SGS Thomson Microelectronics SM4T33CA, SM4T36A, SM4T36CA, SM4T39A, SM4T39CA Datasheet

November 1992

SM4T6V8,A /220,A

SM4T6V8C, CA/220C,C A

TRANSI L

.PEAK PULS E POWER= 400 W @ 1ms.

.BREAKDOWN V OLT AGE RANGE :

From 6V8 to 220 V.

.UNI AND BIDIRECTIONAL TYPES.

.LOW CLAMPING FACTOR.

.FAST RESPONSE TIME:

T

clamping

: 1ps (0 V to VBR).

.JEDEC REGISTRED.

FEATURES

SOD 6

(Plastic)

Symbol Parameter Value Unit

P

p

Peak pulse power dissipation See note 1 and derating curve Fig 1.

Tamb = 25°C 400 W

P Power dissipation on infinite heatsink

See note 1 and derating curve Fig 1.

Tlead = 50°C5 W

I

FSM

Non repetitive surge peak forward current. For unidirectional types.

Tamb = 25°C

t =10 ms

50 A

T

stg T

j

Storage and junction temperature range - 65 to + 175

150

°C °C

T

L

Maximum lead temperature for soldering during 10 s.

260 °C

ABSOLUTE RATINGS (limiting values)

DESCRIPTION

Transil diodes provide high overvoltage protection by clamping action. Their instantaneous reponse to transients makes them praticularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC’s.

MECHANICAL CHARACTERISTICS

.Body marked with : Logo, Date Code, Type

Code and Cathode Band (for unidirectional types only).

.Full compatibility with both gluing and paste

soldering technologies.

.Excellent on board stability.

.Tinned copper leads.

.High temperature resistant resin.

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ELECTRICAL CHARACTERISTICS

I

F

V

F

VV

CLVBR

V

RM

I

PP

I

RM

V

Symbol Parameter

V

RM

Stand-off voltage.

V

BR

Breakdown voltage.

V

CL

Clamping voltage.

I

RM

Leakage current @ VRM.

I

PP

Surge current.

αT

Voltage temperature coefficient.

V

F

Forward Voltage drop VF < 3.5V @ IF = 25 A.

Symbol Parameter Value Unit

Rth (j-l) Junction-leads on infinite heatsink 20 °C/W

Rth (j-a) Junction to ambiant. on printed circuit.

With standard footprint dimensions.

100 °C/W

THERMAL RESISTANCES

TYPES

IRM @ V

RM

VBR @ IRVCL @ IPPVCL @ I

PP

αTC

max min nom max max max max typ

note2 10/1000µs8/20µs note3 note4

Uni

directional *Bidirectional *

µA VVVVmAVAVA10-4/°C(PF)

SM4T6V8 SM4T6V8A SM4T7V5 SM4T7V5A SM4T10 SM4T10A SM4T12 SM4T12A SM4T15 SM4T15A SM4T18 SM4T18A SM4T22 SM4T22A SM4T24 SM4T24A SM4T27 SM4T27A SM4T30 SM4T30A SM4T33 SM4T33A SM4T36 SM4T36A SM4T39 SM4T39

QD QE QF QG QN QP QS QT QW QX RD RE RH RK RL RM RN RP RQ RR RS RT RU RV RW RX

SM4T6V8C SM4T6V8CA SM4T7V5C SM4T7V5CA SM4T10C SM4T10CA SM4T12C SM4T12CA SM4T15C SM4T15CA SM4T18C SM4T18CA SM4T22C SM4T22CA SM4T24C SM4T24CA SM4T27C SM4T27CA SM4T30C SM4T30C4 SM4T33C SM4T33CA SM4T36C SM4T36CA SM4T39C SM4T39

VD VE VF VG VN VP VS VT VW VX UD UE UH UK UL UM UN UP UQ UR US UT UU UV UW UX

1000 1000

500 500

10 10

5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5

5.8

6.4

8.55

10.2

12.8

15.3

18.8

20.5

23.1

25.6

28.2

30.8

33.3

6.45

7.13

9.5

11.4

14.3

17.1

20.9

22.8

25.7

28.5

31.4

34.2

37.1

6.8

7.5

7.5 10 10 12 12 15 15 18 18 22 22 24 24 27 27 30 30 33 33 36 36 39 39

7.48

7.14

8.25

7.88 11

10.5

13.2

12.6

16.5

15.8

19.8

18.9

24.2

23.1

26.4

25.2

29.7

28.4 33

31.5

36.3

34.7

39.6

37.8

42.9

41.0

10 10 10 10

1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1

10.5

11.3

14.5

16.7

21.2

25.2

30.6

33.2

37.5

41.5

45.7

49.9

53.9

38 38

35.4

27.6

27.6 24 24 19 19 16 16 13 13 12 12

10.7

9.6

8.8

8.8 8 8

7.4

13.4

14.5

18.6

21.7

27.2

32.5

39.3

42.8

48.3

53.5

59.0

64.3

69.7

174 174 160 160 124 124 106 106

85 85 71 71 59 59 54 54 48 48 43 43 39 39 36 36 33 33

5.7

6.1

7.3

7.8

8.4

8.8

9.2

9.4

9.6

9.7

9.8

9.9

10.0

3500 3500 3100 3100 2000 2000 1550 1550 1200 1200

975 975 800 800 725 725 625 625 575 575 510 510 480 480 450 450

142

SM4Txx

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143

Note 1 :

Note 2 :

Note 3 : Note 4 :

For surges greater than the maximum values, the diod e wi ll pr e sen t a sh ort - c ircu it An od e - Ca th od e.

Pulse test: TP < 50 ms. ∆VBR = αT * (Ta - 25) * V

BR(25°C)

.

VR = 0 V, F = 1 MHz. For bidirectional types, capacit an c e va lue is divided by 2.

All parameters tested at 25 °C, except where indicated. * = Marking

0

0%

20

40

60

80

100%

%

20

40 60 80 100 120 140 160 180 200

Tamb (˚c)

Peak Power

(on printed circuit).

Average Power

(on infinite heatsink).

Figure 1: Power dissipation derating versus ambient temperature

10 s

1000 s

%I

PP

50

0

t

PULSE WAVEFORM 10/1000 s

100

TYPES IRM @ V

RM

VBR @ IRVCL @ IPPVCL @ I

PP

αTC

max min nom max max max max typ

note2 10/1000µs8/20µs note3 note4

Uni

directional *Bidirectional *

µA VVVVmAVAVA10-4/°C(PF)

SM4T68 SM4T68A SM4T100 SM4T100A SM4T150 SM4T150A SM4T200 SM4T200A SM4T220 SM4T220A

SN SP SW SX TH TK TS TT TU TV

SM4T68C SM4T68CA SM4T100C SM4T100CA SM4T150C SM4T150CA SM4T200C SM4T200CA SM4T220C SM4T220CA

WN WP WW WX XH XK XS XT XU XV

5 5 5 5 5 5 5 5 5 5

58.1

85.5

85.5 128 128 171 171 188 188

64.6

95.0

95.0 143 143 190 190 209 209

68

68 100 100 150 150 200 200 220 220

74.8

71.4 110 105 165 158 220 210 242 231

1 1 1 1 1 1 1 1 1 1

92

92 137 137 207 207 274 274 328 328

4.3

2.9

2.0

1.5

1.4

121 121 178 178 265 265 353 353 388 388

19 19 13 13

9 9

6.5

6.5 6 6

10.4

10.6

10.8

270 270 200 200 145 145 120 120 110 110

SM4Txx

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