SGS Thomson Microelectronics SMTHDT120, SMTHDT58, SMTHDT80 Datasheet

SMTHDTxx
ApplicationSpecific Discretes
A.S.D.
FEATURES
UND IRECTIONA L CROWBA R PROTECTION.
PEAKPULSECURRENT: IPP= 75A , 10/1000µs.
HOLDINGCURRENT= 150mA. BREAKDOWNVOLTAGE:
SMTHDT58= 58V. SMTHDT80= 80V. SMTHDT120= 120V.
PACKAGES: SMTHDTxx= SURFACEMOUNTPACKAGE.
DESCRIPTION:TRIBALANCED PROTECTION
Dedicated protection devices for ISDN LINE CARDand high speeddata telecomlines.
Usedwiththerecommendedconfigurationusing 3 components,theywill provide=
-Dualbidirectionnalprotection,with fixed breakdownvoltage in bothcommonand differentialmodes.
-Low capacitancesfromlines to ground.
-Verygood capacitancebalance: C= 30 pF.
TM
DISCRETE SOLUTION FOR ISDN PROTECTION
TRISIL
SMC
FUNCTIONAL DIAGRAM.
A
K
ABSOLUTE RATINGS(limitingvalues) (-40°C T
Symbol Parameter Value Unit
I
PP
I
TSM
di/dt
dv/dt
T
stg
T
THERMAL RESISTANCES
Symbol Parameter Value Unit
(j-l)
R
th
April 1999 - Ed: 1A
Peakpulse current
Non repetitive surge peak on-state current
Criticalrateof riseof on-statecurrent Criticalrateof riseof off-statevoltage Storageand operatingjunctiontemperaturerange
j
Junction-leadsThermalResistance
+85°C)
amb
10/1000µs
8/20 µs
tp= 20ms 30 A
Nonrepetitive 100 A/µs
67%V
BR
SMC 200 °C/W
75
150
5KV/µs
- 40 to + 150 + 150
A
°C °C
1/6
SMTHDTxx
Symbol Parameter
V
RM
V
BR
V
BO
I
H
V
T
V
F
I
BO
I
PP
V
F
Stand-offvoltage Breakdownvoltage Breakovervoltage Holdingcurrent On-statevoltage ForwardVoltageDrop Breakovercurrent Peak pulsecurrent ForwardVoltageDrop
VV
BOVBR
V
RM
PARAMETERSRELATED TO THE DIODE.
Parameter Test conditions Value Unit
V
F
IF= 5A, TP=500µs5V
I
I
F
I
RM
1mA I
H
I
BO
I
T
I
PP
V
V
T
F
V
PARAMETERSRELATED TO THE PROTECTIONTRISIL.
Types IR@V
RM
V
BR @IR
V
BO
I
BO
IH VT C
max min max min max min max max
note1 note1 note1 note1 note2 note3
µA V V mA V mA mA mA V pF
SMTHDT58 10 56 58 1 80 150 800 150 5 400
SMTHDT80 10 68 80 1 120 150 800 150 5 250
SMTHDT120 10 102 120 1 180 150 800 150 5 200
Allparameters tested at 25 °C, except whereindicated.
Note 1: Seethe reference test circuitfor I Note 2: Squarepulse Tp = 500µs-I Note 3: V
= 1V,F =1MHz.
R
T
and VBOparameters.
H,IBO
= 5A.
2/6
Loading...
+ 4 hidden pages