SGS Thomson Microelectronics SMLVT3V3 Datasheet
®
SMLVT3V3
FEATURES
UNIDIRECTIONAL TRANSIL DIODE
■
PEAK PULSE POWER : 600 W (10/1000µs)
■
REVERSE STAND-OFF VOLTAGE = 3.3 V
■
LOW CLAMPING FACTOR
■
FAST RESPONSE TIME
■
UL RECOGNIZED
■
DESCRIPTION
The SMLVT3V3 is a Transil diode designed
specifically for protecting 3.3V supplied sensitive
equipment against transient overvoltages.
Transil diodes provide high overvoltage protection
by clamping action. Their instantaneous response
to transient overvoltages makes then particularly
suited to protect voltage sensitive devices surb as
MOS technology and low voltage supply IC’s.
LOW VOLTAGE TRANSIL
SMB
(JEDEC DO-214AA)
TM
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25°C)
Symbol Parameter Value Unit
P
PP
P
I
FSM
T
stg
T
j
T
L
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.
Peak pulse power dissipation (see note 1) Tj initial = T
Power dissipation on infinite heatsink T
amb
= 75°C
Non repetitive surge peak forward current tp=10ms
Tj initial = T
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10 s
amb
amb
600 W
5W
50 A
-65to+175
175
260 °C
THERMAL RESISTANCE
Symbol Parameter Value Unit
R
R
th (j-l)
th (j-a)
Junction to leads
Junction to ambient on printed circuit on recommended pad
20 °C/W
100 °C/W
layout
°C
°C
August 2001 - Ed : 2
1/4
SMLVT3V3
ELECTRICAL CHARACTERISTICS (T
Symbol Parameter
V
V
V
I
I
αT
RM
BR
RM
PP
V
CL
F
Stand-off voltage.
Breakdown voltage.
Clamping voltage.
Leakage current @ VRM.
Peak pulse current.
Voltage temperature coefficient
Forward voltage drop
I
RM
@V
RM
VBR@I
max min max max max max
Type
AVVmAVAVA10
= 25°C)
amb
I
I
F
VV
CLVBR
R
VCL@I
PP
V
RM
VCL@I
I
I
PP
RM
PP
V
F
αTC
V
note 2 10/1000 µs 8/20 µs note 3 note 4
-4
/°C pF
SMLVT3V3 200 3.3 4.1 1 7.3 50 10.3 200 -5.3 5200
Fig. 1 : Peak pulse power dissipation versus initial
junction temperature (printed circuit board).
P [Tj initial]
PP
P [Tj initial = 25°C]PP
%I
PP
100
50
0
Note 2 : Pulse test : tp<50ms
Note 3 : ∆VBR= αT*(T
Note 4 : VR= 0V,F=1MHz.
10 µS
PLU SE WAVEFORM 10/1000 µS
1000 µS
amb
- 25)*VBR(25°C).
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
T
0.1
0.0
0 25 50 75 100 125 150 175 200
Tj initial (°C)
2/4
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