SGS Thomson Microelectronics SMDB3 Datasheet
®
FEATURES
VBO: 32V and 40V
■
LOW BREAKOVER CURRENT
■
DESCRIPTION
Functioning as a trigger diode with a fixed voltage
reference, the DB3/DB4 series can be used in
conjunction with triacs for simplified gate control
circuits or as a starting element in fluorenscent
lamp ballasts.
A new surface mount version is now available in
SOT-23 package, providing reduced space and
compatibility with automatic pick and place
equipment.
DB3 DB4 SMDB3
DIAC
DO-35
(DB3 and DB4)
2
SOT-23
(SMDB3)*
Pin 1 and 3 must be shorted
together
3
1
ABSOLUTE MAXIMUM RATINGS (limiting values)
Symbol Parameter Value Unit
I
TRM
Repetitive peak on-state current
SMDB3
1.00 A
tp=20µs F= 120 Hz
Tstg
Tj
Note: *SMDB3indicated as Preliminary spec as product is still in development stage.
October 2001 - Ed: 2B
Storage temperature range
Operating junction temperature range
DB3 / DB4
2.00
-40to+125 °C
1/5
DB3 DB4 SMDB3
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)
Symbol Parameter Test Conditions SMDB3 DB3 DB4 Unit
V
BO
IV
BO1-VBO2
∆ V Dynamic breakover
V
O
I
BO
tr Risetime * seediagram 3 MAX. 0.50 2 µs
I
R
I
P
* Applicable to both forward and reverse directions.
** Connected in parallel to the device.
PRODUCT SELECTOR
Breakover voltage * C = 22nF ** MIN. 28 28 35 V
I Breakover voltage
symmetry
voltage *
Output voltage * see diagram 2
Breakover current * C = 22nF ** MAX. 10 50 µA
Leakage current * VR= 0.5 VBOmax MAX. 1 10 µA
Peak current * see diagram 2 (Gate) MIN. 1 0.30 A
TYP. 32 32 40
MAX. 36 36 45
C = 22nF ** MAX. 3 V
and VFat 10mA MIN. 10 5 V
V
BO
MIN. 10 5 V
(R=20Ω)
Part Number V
SMDB3
DB3
DB4
ORDERING INFORMATION
Surface
Mount
Version
BO
28 - 36 SOT-23
28 - 36 DO-35
35 - 45 DO-35
SM DB 3
Diac Series
Package
Breakover voltage
BO
3:V typ = 32V
BO
4:V typ = 40V
2/5
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