SGS Thomson Microelectronics SMP75-8 Datasheet
SMP75-8
FEATURES
Bidirectionalsurgearrestor.
Verylow stand-offvoltage : V
Highrepetitive surgecapability:
I
= 75A (10/1000µs).
PP
Verylow capacitance: C < 75pF
Low leakagecurrent :< 2 µA
DESCRIPTION
TheSMP75-8 isa very lowvoltagetransient surge
arrestor especially designed to protect sensitive
telecommunication equipment against lightning
strikesand othertransients.
MAINAPPLICATION
XDSLTRANSMISSIONEQUIPMENT
RM
=8V.
SMB
(JEDEC DO-214AA)
SCHEMATIC DIAGRAM
TRISIL
TM
BENEFITS
Protectionagainsthigh energysurges.
Very low breakover voltage : V
avoiding saturationof transformer.
No signal distortion thanks to very low capacitance.
COMPLIESWITHTHEFOLLOWINGSTANDAR DS:
- BELLCORETR-NWT
-000974: 10/1000µs1kV
10/1000µs 75A*
- CCITT K20: 10/700µs4kV
5/310µs 100A
- VDE 0433: 10/700µs4kV
5/310µs 100A
- VDE 0878: 1.2/50 µs4kV
1/20 µs 100A
* with series resistor or PTC.
< 15 V, thus
BO
January 1998- Ed : 2
1/6
SMP75-8
ABSOLUTE MAXIMUMRATINGS (T
amb
=
25°C)
Symbol Parameter Value Unit
I
I
TSM
T
T
Tj
pp
stg
Peak pulsecurrent 10/1000µs
8/20µs
Non repetitivesurge peakon-state current
One cycle
Non repetitivesurge peakon-state current
F = 50Hz
Maximumlead temperaturefor solderingduring 10s 260 °C
I
Storagetemperaturerange
50Hz
60Hz
0.2s
2s
- 55 to+ 150
Maximumjunction temperature
75
250
35
37
14
6
150
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th(j-I)
th(j-a)
Junctionto leads 20 °C/W
Junctionto ambient onprinted circuit
100 °C/W
(withstandardfootprint dimensions)
Note 1:
Pulsewaveform
%I
PP
A
A
A
A
A
A
°C
°C
10 /1000µstr=10µs tp = 1000
8/20µstr=8µstp=20µs
5 / 310µstr=5µs tp = 310µs
1/20µstr=1µstp=20µs
2/10µstr=2
µ
stp=10
ELECTRICALCHARACTERISTICS(T
Symbol Parameter
V
RM
I
RM
V
R
V
BR
V
BO
I
H
I
BO
I
PP
Stand-offvoltage
Leakagecurrent atstand-offvoltage
ContinuousReversevoltage
Breakdownvoltage
Breakovervoltage
Holdingcurrent
Breakovercurrent
Peak pulsecurrent
C Capacitance
amb
µ
s
µ
s
=25°C)
100
50
0
t
rp
t
2/6
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