SGS Thomson Microelectronics SMTHBT200 Datasheet
SMTHBT200
TRISIL
FEATURES
BIDIRECTIONALCROWBARPROTECTION
REPETITIVEPEAK PULSECURRENT:
= 100 A (10/1000µs)
I
PP
HOLDINGCURRENT: I
BREAKDOWNVOLTAGE: 200V min
BREAKOVERVOLTAGE: 265Vmax
DESCRIPTION
This protection device h as been especially
designed to protect subscriber line cards using
SLICS without int egrated ring generators.
The SMTHBT200 device protects ring
generat or relays against transient
= 150 mA
H
TM
FOR LINE CARD PROTECTION
SMC
SCHEMATIC DIAGRAM
INACCORDANCEWITHTHEFOLLOWINGSTANDARDS :
- CCITTK20: 10/700µs4kV
5/310µs 100 A
- VDE 0433: 10/700µs4kV
5/310µs 100 A
- VDE 0878: 1.2/50µs4kV
1/20µs 100A
- FCC Part68: 2/10µs 2.5 kV
BELLCORETR-NWT-001089: 2/10µs 500A
- BELLCORETR-NWT-000974:10/1000µs1kV
10/1000µs 100A
August 1999-Ed : 3A
1/6
SMTHBT200
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th(j-I)
th(j-a)
Junctionto leads 10 °C/W
Junctionto ambienton printedcircuit
75 °C/W
(withstandardfootprint dimensions)
ABSOLUTE MAXIMUMRATINGS
(T
=
25°C,unless otherwisespecified)
amb
Symbol Parameter Value Unit
I
pp
I
TSM
dV/dt
T
T
stg
Tj
Note 1:
L
Peakpulse current:
10/1000µs (open circuitvoltagewaveform 10/1000µs)
8/20µs (opencircuitvoltage waveform4kV 1.2/50µs)
Nonrepetitivesurge peak on-statecurrent
Critical rateof riseof off-statevoltage
tp = 20ms
V
RM
100
250
55 A
Maximumlead temperaturefor solderingduring 10s 260 °C
Storagetemperaturerange
Maximumjunction temperature
Pulsewaveform
%I
PP
- 55to +150
150
5 KV/µs
A
A
°C
°C
µ
10 / 1000µstr=10µs tp = 1000
s
8/20µstr=8µstp=20µs
5 / 310µstr=5µs tp = 310µs
1/20µstr=1µstp=20µs
2/10µstr=2
µ
stp=10
µ
s
100
50
0
t
rp
t
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