SGS Thomson Microelectronics SM15T75A Datasheet
SM15T6V8A/220A
®
FEATURES
PEAK PULSE POWER : 1500 W (10/1000µs)
■
BREAKDOWN VOLTAGE RANGE :
■
From 6.8 V to 220 V
UNI AND BIDIRECTIONAL TYPES
■
LOW CLAMPING FACTOR
■
FAST RESPONSE TIME
■
UL RECOGNIZED
■
DESCRIPTION
Transil diodes provide high overvoltage protection
by clamping action. Their instantaneous
response to transient overvoltages makes them
particularly suited to protect voltage sensitive
devices such as MOS Technology and low
voltage supplied IC’s.
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25°C)
SM15T6V8CA/220CA
TRANSIL
SMC
TM
Symbol Parameter Value Unit
P
PP
P
I
FSM
T
stg
T
j
T
L
Note 1 :For a surge greater than the maximum values, the diode will fail in short-circuit.
Peak pulse power dissipation (see note1) Tj initial = T
Power dissipation on infinite heatsink T
Non repetitive surge peak forward
current for unidirectional types
= 50°C
amb
tp = 10ms
Tj initial = T
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10 s.
amb
amb
1500 W
6.5 W
200 A
-65to+175
150
260 °C
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th (j-l)
th (j-a)
Junction to leads
Junction to ambient on printed circuit on recommended pad
15 °C/W
75 °C/W
layout
°C
°C
September 2001 Ed : 3B
1/5
SM15Txx
ELECTRICAL CHARACTERISTICS
= 25°C)
(T
amb
Symbol Parameter
V
RM
V
BR
V
CL
I
RM
I
PP
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current @ V
Peak pulse current
RM
αT Voltage temperature coefficient
V
F
Uni
directional
SM15T6V8A MDE
SM15T7V5A MDG
SM15T10A MDP
SM15T12A MDT
SM15T15A MDX
SM15T18A MEE
SM15T22A MEK
SM15T24A MEM
SM15T27A MEP
SM15T30A MER
SM15T33A MET
SM15T36A MEV
SM15T39A MEX
SM15T68A MFP
SM15T75A MFO
SM15T100A MFX
SM15T150A MGK
SM15T200A MGV
SM15T220A MGX
Forward Voltage drop
Types
Mar-
kingBidirectional
SM15T6V8CA BDE
SM15T7V5CA BDG
SM15T10CA BDP
SM15T12CA BDT
SM15T15CA BDX
SM15T18CA BEE
SM15T22CA BEK
SM15T24CA BEM
SM15T27CA BEP
SM15T30CA BER
SM15T33CA BET
SM15T36CA BEV
SM15T39CA BEX
SM15T68CA BFP
SM15T75CA BFO
SM15T100CA BFX
SM15T150CA BGK
SM15T200CA BGV
SM15T220CA
Mar-
king
BGX 1 188 209 220 231 1 328 4.6 388 26 10.8 625
I
I
F
VVCLV
BR
I
RM@VRM
V
RM
VBR@IRVCL@IPPVCL@IPPαTC
I
I
RM
PP
V
F
V
max min nom max max max max typ
note2 10/1000µs 8/20µs note3 note4
µAVVVVmAVAVA10-4/°C pF
1000
5.8 6.45 6.8 7.14 10 10.5 143 13.4 746 5.7 9500
500
6.4 7.13 7.5 7.88 10 11.3 132 14.5 690 6.1 8500
10
8.55 9.5 10 10.5 1 14.5 103 18.6 538 7.3 7000
5
10.2 11.4 12 12.6 1 16.7 90 21.7 461 7.8 6000
1
12.8 14.3 15 15.8 1 21.2 71 27.2 368 8.4 5000
1
15.3 17.1 18 18.9 1 25.2 59.5 32.5 308 8.8 4300
1
18.8 20.9 22 23.1 1 30.6 49 39.3 254 9.2 3700
1
20.5 22.8 24 25.2 1 33.2 45 42.8 234 9.4 3500
1
23.1 25.7 27 28.4 1 37.5 40 48.3 207 9.6 3200
1
25.6 28.5 30 31.5 1 41.5 36 53.5 187 9.7 2900
1
28.2 31.4 33 34.7 1 45.7 33 59.0 169 9.8 2700
1
30.8 34.2 36 37.8 1 49.9 30 64.3 156 9.9 2500
1
33.3 37.1 39 41.0 1 53.9 28 69.7 143 10.0 2400
1
58.1 64.6 68 71.4 1 92 16.3 121 83 10.4 1550
1
64.1 71.3 - 78.8 1 103 14.6 134 75 10.5 1450
1
85.5 95.0 100 105 1 137 11 178 56 10.6 1150
1
128 143 150 158 1 207 7.2 265 38 10.8 850
1
171 190 200 210 1 274 5.5 353 28 10.8 675
%I
PP
100
50
0
Note 2 : Pulse test:tp<50ms.
Note 3 : ∆VBR= αT*(T
Note 4 : VR= 0 V, F=1 MHz. For bidirectional types,
capacitance value is divided by 2.
10 s
PULSE WAVEFORM 10/1000 s
1000 s
- 25)*VBR(25°C).
amb
2/5
Fig. 1: Peak pulse power dissipation versus initial
junction temperature (printed circuit board).
t
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