SGS Thomson Microelectronics SMTPB120, SMTPB270, SMTPB62, SMTPB68 Datasheet
SMTPB SERIES
MAINAPPLICATIONS
Any sensitive equipment requiring protection
againstlightning strikes:
ANALOGAND DIGITALLINE CARDS
MAINDISTRIBUTIONFRAMES
TERMINALSANDTRANSMISSIONEQUIPMENT
GMS-TUBEREPLACEMENT
DESCRIPTION
TheSMTPBxxserieshasbeen designedtoprotect
telecommunication equipment against lightning
andtransient inducedby AC powerlines.
FEATURES
BIDIRECTIONALCROWBARPROTECTION.
BREAKDOWNVOLTAGERANGE:
From62 V To270V.
HOLDINGCURRENT: I
REPETITIVEPEAKPULSECURRENT :
= 100A, 10/1000µs.
I
PP
BENEFITS
= 150mA min
H
TRISIL
TM
SMC
SCHEMATIC DIAGRAM
NOAGEINGANDNO NOISE
IF DESTROYED,THE SMTPBFALLS INTO
SHORTCIRCUIT, STILLENSURING
PROTECTION
COMPLIESWITHTHE
FOLLOWING STANDARDS:
CCITTK20 4000 10/700 5/310 100 VDE0433
VDE0878 4000 1.2/50 1/20 100 IEC-1000-4-5 level4
FCCPart 68, lightningsurge
typeA
FCCPart 68, lightningsurge
typeB
BELLCORETR-NWT-001089
Firstlevel
BELLCORETR-NWT-001089
Secondlevel
CNETl31-24 4000 0.5/700 0.8/310 100 -
Peak Surge
Voltage
(V)
4000 10/700 5/310 100 -
level4
1500
800
100 5/320 5/320 25 -
2500
1000
500 2/10 2/10 500 -
Voltage
Waveform
(µs)
10/700
1.2/50
10/160
10/560
2/10
10/1000
Current
Waveform
(µs)
5/310
8/20
10/160
10/560
2/10
10/1000
Admissible
Ipp
(A)
100
100
200
100
500
100
Necessary
Resistor
(Ω)
-
-
-
-
-
-
August 1999 - Ed:2C
1/5
SMTPBxxx
ABSOLUTE MAXIMUMRATINGS (T
amb
=25°C)
Symbol Parameter Value Unit
P Powerdissipation T
I
PP
I
TSM
Peakpulse current
Nonrepetitivesurge peak on-state
=50 °C5 W
lead
10/1000µs
8/20 µs
2/10 µs
100
250
500
tp= 20ms 50 A
current
dV/dt Critical rateof riseof off-statevoltage V
T
stg
T
j
T
L
Storagetemperaturerange
Maximumjunctiontemperature
Maximumleadtemperatureforsolderingduring10 s. + 260 °C
RM
5KV/µs
- 55to +150
+ 150
THERMAL RESISTANCES
Symbol Parameter Value Unit
(j-l) Junctionto leads 20 °C/W
R
th
(j-a) Junctionto ambient.
R
th
75 °C/W
Onprinted circuitwith standardfootprintdimensions.
ELECTRICAL CHARACTERISTICS
(T
amb
=25°C)
A
°C
°C
Symbol Parameter
V
RM
I
RM
V
R
V
BR
V
BO
I
H
I
BO
I
PP
Stand-offvoltage
Leakagecurrent at stand-offvoltage
ContinuousReversevoltage
Breakdownvoltage
Breakovervoltage
Holdingcurrent
Breakovercurrent
Peakpulse current
C Capacitance
Type Marking I
RM
@V
RM
max. max.
Laser µAVµAV VmAmApF
SMT P B62
SMT P B68
SMT P B120
SMT P B200
SMT P B270
All parameters tested at 25°C,except where indicated.
W07
W11
W21
W31
W43
2
2
2
2
2
56
61
108
180
243
IR@V
note1
50
50
50
50
50
R
62
68
120
200
270
VBO@I
max.
note2
82
90
160
267
360
BO
I
H
max. min.
note3
800
800
800
800
800
150
150
150
150
150
C
typ.
note4
160
160
140
130
120
Note 1: IRmeasuredat VRguarantees V
Note 2: Measured at 50Hz (1cycle) - Seetest circuit1.
2/5
BRmin
≥ V
R
Note 3: See testcircuit 2.
Note 4: VR=1V, F = 1MHz. Refer to fig 3 forC versus VR.
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