SGS Thomson Microelectronics SM6HT24A, SM6HT27A, SM6HT30A, SM6HT36A, SM6HT39A Datasheet
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HIGH TEMPERATURE TRANSIL
FOR AUTOMOTIVE APPLICATIONS
FEATURES
HIGH PERFORMANCE TRANSIL DESIGNED
TO FIT HIGH TEMPERATURE ENVIRONMENT
LIKE AUTOMOTIVE APPLICATIONS...
HIGH RELIABILITY P LANA R T ECH NOLO GY
HIGH PERFORMANCE IN VOLTAGE REGU-
LATION MODE
VERY LOW LEAKAGE CU RRENT
max = 5 µA @ Tamb = 150° C)
(I
R
PEAK PULSE POW ER : 600 W (10/1000µs)
FAST RESPONSE TIME
UNIDIRECTIONAL TYPE
LOW CLAMPING FACTOR
DESCRIPTION
This high performance Transil series has been designed to fit high temperature environment such as
automotive applications, using surface mount
technology. These devices are using high reliability
planar technology resulting in high performances
in voltage regulation mode and low leakage current at high temperature.
SM6HTxxA
TM
SMB
(JEDEC D0-214AA)
ABSOL UTE M AXIMU M RA TIN GS (T
amb
= 25°C)
Symbol Parameter Value Unit
P
PP
Peak pulse power dissipation (see note 1) Tj initial = T
P Power dissipation on infinite heatsink T
I
FSM
Non repetitive surge peak forward
current for unidirectional types
T
stg, TJ
T
L
Note 1
: For a surge greater than the maximum valu es, the diode wil l fail in short-ci rcuit.
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s.
tp = 10ms
Tj initial = T
amb
50°C5W
amb =
amb
600 W
75 A
- 65 to 175 °C
260 °C
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th (j-l)
th (j-a)
Junction to leads
Junction to ambient on printed circuit.
20 °C/W
100 °C/W
On recommended pad layout
April 1999 Ed: 4A
1/5
SM6HTxxA
ELECTRICAL CHARACTERISTICS
(T
= 25°C unless otherwise specified)
amb
Symbol Parameter
V
RM
V
BR
V
CL
I
RM
I
PP
V
F
Types Marking IRM @ V
SM6HT24A
SM6HT27A
SM6HT30A
SM6HT36A
SM6HT39A
SM6HT43A
Note 2 :
Pulse test : tp < 50 ms
Note 3 :
∆VBR = αT x (Tamb - 25) x VBR (25°C)
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current @ V
Peak pulse current
Forward voltage drop
< 3.5V @ IF = 50A
V
F
(pulse test: tp ≤ 500µs)
Tamb=25°C Tamb=150°C note2 10/1000µsmax
max max min nom max max note 3
A
µ
EMB 2 5 20.5 22.8 24 25.2 1 33.2 18.0 9.4
EPB 2 5 23.1 25.7 27 28.4 1 37.5 16.0 9.6
ERB 2 5 25.6 28.5 30 31.5 1 41.5 14.5 9.7
EVB 2 5 30.8 34.2 36 37.8 1 49.9 12.0 9.9
EXB 2 5 33.3 37.1 39 41.0 1 53.9 11.1 10.0
EYB 2 5 36.8 40.9 43 45.2 1 59.3 10.1 10.1
I
I
F
VV
CLVBR
V
RM
RM
RM
A VVVVmAVA10
µ
VBR @ I
R
I
I
RM
PP
V
F
VCL @ I
PP
V
T
α
-4
/°C
2/5
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