(I
B
∗ Collector- B ase
Break dow n Voltage
=0)
(I
B
Emitt er-Base
Break dow n Voltage
=0)
(I
C
∗ Co llector-Emitter
Saturation Voltage
I
=10mA
C
for SO2222
for SO2222A
I
=10µA
C
for SO2222
for SO2222A
I
=10µA
E
for SO2222
for SO2222A
IC=150mA IB=15mA
for SO2222
for SO2222A
=500mA IB=50mA
I
C
for SO2222
for SO2222A
∗ Collector-Bas e
Saturation Voltage
IC=150mA IB=15mA
for SO2222
for SO2222A
=500mA IB=50mA
I
C
for SO2222
for SO2222A
∗ DC Current G ain IC=0.1mA VCE=10V
=1mA VCE=10V
I
C
=10mA VCE=10V
I
C
=150mA VCE=10V
I
C
=150mA VCE=1V
I
C
=500mA VCE=10V
I
C
for SO2222
for SO2222A
Tr ansition Frequency IC=20mA VCE= 20V f = 100MHz
T
for SO2222
for SO2222A
CB
Collector B ase
IE=0 VCB=10V f=1MHz 8 pF
=150oC
30
40
60
75
5
6
0.6
35
50
75
100
50
30
40
250
300
10 nA
20 nA
10
10
30
15
0.4
0.3
1.6
1
1.3
1.2
2.6
2
300
Capacit a nc e
∗
Pulsed: Pulse duration = 300 µs,duty cycle≤ 2%
nA
µA
nA
nA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
MHz
MHz
2/5
SO2222/SO2222A
ELECTRICAL CHARACTERISTICS (Continued)
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
C
NF Noise Figure I
h
h
hfe∗ Sm all S ignal Current
h
oe
t
t
∗
Pulsed: Pulse duration = 300 µs,duty cycle≤ 2%
EB
Emitt er Base
Capacit a nc e
IE=0 VEB=0.5V f=1MHz
for SO2222
for SO2222A
=0.1mA VCE=10V f=1KHz
C
∆f = 200 Hz R
=1KΩ
G
for SO2222A o n ly
∗ Input I m p edanc e VCE=10V IC=1mA f=1KHz
ie
=10V IC=10mA f=1KHz
V
CE
2
0.25
for SO2222A o n ly
∗ Reverse Vo ltage Ratio VCE=10V IC=1mA f=1KHz
re
=10V IC=10mA f=1KHz
V
CE
for SO2222A o n ly
50
75
Gain
VCE=10V IC=1mA f=1KHz
=10V IC=10mA f=1KHz
V
CE
for SO2222A o n ly
∗ Output Adm it t a nc e VCE=10V IC=1mA f=1KHz
=10V IC=10mA f=1KHz
V
CE
5
25
for SO2222A o n ly
Delay Time IC=-150mA VBE=-0.5V
d
t
Rise T im e 25 ns
r
St orage Tim e IC=150mA IB1=-IB2=15mA
s
t
Fall T ime 60 ns
f
for SO2222A o n ly
for SO2222A o n ly
30
25
4dB
8
1.25KΩKΩ
8
4
300
375
35
200
10 ns
225 ns
10
10
pF
pF
-4
-4
µS
µS
3/5
SO2222/SO2222A
SOT-23 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 0.85 1.1 33.4 43.3
B 0.65 0.95 25.6 37.4
C 1.20 1.4 47.2 55.1
D 2.80 3 110.2 118
E 0.95 1.05 37.4 41.3
F 1.9 2.05 74.8 80.7
G 2.1 2.5 82.6 98.4
H 0.38 0.48 14.9 18.8
L 0.3 0.6 11.8 23.6
M 0 0.1 0 3.9
N 0.3 0.65 11.8 25.6
O 0.09 0.17 3.5 6.7
mm mils
4/5
0044616/B
SO2222/SO2222A
Information furnished is believedto be accurateand reliable.However, SGS-THOMSON Microelectronicsassumes no responsability for the
consequencesof use ofsuch information nor for anyinfringement of patentsor otherrights of third parties which may results from its use. No
licenseis grantedby implicationor otherwise underany patent or patentrights of SGS-THOMSONMicroelectronics.Specificationsmentioned
in this publication are subject to change without notice.This publication supersedes andreplaces all information previously supplied.
SGS-THOMSONMicroelectronics products are notauthorized for useas critical components inlifesupportdevicesor systems withoutexpress
writtenapproval of SGS-THOMSON Microelectonics.
1995 SGS-THOMSONMicroelectronics- Printedin Italy- AllRights Reserved
Australia- Brazil - Canada- China- France- Germany- Hong Kong - Italy- Japan- Korea- Malaysia - Malta- Morocco- The Netherlands -
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.
5/5
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