SGS Thomson Microelectronics SMDB3 Datasheet

®
FEATURES
VBO: 32V and 40V
LOW BREAKOVER CURRENT
DESCRIPTION
Functioning as a trigger diode with a fixed voltage reference, the DB3/DB4 series can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fluorenscent lamp ballasts.
A new surface mount version is now available in SOT-23 package, providing reduced space and compatibility with automatic pick and place equipment.
DB3 DB4 SMDB3
DIAC
DO-35
(DB3 and DB4)
2
SOT-23
(SMDB3)*
Pin 1 and 3 must be shorted
together
3
1
ABSOLUTE MAXIMUM RATINGS (limiting values)
Symbol Parameter Value Unit
I
TRM
Repetitive peak on-state current
SMDB3
1.00 A
tp=20µs F= 120 Hz
Tstg
Tj
Note: *SMDB3indicated as Preliminary spec as product is still in development stage.
October 2001 - Ed: 2B
Storage temperature range Operating junction temperature range
DB3 / DB4
2.00
-40to+125 °C
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DB3 DB4 SMDB3
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)
Symbol Parameter Test Conditions SMDB3 DB3 DB4 Unit
BO
IV
BO1-VBO2
V Dynamic breakover
O
I
BO
tr Risetime * seediagram 3 MAX. 0.50 2 µs
I
R
I
P
* Applicable to both forward and reverse directions. ** Connected in parallel to the device.
PRODUCT SELECTOR
Breakover voltage * C = 22nF ** MIN. 28 28 35 V
I Breakover voltage
symmetry
voltage * Output voltage * see diagram 2
Breakover current * C = 22nF ** MAX. 10 50 µA
Leakage current * VR= 0.5 VBOmax MAX. 1 10 µA Peak current * see diagram 2 (Gate) MIN. 1 0.30 A
TYP. 32 32 40
MAX. 36 36 45
C = 22nF ** MAX. 3 V
and VFat 10mA MIN. 10 5 V
BO
MIN. 10 5 V
(R=20)
Part Number V
SMDB3 DB3 DB4
ORDERING INFORMATION
Surface Mount Version
BO
28 - 36 SOT-23 28 - 36 DO-35 35 - 45 DO-35
SM DB 3
Diac Series
Package
Breakover voltage
BO
3:V typ = 32V
BO
4:V typ = 40V
2/5
DB3 DB4 SMDB3
OTHER INFORMATION
Part Number Marking Weight Base Quantity Packing Mode
SMDB3 DB3 DB3 DB3 (Blue Body Coat) DB4 DB4 (Blue Body Coat)
Diagram 1: Voltage - current characteristic curve.
+I
F
10mA
I
BO
-V +V
I
B
0,5 V
BO
V
V
F
V
BO
0.01 g 3000 Tape & Reel
0.15 g 5000 Tape & Reel
0.15 g 5000 Tape & Reel
Diagram 2: Test circuit.
D.U.T
Vo
Rs=0
R=20
I
P
220V 50 Hz
500 k10 k
C=0.1µF
Diagram 3: Rise time measurement.
l
p
90 %
T410
-I
F
10 %
t
r
3/5
DB3 DB4 SMDB3
Fig. 1: Relative variation of VBO versus junction
temperature (typical values).
VBO [Tj] /VBO [Tj=25°C]
1.10
1.05
DB3/DB4
1.00
0.95
SMDB3
0.90
0.85
Tj(°C)
0.80 25 50 75 100 125
Fig. 3: Time duration while current pulse is higher 50mA versus C and Rs (typical values).
tp(µs)
40
Tj=25°C
35 30 25
33
20 15 10
5 0
10 20 50 100 200 500
0
47
10
68
22
C(nF)
Fig. 2: Repetitive peak pulse current versus pulse
duration (maximum values).
ITRM(A)
20.0
10.0
DB3/DB4
1.0
SMDB3
tp(µs)
0.1 1 10 100
F=120Hz
Tj initial=25°C
PACKAGE MECHANICAL DATA (in millimeters) DO-35
4/5
CA
O
/
D
C
O
/
D
REF. DIMENSIONS
BO
/
Millimeters Inches
Min. Max. Min. Max.
A 3.05 4.50 0.120 0.177 B 1.53 2.00 0.060 0.079 C 28.00 1.102 D 0.458 0.558 0.018 0.022
PACKAGE MECHANICAL DATA (in millimeters) SOT-23
DB3 DB4 SMDB3
B
FOOTPRINT
0.9
0.035
E
A
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
e
e1
D
A 0.89 1.4 0.035 0.055
A1 0 0.1 0 0.004
B 0.3 0.51 0.012 0.02
S
A1
c 0.085 0.18 0.003 0.007
D 2.75 3.04 0.108 0.12
L
e 0.85 1.05 0.033 0.041
e1 1.7 2.1 0.067 0.083
H
E 1.2 1.6 0.047 0.063 H 2.1 2.75 0.083 0.108
c
L 0.6 typ. 0.024 typ.
S 0.35 0.65 0.014 0.026
0.9
0.035
1.1
0.043
1.9
2.35
0.92
Informationfurnished is believedto be accurateandreliable. However, STMicroelectronicsassumes no responsibilityforthe consequences of useof such informationnor for anyinfringement of patentsor other rightsof third partieswhichmay result fromits use. Nolicense is grantedby implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap­proval of STMicroelectronics.
1.45
0.037
0.075
0.9
0.035
mm inch
1.1
0.043
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