SGS Thomson Microelectronics SM6T220CA, SM6T22A, SM6T22CA, SM6T24A, SM6T24CA Datasheet
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SM6 T 6V 8A/220A
FEATURES
PEAK PULSEPOWER: 600W (10/1000µs)
BREAKDOWNVOLTAGERANGE:
From6.8V to 220V.
UNI ANDBIDIRECTIONALTYPES
LOW CLAMPINGFACTOR
FASTRESPONSETIME
UL RECOGNIZED
DESCRIPTION
Transildiodes provide high overvoltageprotection
by clamping action. Their instantaneousresponse
to transientovervoltagesmakes them particularly
suited to protect voltage sensitive devices such
as MOS Technology and low voltage supplied
IC’s.
SM 6T 6V8CA / 220CA
TRANSIL
SMB
(JEDECD0-214AA)
TM
ABSOLUTE MAXIMUM RATINGS (T
amb
=25°C)
Symbol Parameter Value Unit
P
PP
P Powerdissipationon infiniteheatsink T
I
FSM
T
stg
T
j
T
L
Note 1 : Fora surge greater than themaximum values,the diode will fail in short-circuit.
Peak pulsepower dissipation(see note 1) Tjinitial = T
50°C5W
amb =
Non repetitivesurge peakforward
currentfor unidirectionaltypes
tp= 10ms
Tjinitial = T
Storagetemperaturerange
Maximumjunction temperature
Maximumlead temperaturefor solderingduring 10 s.
amb
amb
600 W
100 A
- 65 to + 175
150
260 °C
THERMALRESISTANCES
Symbol Parameter Value Unit
R
R
th (j-l)
th (j-a)
Junctionto leads 20 °C/W
Junctionto ambienton printedcircuit on recommendedpad
100 °C/W
layout
°C
°C
April 1998 Ed: 4
1/5
SM6Txx
ELECTRICALCHARACTERISTICS
Symbol Parameter
(T
amb
=25°C)
I
I
F
V
RM
V
BR
V
CL
I
RM
I
PP
α
T Voltagetemperaturecoefficient
V
F
Uni
Stand-offvoltage
Breakdownvoltage
Clampingvoltage
Leakagecurrent @ VRM
Peak pulsecurrent
Forwardvoltagedrop
I
Types
RM@VRM
max min nom max max max max typ
µ
VV
CLVBR
I
RM
I
PP
VCL@I
V
F
PP
V
RM
VBR@IRVCL@I
PP
note2 10/1000µs 8/20µs note3 note4
A V V V V mA V A V A 10
V
TC
α
-4
/°CpF
directional *Bidirectional *
SM6T6V8A DE SM6T6V8CA LE 1000 5.8 6.45 6.8 7.14 10 10.5 57 13.4 298 5.7 4000
SM6T7V5A DG SM6T7V5CA LG 500 6.4 7.13 7.5 7.88 10 11.3 53 14.5 276 6.1 3700
SM6T10A DP SM6T10CA LP 10 8.55 9.5 10 10.5 1 14.5 41 18.6 215 7.3 2800
SM6T12A DT SM6T12CA LT 5 10.2 11.4 12 12.6 1 16.7 36 21.7 184 7.8 2300
SM6T15A DX SM6T15CA LX 1 12.8 14.3 15 15.8 1 21.2 28 27.2 147 8.4 1900
SM6T18A EE SM6T18CA ME 1 15.3 17.1 18 18.9 1 25.2 24 32.5 123 8.8 1600
SM6T22A EK SM6T22CA MK 1 18.8 20.9 22 23.1 1 30.6 20 39.3 102 9.2 1350
SM6T24A EM SM6T24CA MM 1 20.5 22.8 24 25.2 1 33.2 18 42.8 93 9.4 1250
SM6T27A EP SM6T27CA MP 1 23.1 25.7 27 28.4 1 37.5 16 48.3 83 9.6 1150
SM6T30A ER SM6T30CA MR 1 25.6 28.5 30 31.5 1 41.5 14.5 53.5 75 9.7 1075
SM6T33A ET SM6T33CA MT 1 28.2 31.4 33 34.7 1 45.7 13.1 59.0 68 9.8 1000
SM6T36A EV SM6T36CA MV 1 30.8 34.2 36 37.8 1 49.9 12 64.3 62 9.9 950
SM6T39A EX SM6T39CA MX 1 33.3 37.1 39 41.0 1 53.9 11.1 69.7 57 10.0 900
SM6T68A FQ SM6T68CA NQ 1 58.1 64.6 68 71.4 1 92 6.5 121 33 10.4 625
SM6T100A FY SM6T100CA NY 1 85.5 95.0 100 105 1 137 4.4 178 22.5 10.6 500
SM6T150A GL SM6T150CA OL 1 128 143 150 158 1 207 2.9 265 15 10.8 400
SM6T200A GU SM6T200CA OU 1 171 190 200 210 1 274 2.2 353 11.3 10.8 350
SM6T220A GW SM6T220CA OW 1 188 209 220 231 1 328 2 388 10.3 10.8 330
%I
PP
100
50
0
Note 2 : Pulse test : tp<50ms.
Note 3 : ∆VBR=αT*(T
Note 4 : VR= 0 V, F = 1MHz. For bidirectionaltypes,
capacitancevalue is divided by 2.
10 s
PULSE WAVEFORM 10/1000 s
1000 s
- 25)*VBR(25°C).
amb
2/5
Fig.1:
Peakpulse powerdissipationversus initial
junctiontemperature(printedcircuitboard).
t
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